US5549747A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing sheets of crystalline material and devices made therefrom
Assignee: Massachusetts Institute of Technology
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Filing: 1994-04-14
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Granted: 1996-08-27
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Expires: 2014-04-14
Abstract
Abstract A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
Inventors
- 👤 Carl O. Bozler
- 👤 John C. C. Fan
- 👤 Robert W. McClelland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 06:14
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/142; C; C30; C30B; C30B25/00; C30B25/02; C30B25/04; C30B29/00; C30B29/60; C30B33/00; H10F19/00; H10F19/40; H10F71/00; H10F71/121; H10F71/127; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/276; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3418; H10P14/3421; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H01; H01S; H01S5/00; H01S5/02; H01S5/0206; H01S5/0207; H01S5/0217; H10P72/00; H10P72/70; H10P72/74; H10P72/7412; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S117/903; Y10S117/904; Y10S117/905; Y10S117/915; Y10S148/00; Y10S148/026; Y10S148/048; Y10S148/054; Y10S148/09; Y10S148/135; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
154 words
A process for forming an essentially single crystal region of a semiconductor material comprising: forming a non-single crystal region on a composite structure having an insulating mask formed over a substrate, the mask having an upper surface defining a plane above the substrate and having an opening to expose a surface portion of a single crystal material positioned below the plane of the insulating mask upper surface such that said non-single crystal region contacts the single crystal material surface portion below the plane of the mask upper surface; heating the non-single crystal region with a first heater positioned below the substrate and second heater positioned above the non-single crystal region to initiate growth of the essentially single crystal region at the exposed surface portion of the single crystal material; and propagating the growth of the essentially single crystal region such that the single crystal region overlies at least a portion of the insulating mask.
Claim 2
Dependent Claim
154 words
A process for forming an essentially single crystal region of a semiconductor material comprising: forming a non-single crystal region on a composite structure having an insulating mask formed over a substrate, the mask having an upper surface defining a plane above the substrate and having an opening to expose a surface portion of a single crystal material positioned below the plane of the insulating mask upper surface such that said non-single crystal region contacts the single crystal material surface portion below the plane of the mask upper surface; heating the non-single crystal region with a first heater positioned below the substrate and second heater positioned above the non-single crystal region to initiate growth of the essentially single crystal region at the exposed surface portion of the single crystal material; and propagating the growth of the essentially single crystal region such that the single crystal region overlies at least a portion of the insulating mask.
Claim 3
Dependent Claim
24 words
The process of forming an essentially single crystal region of a semiconductor material of claim 1 wherein the single crystal region comprises gallium arsenide.
Claim 4
Dependent Claim
35 words
The process of forming an essentially single crystal region of a semiconductor material of claim 1 wherein said heating step further comprises providing a second heater including a graphite strip heater to crystallize the region.
Claim 5
Dependent Claim
26 words
The process of forming an essentially single crystal region of a semiconductor of claim 1 further comprising separating the grown single crystal region from the substrate.
Claim 6
Independent Claim
138 words
A method of forming an essentially single crystal region of semiconductor material comprising: forming a substrate with a region of single crystal material exposed through an opening in an insulating layer that is positioned over the substrate such that the exposed region is positioned in a plane under the insulating layer; forming a non-single crystal region of semiconductor material over the insulating layer and in contact with the exposed single crystal region; heating the non-single crystal material with a first heater positioned below the substrate and a second heater above the semiconductor material to initiate growth of the essentially single crystal region at the exposed region of single crystal material; and propagating the growth of the essentially single crystal region such that the essentially single crystal region grows laterally over at least a portion of the insulating layer.
Claim 7
Independent Claim
138 words
A method of forming an essentially single crystal region of semiconductor material comprising: forming a substrate with a region of single crystal material exposed through an opening in an insulating layer that is positioned over the substrate such that the exposed region is positioned in a plane under the insulating layer; forming a non-single crystal region of semiconductor material over the insulating layer and in contact with the exposed single crystal region; heating the non-single crystal material with a first heater positioned below the substrate and a second heater above the semiconductor material to initiate growth of the essentially single crystal region at the exposed region of single crystal material; and propagating the growth of the essentially single crystal region such that the essentially single crystal region grows laterally over at least a portion of the insulating layer.
Claim 8
Dependent Claim
16 words
The method of claim 5 further comprising separating the essentially single crystal material from the substrate.
Claim 9
Dependent Claim
145 words
A process for forming an essentially single crystal region of semiconductor material comprising: forming a non-single crystal region over a substrate having an insulating layer formed over the substrate, the insulating layer exposing a single crystal material such that said non-single crystal region contacts the layer and the single crystal material in a plane underlying the insulating layer; providing a first heater below a substrate and a second heater above the non-single crystal region; heating the non-single crystal region with sufficient energy from the first heater and the second heater to initiate growth of an essentially single crystal region at the contact region between the non-single crystal region and the single crystal material; propagating the growth of the single crystal region such that the single crystal region overlies at least a portion of the insulating layer; and separating the single crystal region from the substrate.
Claim 10
Dependent Claim
145 words
A process for forming an essentially single crystal region of semiconductor material comprising: forming a non-single crystal region over a substrate having an insulating layer formed over the substrate, the insulating layer exposing a single crystal material such that said non-single crystal region contacts the layer and the single crystal material in a plane underlying the insulating layer; providing a first heater below a substrate and a second heater above the non-single crystal region; heating the non-single crystal region with sufficient energy from the first heater and the second heater to initiate growth of an essentially single crystal region at the contact region between the non-single crystal region and the single crystal material; propagating the growth of the single crystal region such that the single crystal region overlies at least a portion of the insulating layer; and separating the single crystal region from the substrate.
Claim 11
Dependent Claim
24 words
The process of forming an essentially single crystal region of a semiconductor material of claim 7 wherein the single crystal region comprises gallium arsenide.
Claim 12
Dependent Claim
23 words
The process of forming an essentially single crystal region of a semiconductor material of claim 7 wherein the single crystal region comprises silicon.
Claim 13
Dependent Claim
30 words
The process of forming an essentially single crystal region of semiconductor material of claim 7 wherein the separating step further comprises transferring the single crystal region of a second substrate.
Claim 14
Dependent Claim
25 words
The process of forming an essentially single crystal region of semiconductor material of claim 1 wherein the non-single crystal region comprises amorphous or polycrystalline silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-27 | 2000-02-26 | 2000-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-27 | 2004-02-26 | 2004-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-27 | 2008-02-26 | 2008-08-27 | $7700.00 | Window Closed / Lapsed |