Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To easily obtain a single crystal Si layer on an insulting film by a method wherein an aperture is provided on the insulating film on the single crystal Si substrate, a noncrystalline or polycrystalline Si layer is superposed and then a beam of light or a particle beam is scanned with the aperture section as the starting point. CONSTITUTION:The aperture 3 is provided on the SiO2 film 2 on the single crystal Si substrate 1 and the polycrystalline Si or noncrystalline Si 4 is laminaed. Then, a partial annealing is performed successively by irradiating a laser beam, an electron beam 6 and the like with the aperture 3 as the starting point. An excellent single crystal Si layer can be formed through these procedures. Also, when an aperture is selectively provided on the Si layers 5, island-type single crystal layers 5, which are reliably electric isolated through the intermediary of an insulating film, can be provided.

Inventors

• 👤 Atsuo Iida
• 👤 Hajime Kamioka
• 👤 Noriaki Sato

Bibliographic Details