US3033714A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Diode type semiconductor device
Assignee: Sony Corp
•
Filing: 1958-05-08
•
Granted: 1962-05-08
•
Expires: 1978-05-08
Abstract
No abstract record available.
Inventors
- 👤 Ezaki Reona
- 👤 Kurose Yuriko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 22:45
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/70; H10D10/00; H10D62/00; H10D62/10; H10D99/00; H10F; H10F30/00; H10F30/20; H10P; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S438/00; Y10S438/979
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
63 words
AN ELECTRONIC DEVICE INCLUDING A HIGHLY DOPED P-N JUNCTION FORMED BY ADJACENT PORTIONS OF SEMI-CONDUCTOR MATERIALS OPPOSITELY DOPED, ONE PORTION OF WHICH HAS AN IMPURITY CONCENTRATION OF 2X1018 TO 1020 PER CUBIC CENTIMETER AND THE OTHER OPPOSITELY DOPED PORTION OF WHICH HAS AN IMPURITY CONCENTRATION IN EXCESS OF 1019 PER CUBIC CENTIMERTER AND HAVING A JUNCTION WIDTH OF ABOUT 200 ANGSTROMS OR LESS.
Claim 2
Dependent Claim
63 words
AN ELECTRONIC DEVICE INCLUDING A HIGHLY DOPED P-N JUNCTION FORMED BY ADJACENT PORTIONS OF SEMI-CONDUCTOR MATERIALS OPPOSITELY DOPED, ONE PORTION OF WHICH HAS AN IMPURITY CONCENTRATION OF 2X1018 TO 1020 PER CUBIC CENTIMETER AND THE OTHER OPPOSITELY DOPED PORTION OF WHICH HAS AN IMPURITY CONCENTRATION IN EXCESS OF 1019 PER CUBIC CENTIMERTER AND HAVING A JUNCTION WIDTH OF ABOUT 200 ANGSTROMS OR LESS.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-05-07 | 1965-11-06 | 1966-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-05-07 | 1969-11-06 | 1970-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-05-07 | 1973-11-06 | 1974-05-08 | $7700.00 | Window Closed / Lapsed |