US2870052A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductive device and method for the fabrication thereof
Assignee: Lanteris Space LLC
•
Filing: 1956-05-18
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Granted: 1959-01-20
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Expires: 1976-05-18
Abstract
No abstract record available.
Inventors
- 👤 Albert D Rittmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 14:57
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00; H10P14/00; H10P14/40; H10P14/46; H10P14/47
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
40 words
AS THE EMITTER REGION OF A SEMICONDUCTIVE DEVICE, A BODY OF SEMICONDUCTIVE MATERIAL HAVING A THICKNESS OF LESS THAN 0.01 MIL AND CONTAINING AN AVERAGE CONCENTRATION OF IONIZED ACTIVATOR IMPURITY ATOMS OF GREATER THAN ABOUT 1018 ATOMS PER CUBIC CENTIMETER.
Claim 2
Dependent Claim
40 words
AS THE EMITTER REGION OF A SEMICONDUCTIVE DEVICE, A BODY OF SEMICONDUCTIVE MATERIAL HAVING A THICKNESS OF LESS THAN 0.01 MIL AND CONTAINING AN AVERAGE CONCENTRATION OF IONIZED ACTIVATOR IMPURITY ATOMS OF GREATER THAN ABOUT 1018 ATOMS PER CUBIC CENTIMETER.
References Cited (Backward Citations)
US2709232A
Cited
US2750542A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1962-01-19 | 1962-07-21 | 1963-01-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1966-01-19 | 1966-07-21 | 1967-01-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1970-01-19 | 1970-07-21 | 1971-01-20 | $7700.00 | Window Closed / Lapsed |