US2890976A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monocrystalline tubular semiconductor
Assignee: Sprague Electric Co
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Filing: 1954-12-30
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Granted: 1959-06-16
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Expires: 1974-12-30
Abstract
No abstract record available.
Inventors
- 👤 Lehovec Kurt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 16:18
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0428; B; B01; B01J; B01J3/00; B01J3/04; B01J3/042; C; C30; C30B; C30B15/00; C30B29/00; C30B29/60; H10D; H10D62/00; H10D62/40; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/073; Y10T; Y10T428/00; Y10T428/13
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
73 words
A PROCESS FOR PRODUCING A MONOCRYSTALLINE TUBULAR SEMI-CONDUCTOR OF A MATERIAL OF THE CLASS CONSISTING OF SILICON AND GERMANIUM WHICH COMPRISES INSERTING A CORE OF AN INERT MATERIAL HAVING A THERMAL EXPANSION COEFFICIENT GREATER THAN THE SEMI-CONDUCTOR MATERIAL INTO A SEED CRYSTAL OF THE SEMI-CONDUCTOR MATERIAL, GROWING A CRYSTAL OF THE SEMI-CONDUCTOR MATERIAL ON THE CORE, AND SUBJECTING THE GROWN CRYSTAL AND CORE TO A LOW TEMPERATURE TO FACILITATE REMOVAL OF THE CORE.
References Cited (Backward Citations)
US1256930A
Cited
US1531784A
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US2142660A
Cited
US2703296A
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US2763581A
Cited
US2754455A
Cited
US2714183A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1962-06-15 | 1962-12-15 | 1963-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1966-06-15 | 1966-12-15 | 1967-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1970-06-15 | 1970-12-15 | 1971-06-16 | $7700.00 | Window Closed / Lapsed |