Integral grid and multichannel field effect devices

Claim 1

FIELD-EFFECT SEMICONDUCTOR DEVICE COMPRISING A SEMICONDUCTOR WAFER OF A GIVEN TYPE OF CONDUCTIVITY, A SURFACE LAYER OF THE OPPOSITE TYPE OF CONDUCTIVITY ON THE CENTRAL PART OF ONE OF THE FACES OF THE WAFER AND FORMING A PLANE JUNCTION THEREWITH, IN SAID SURACE LAYER A FIRST SOURCE REGION HAVING THE SHAPE OF AN ELONGATED STRIP AND A SECOND DRAIN REGION HAVING THE SHAPE OF AN ELONGATED STRIP PARALLEL WITH THE SOURCE STRIP REGION, AN INTERMEDIATE GATE REGION IN SAID SURFACE LAYER DELIMITED AND BOUNDED BY SAID SOURCE AND DRAIN REGIONS, IN SAID GATE REGION THIRD ELONGATED REGION FORMING THE GATE PROPER, EACH HAVING THE SAME TYPE OF CONDUCTIVITY AS THE WAFER AND SUBSTANTIALLY A SHAPE OF A HALF-CYLINDER, SAID THIRD REGIONS HAVING AXES PERPENDICULAR TO THE SOURCE AND DRAIN STRIP REGIONS, EXTENDING UP TO ONE ANOTHER BY THEIR EDGE PORTIONS AND TO THE PERIPHERAL PART OF SAID WAFER, IN SAID GATE REGION A FOURTH ELONGATED REGION FORMING A CONDUCTIVE CHANNEL HAVING THE OPPOSITE TYPE OF CONDUCTIVITY TO THAT OF THE WAFER, PARALLEL TO THE PLANE JUCTION AND CONTRIGUOUS THERETO AND HAVING A LAMINAR SHAPE WITH RIDGED PROJECTIONS EACH INCLUDED BETWEEN TWO ADJACENT HALF-CYLINDER SHAPED THIRD REGIONS.