Field-effect gridistor-type transistor structure

Claim 2

A field-effect semiconductor structure of the gridistor type comprising a wafer of semiconductor material of a given type of conductivity having an upper and a lower surface and a first relatively high resistivity semiconductor layer and a second relatively low resistivity semiconductor layer, a drain electrode on said lower surface of the wafer, a gate of semiconductor material of the opposite type of conductivity, having its central region substantially embedded in the second semiconductor layer of the wafer, a plurality of conductive channels of said given type of conductivity perpendicular to and surrounded by said gate, said gate defining between itself and the upper surface of the wafer a third relatively high resistivity semiconductor layer of the said given type of conductivity, A frame and frame bars of the opposite type of conductivity, having their central region substantially embedded in the second semiconductor layer of the wafer and in ohmic contact with the gate, said frame surrounding the gate and said frame bars dividing the structure into compartments, a pit sunk in said third semiconductor layer and down to said frame, a source electrode on said upper surface and a gate electrode in the bottom of said pit and in ohmic contact with said frame.

Claim 3

A field-effect semiconductor structure of the gridistor type comprising a wafer of semiconductor material of a given type of conductivity having an upper and a lower surface and a first relatively high resistivity semiconductor layer and a second relatively low resistivity semiconductor layer, a drain electrode on said lower surface of the wafer, a gate of semiconductor material of the opposite type of conductivity, having its central region substantially embedded in the second semiconductor layer of the wafer, a plurality of conductive channels of said given type of conductivity perpendicular to and surrounded by said gate, said gate defining between itself and the upper surfaces of the wafer a third relatively high resistivity semiconductor layer of the said given type of conductivity, a frame and frame bars of the opposite type of conductivity, having their central region substantially embedded in the second semiconductor layer of the wafer and in ohmic contact with the gate, said frame surrounding the gate and said frame bars dividing the structure into compartments, a pit sunk in said third semiconductor layer opposite and down to said frame and said frame bars, a source bottom of said pit and in ohmic contact with said frame and said frame bars.

Claim 4

A field-effect semiconductor structure of the gridistor type comprising a wafer of semiconductor material of a given type of conductivity having an upper and a lower surface and a first relatively high resistivity semiconductor layer and a second relatively low resistivity semiconductor layer, a drain electrode on said lower surface of the wafer, a gate of semiconductor material of the opposite type of conductivity, having its central region substantially embedded in the second semiconductor layer of the wafer, a plurality of conductive channels of said given type of conductivity perpendicular to and surrounded by said gate, said gate defining between itself and the upper surfaces of the wafer a third relatively high resistivity semiconductor layer of the said given type of conductivity, a frame and frame bars of the opposite type of conductivity, having their central region substantially embedded in the second semiconductor layer of the wafer and in ohmic contact with the gate, said frame surrounding the gate and said frame bars dividing the structure into compartments, a pit sunk in said third semiconductor layer opposite and down to said frame and said frame bars, a source bottom of said pit and in ohmic contact with said frame and said frame bars.

Claim 5

A field-effect semiconductor structure of the gridistor type comprising a wafer of semiconductor material of a given type of conductivity having an upper and a lower surface and a first relatively high resistivity semiconductor layer and a second relatively low resistivity semiconductor layer, a drain electrode on said lower surface of the wafer, a diffused gate of semiconductor material of the opposite type of conductivity, having its central region substantially embedded in the second semiconductor layer of the wafer, a plurality of conductive channels of said given type of conductivity perpendicular to and surrounded by said gate, a frame and frame bars of the opposite type of conductivity, having their central region substantially embedded in the second semiconductor layer of the wafer and in ohmic contact with the gate, said frame surrounding the gate and said frame bars dividing the structure into compartments, a third relatively high semiconductor layer of the said given type of conductivity epitaxially deposited on to said second relatively low resistivity semiconductor layer, a pit sunk in said third semiconductor layer opposite and down to said frame and said frame bars, a source electrode on said upper surface and a gate electrode in the bottom of said pit and in ohmic contact with said frame and said frame bars.

Claim 6

A field-effect semiconductor structure of the gridistor type comprising a wafer of semiconductor material of a given type of conductivity having an upper and a lower surface and a first relatively high resistivity semiconductor layer and a second relatively low resistivity semiconductor layer, a drain electrode on said lower surface of the wafer, a diffused gate of semiconductor material of the opposite type of conductivity, having its central region substantially embedded in the second semiconductor layer of the wafer, a plurality of conductive channels of said given type of conductivity perpendicular to and surrounded by said gate, a frame and frame bars of the opposite type of conductivity, having their central region substantially embedded in the second semiconductor layer of the wafer and in ohmic contact with the gate, said frame surrounding the gate and said frame bars dividing the structure into compartments, a third relatively high semiconductor layer of the said given type of conductivity epitaxially deposited on to said second relatively low resistivity semiconductor layer, a pit sunk in said third semiconductor layer opposite and down to said frame and said frame bars, a source electrode on said upper surface and a gate electrode in the bottom of said pit and in ohmic contact with said frame and said frame bars.

Claim 7

A field-effect semiconductor structure of the gridistor type comprising a wafer of semiconductor material of a given type of conductivity having an upper and a lower surface and a first relatively high resistivity semiconductor layer and a second relatively low resistivity semiconductor layer, a drain electrode on said lower surface of the wafer, an implanted gate of semiconductor material of the opposite type of conductivity having its central region substantially embedded in the second semiconductor layer of the wafer, a plurality of conductive channels of said given type of conductivity perpendicular to and surrounded by said gate, a frame and frame bars of the opposeite of the opposite type of conductivity, having their central region substantially embedded in the second semiconductor layer of the wafer and in ohmic contact with the gate, said frame surrounding the gate and said frame bars dividing the structure into cOmpartments, a third relatively high semiconductor layer of the said given type of conductivity epitaxially deposited on to said second relatively low resistivity semiconductor layer, a pit sunk in said third semiconductor layer opposite and down to said frame and said frame bars, a source electrode on said upper surface and a gate electrode in the bottom of said pit and in ohmic contact with said frame and said frame bars.

Claim 8

A field-effect semiconductor structure of the gridistor type comprising a wafer of semiconductor material of a given type of conductivity having an upper and a lower surface and a first relatively high resistivity semiconductor layer and a second relatively low resistivity semiconductor layer, a drain electrode on said lower surface of the wafer, an implanted gate of semiconductor material of the opposite type of conductivity having its central region substantially embedded in the second semiconductor layer of the wafer, a plurality of conductive channels of said given type of conductivity perpendicular to and surrounded by said gate, a frame and frame bars of the opposeite of the opposite type of conductivity, having their central region substantially embedded in the second semiconductor layer of the wafer and in ohmic contact with the gate, said frame surrounding the gate and said frame bars dividing the structure into cOmpartments, a third relatively high semiconductor layer of the said given type of conductivity epitaxially deposited on to said second relatively low resistivity semiconductor layer, a pit sunk in said third semiconductor layer opposite and down to said frame and said frame bars, a source electrode on said upper surface and a gate electrode in the bottom of said pit and in ohmic contact with said frame and said frame bars.