US4444620A
Expired / Lapsed
US
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Growth of oriented single crystal semiconductor on insulator
Assignee: AT&T Inc
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Filing: 1983-09-12
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Granted: 1984-04-24
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Expires: 2003-09-12
Abstract
Abstract Improvements in the lateral recrystallization of semiconductor material on buried insulator are disclosed. In particular, in the zone-melting process applied to seeded Si, it is found that scanning the molten zone in a [110] direction can result in substantially subboundary-free recrystallized material. Furthermore, appropriate patterning of the capping layer, to provide means for accommodating the volume change attending solidification of the semiconductor material, can result in significant decrease of defect density in laterally recrystallized semiconductor material on insulator. Especially advantageous results are produced when combining the improvements.
Inventors
- 👤 Terrence Kovacs
- 👤 Loren N. Pfeiffer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:13
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
193 words
Method for producing a semiconductor device, the method comprising producing a body comprising a single crystal substrate consisting substantially of Si, the substrate having a major surface oriented substantially parallel to a (100) crystal plane of the substrate, the method comprising (a) forming an insulator first layer on at least a part of the major surface, (b) providing at least one major surface region that is not covered by the first layer, the region to be referred to as the "seed" region, (c) forming a second layer consisting substantially of Si on at least a part of the first layer and at least a part of the seed region, (d) forming a capping third layer on at least a part of the second layer, (e) heating the second layer to melt a part of the second layer, thereby producing at least one solid-liquid interface, and (f) causing the interface to move across at least part of the second layer, thereby causing solidification of second layer material at the interface, characterized in that (g) the interface is caused to move in a direction that is within about 10° of a [110] substrate crystal direction.
Claim 2
Dependent Claim
193 words
Method for producing a semiconductor device, the method comprising producing a body comprising a single crystal substrate consisting substantially of Si, the substrate having a major surface oriented substantially parallel to a (100) crystal plane of the substrate, the method comprising (a) forming an insulator first layer on at least a part of the major surface, (b) providing at least one major surface region that is not covered by the first layer, the region to be referred to as the "seed" region, (c) forming a second layer consisting substantially of Si on at least a part of the first layer and at least a part of the seed region, (d) forming a capping third layer on at least a part of the second layer, (e) heating the second layer to melt a part of the second layer, thereby producing at least one solid-liquid interface, and (f) causing the interface to move across at least part of the second layer, thereby causing solidification of second layer material at the interface, characterized in that (g) the interface is caused to move in a direction that is within about 10° of a [110] substrate crystal direction.
Claim 3
Dependent Claim
17 words
Method of claim 1, wherein the seed region is formed by subtractive patterning of the first layer.
Claim 4
Dependent Claim
14 words
Method of claim 1, wherein the first layer consists essentially of SiO 2 .
Claim 5
Dependent Claim
13 words
Method of claim 1, wherein the third layer comprises a SiO 2 layer.
Claim 6
Dependent Claim
22 words
Method of claim 1, wherein the second layer is heated by means comprising a strip heater spaced apart from the third layer.
Claim 7
Dependent Claim
50 words
Method of claim 1, wherein a first heater brings the substrate to a temperature slightly below the melting point of the second layer material and a second heater is translated, in spaced apart relation, across the third layer, thereby melting a zone of second layer material and translating the zone.
Claim 8
Dependent Claim
170 words
Method for producing a semiconductor device, the method comprising producing a body comprising a single crystal substrate consisting substantially of a first semiconductor material, the substrate having a major surface, the method comprising (a) forming an insulator first layer on at least a part of the major surface, (b) providing at least one major surface region that is not covered by the first layer, the region to be referred to as the "seed" region, (c) forming a second layer, consisting substantially of the first semiconductor material, on at least a part of the first layer and at least a part of the seed region, (d) forming a capping third layer on at least a part of the second layer, (e) heating the semiconductor second layer to melt at least a part of the second layer, and (f) solidifying the molten part of the second layer, characterized in that (g) the capping third layer is patterned, the pattern adapted for providing means for accommodating a volume change of the solidifying material.
Claim 9
Dependent Claim
170 words
Method for producing a semiconductor device, the method comprising producing a body comprising a single crystal substrate consisting substantially of a first semiconductor material, the substrate having a major surface, the method comprising (a) forming an insulator first layer on at least a part of the major surface, (b) providing at least one major surface region that is not covered by the first layer, the region to be referred to as the "seed" region, (c) forming a second layer, consisting substantially of the first semiconductor material, on at least a part of the first layer and at least a part of the seed region, (d) forming a capping third layer on at least a part of the second layer, (e) heating the semiconductor second layer to melt at least a part of the second layer, and (f) solidifying the molten part of the second layer, characterized in that (g) the capping third layer is patterned, the pattern adapted for providing means for accommodating a volume change of the solidifying material.
Claim 10
Dependent Claim
32 words
Method of claim 7, wherein the capping layer is patterned such that, on average, at least about 95% of the second layer area to be recrystallized is covered by capping layer material.
Claim 11
Dependent Claim
23 words
Method of claim 7, wherein the first semiconductor material is selected from the group consisting of Si, Ge, III-V semiconductors, and II-VI semiconductors.
Claim 12
Dependent Claim
33 words
Method of claim 8, wherein the first semiconductor material is Si, the first layer consists substantially of SiO 2 , and the third layer comprises a layer consisting substantially of SiO 2 .
Claim 13
Dependent Claim
23 words
Method of claim 10, wherein at least a major part of the second layer is melted substantially simultaneously by means comprising visible radiation.
Claim 14
Dependent Claim
26 words
Method of claim 1, wherein the capping third layer is patterned, the pattern adapted for providing means for accommodating a volume change of the solidifying material.
Claim 15
Dependent Claim
32 words
Method of claim 12, wherein the third layer is patterned such that, on average, at least about 95% of the second layer material to be recrystallized is covered by third layer material.
Claim 16
Dependent Claim
26 words
Method of claim 13, wherein the patterned third layer comprises strips oriented with their long dimension substantially parallel to the direction of motion of the interface.
Claim 17
Dependent Claim
20 words
Method of claim 13, wherein the patterned third layer comprises a multiplicity of isolated windows extending to the second layer.
Claim 18
Dependent Claim
23 words
Method of claim 1, wherein the semiconductor device is selected from the group consisting of electronic devices, integrated optics devices, and optoelectronic devices.
Claim 19
Dependent Claim
23 words
Method of claim 7, wherein the semiconductor device is selected from the group consisting of electronic devices, integrated optics devices, and optoelectronic devices.
Claim 20
Dependent Claim
23 words
Method of claim 12, wherein the semiconductor device is selected from the group consisting of electronic devices, integrated optics devices, and optoelectronic devices.
References Cited (Backward Citations)
US4323417A
Cited
US4371421A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-04-24 | 1987-10-24 | 1988-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-04-24 | 1991-10-24 | 1992-04-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-04-24 | 1995-10-24 | 1996-04-24 | $7700.00 | Window Closed / Lapsed |