US4461670A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing silicon devices
Assignee: Nokia Bell Labs
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Filing: 1982-05-03
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Granted: 1984-07-24
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Expires: 2002-05-03
Abstract
Abstract Dielectrically isolated regions of single crystal silicon are produced through the use of a specific melting process. In this process, a substrate having regions of single crystal silicon contacting regions of non-single crystal silicon that overlie a dielectric material are treated. In particular, the entire region(s) of non-single crystal silicon is melted utilizing primarily radiant energy. Cooling is then initiated and the molten silicon is converted into a region of single crystal material. Isolation is completed by removing the appropriate regions of single crystal silicon.
Inventors
- 👤 George K. Celler
- 👤 David J. Lischner
- 👤 McDonald Robinson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 12:24
CPC Classifications
C; C30; C30B; C30B19/00; H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P34/422; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/38; H10P14/3802; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1912; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S148/00; Y10S148/091; Y10S148/093
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
168 words
A process for producing an active region of single crystal silicon overlying a region of dielectric material comprising the steps of: (1) forming a precursor structure that includes a region of non-single crystal silicon material which both overlies said region of dielectric material and which is in proximity to a nucleating region of single crystal silicon and (2) converting said non-single crystal silicon region into said active region of single crystal silicon by employing said nucleating region of single crystal silicon as a nucleating site characterized in that said conversion is accomplished by entirely melting at least said region of non-single crystal silicon with heat at least 50 percent of which is provided from a radiant source to form a molten silicon region which contacts said nucleating region and allowing said molten silicon region to recrystallize while maintaining the surface of said molten region at a higher temperature than the temperature of the surface of said precursor structure furthest vertically removed from said surface of said molten region.
Claim 2
Dependent Claim
168 words
A process for producing an active region of single crystal silicon overlying a region of dielectric material comprising the steps of: (1) forming a precursor structure that includes a region of non-single crystal silicon material which both overlies said region of dielectric material and which is in proximity to a nucleating region of single crystal silicon and (2) converting said non-single crystal silicon region into said active region of single crystal silicon by employing said nucleating region of single crystal silicon as a nucleating site characterized in that said conversion is accomplished by entirely melting at least said region of non-single crystal silicon with heat at least 50 percent of which is provided from a radiant source to form a molten silicon region which contacts said nucleating region and allowing said molten silicon region to recrystallize while maintaining the surface of said molten region at a higher temperature than the temperature of the surface of said precursor structure furthest vertically removed from said surface of said molten region.
Claim 3
Dependent Claim
14 words
The process of claim 1 wherein said radiant source comprises a resistively heated lamp.
Claim 4
Dependent Claim
15 words
The process of claim 2 wherein said resistively heated lamp comprises a tungsten halogen lamp.
Claim 5
Dependent Claim
13 words
The process of claim 1 wherein said radiant source comprises an arc lamp.
Claim 6
Dependent Claim
14 words
The process of claim 1 wherein said region of dielectric material comprises silicon oxide.
Claim 7
Dependent Claim
16 words
The process of claim 1 wherein a capping layer overlies said region of non-single crystal silicon.
Claim 8
Dependent Claim
12 words
The process of claim 5 wherein said capping region comprises silicon oxide.
Claim 9
Dependent Claim
26 words
The process of claim 1 wherein a means is provided to substantially prevent energy from being reflected onto said furthest removed surface of said precursor body.
Claim 10
Dependent Claim
13 words
The process of claim 8 wherein said means comprises a blackened aluminum plate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-24 | 1988-01-23 | 1988-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-24 | 1992-01-23 | 1992-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-24 | 1996-01-23 | 1996-07-24 | $7700.00 | Window Closed / Lapsed |