US5880485A
Expired / Lapsed
US
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Semiconductor device including Gallium nitride layer
Assignee: Mitsubishi Electric Corp
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Filing: 1997-09-11
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Granted: 1999-03-09
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Expires: 2017-09-11
Abstract
Abstract A high-quality gallium nitride layer is grown on a surface of a substrate which is exposed through a dielectric mask on the substrate. The high-quality gallium nitride layer has a composition expressed by the chemical formula: Ga.sub.x Al.sub.y In.sub.z N (I) wherein 0<x≦1, 0≦y<1, 0≦z<1, and x+y+z=1. An aluminum nitride thin layer is interposed between neighboring pairs of gallium nitride selectively grown layers and has a composition expressed by the following chemical formula: Al.sub.x Ga.sub.1-x N (II) wherein 0.7<x≦1.
Inventors
- 👤 Diethard Marx
- 👤 Zempei Kawazu
- 👤 Yutaka Mihashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:46
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; H01S5/10; H01S5/18; H01S5/183; H01S5/18308; H01S5/20; H01S5/22; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/0137; H01S2301/00; H01S2301/17; H01S2301/173; H01S2304/00; H01S2304/12; H01S5/02; H01S5/0206; H01S5/0213; H01S5/3202
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
106 words
A substrate laminated with a high-quality gallium nitride layer comprising: a substrate; a dielectric mask on the substrate and having a surface partially exposed at an opening; a plurality of gallium nitride selectively grown layers, each grown on a portion of the substrate encompassed by the opening, each said gallium nitride selectively grown layer having a composition expressed by the chemical formula: Ga.sub.x Al.sub.y In.sub.z N (I) wherein 0<x≦1, 0≦y<1, 0≦z<1, and x+Y+z=1; and an aluminum nitride thin layer interposed between pairs of neighboring gallium nitride selectively grown layers, said aluminum nitride layer having a composition expressed by the formula: Al.sub.x Ga.sub.1-x N (II) wherein 0.7<x≦1.
Claim 2
Dependent Claim
106 words
A substrate laminated with a high-quality gallium nitride layer comprising: a substrate; a dielectric mask on the substrate and having a surface partially exposed at an opening; a plurality of gallium nitride selectively grown layers, each grown on a portion of the substrate encompassed by the opening, each said gallium nitride selectively grown layer having a composition expressed by the chemical formula: Ga.sub.x Al.sub.y In.sub.z N (I) wherein 0<x≦1, 0≦y<1, 0≦z<1, and x+Y+z=1; and an aluminum nitride thin layer interposed between pairs of neighboring gallium nitride selectively grown layers, said aluminum nitride layer having a composition expressed by the formula: Al.sub.x Ga.sub.1-x N (II) wherein 0.7<x≦1.
Claim 3
Dependent Claim
28 words
The substrate as claimed in claim 1, further comprising a buffer layer and gallium nitride layer formed on the substrate prior to the formation of the dielectric mask.
Claim 4
Dependent Claim
23 words
The substrate as claimed in claim 1, wherein the aluminum nitride thin layer contacts the substrate or the gallium nitride layer contacts substrate.
Claim 5
Dependent Claim
26 words
A semiconductor device which comprises: the substrate as claimed in claim 1; a photoelectric semiconductor element, an electronic semiconductor element or an electro-optical integrated semiconductor element.
Claim 6
Dependent Claim
46 words
The semiconductor device as claimed in claim 4, wherein a photo electric semiconductor element comprises: a laser element region having successively deposited on the laminated substrate a stripe-shaped n-type gallium nitride clad layer, a stripe-shaped gallium nitride active layer and a p-type gallium nitride clad layer.
Claim 7
Dependent Claim
70 words
The semiconductor device as claimed in claim 4, wherein a photo electric semiconductor element comprises: a lower Bragg reflection layer structure formed on the laminated substrate; a n-type gallium nitride clad layer, gallium nitride active layer and p-type gallium nitride clad layer deposited successively on the lower Bragg reflection layer structure; a laser element region including an upper Bragg reflection layer structure formed over the p-type gallium nitride clad layer.
Claim 8
Dependent Claim
36 words
The semiconductor device as claimed in claim 6, wherein a laminated structure including the gallium nitride layer and the aluminum nitride thin layer on the laminated substrate concurrently serves as the lower Bragg reflection layer structure.
Claim 9
Dependent Claim
38 words
The semiconductor device as claimed in claim 4, wherein a photoelectric semiconductor element comprises: a detector element region having successively deposited on the laminated substrate a n-type gallium nitride clad layer and a p-type gallium nitride clad layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-08 | 2002-09-07 | 2003-03-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-08 | 2006-09-07 | 2007-03-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-08 | 2010-09-07 | 2011-03-09 | $7700.00 | Window Closed / Lapsed |