US3268374A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing a field-effect transistor
Assignee: Texas Instruments Inc
•
Filing: 1963-04-24
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Granted: 1966-08-23
•
Expires: 1983-04-24
Abstract
No abstract record available.
Inventors
- 👤 Robert E Anderson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 18:32
CPC Classifications
H; H10; H10D; H10D99/00; H10D30/00; H10D30/80; H10P; H10P32/00; Y; Y10; Y10S; Y10S148/00; Y10S148/031; Y10S148/039; Y10S148/053; Y10S148/145
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
36 words
A SEMICONDUCTOR DEVICE COMPRISING AN N-TY STRATE, AN EPITAXIALLY GROWN P-TYPE LAYER ON SAID SUBSTRATE, AND N-TYPE STRIPES IN SAID P-TYPE LAYER SEPARATED BY P-STRIPES, SAID P-STRIPES CONNECTING TWO DISTINCT REGIONS OF SAID EPITAXIAL P-TYPE LAYER.
Claim 2
Dependent Claim
36 words
A SEMICONDUCTOR DEVICE COMPRISING AN N-TY STRATE, AN EPITAXIALLY GROWN P-TYPE LAYER ON SAID SUBSTRATE, AND N-TYPE STRIPES IN SAID P-TYPE LAYER SEPARATED BY P-STRIPES, SAID P-STRIPES CONNECTING TWO DISTINCT REGIONS OF SAID EPITAXIAL P-TYPE LAYER.
References Cited (Backward Citations)
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US2692839A
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US2763581A
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US2936256A
Cited
US3033714A
Cited
US3059158A
Cited
US3025438A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-08-22 | 1970-02-21 | 1970-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-08-22 | 1974-02-21 | 1974-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-08-22 | 1978-02-21 | 1978-08-23 | $7700.00 | Window Closed / Lapsed |