Integral grid and multichannel field effect devices

Claim 1

A FIELD-EFFECT MULTICHANNEL SEMICONDUCTOR DEVICE COMPRISING: A SEMICONDUCTOR WAFER OF A GIVEN TYPE OF CONDUCTIVITY; A SURFACE LAYER OF THE OPPOSITE TYPE OF CONDUCTIVITY ON ONE OF THE FACES OF SAID WAFER AND FORMING A PLANE JUNCTION THEREWITH; PARALLEL SPACED-APART STRIPS OF SAID OPPOSITE TYPE CONDUCTIVITY IN SAID SURFACE LAYER FORMING, RESPECTIVELY A SOURCE AND A DRAIN INTERCONNECTED BY A PLURALITY OF PARALLEL CHANNELS OF SAID OPPOSITE TYPE OF CONDUCTIVITY LYING BETWEEN SAID STRIPS; AND ELONGATED INCLUSION OF SAID GIVEN CONDUCTIVITY TYPE EMBEDDING SAID CHANNELS AND FORMING A GATE JUNCTION THEREWITH, THE CHANNELS HAVING A CROSS SECTION IN THE SHAPE OF A TRIANGLE WITH A RECTILINEAR BASE ALONG SAID PLANE JUNCTION AND WITH TWO CONCAVE CURVILINEAR SIDES ALONG SAID INCLUSIONS, THE ALTITUDE OF THE TRIANGLE BEING SUBSTANTIALLY EQUAL TO ONE-HALF OF THE LENGHT OF SAID BASE; SAID INCLUSIONS BEING ADJACENT AND INTEGRAL WITH EACH OTHER AT THE FREE SURFACE OF SAID LAYER AND EXTENDING THERETHROUGH TO REACH ONTO SAID PLANE JUNCTION; WITH SAID CURVILINEAR SIDES OF SAID ELONGATED CHANNELS FORMING QUARTER-CYLINDRICAL BORDERS.