Semiconductor substrate

Abstract

Abstract PURPOSE:To prevent evaporation of non-single crystal silicon and to obtain the excellent substrate in manufacturing the single crystal substrate by laser annealing by selecting a silicon oxide film so that the laser light reflected from the silicon oxide film becomes the minimum. CONSTITUTION:The single crystal is obtained from non-single crystal silicon 4, which is deposited on the entire surface of the silicon oxide film 5 having window part 3 on the single crystal silicon substrate 1, by the laser annealing method. In this case, the reflected light 6a of the laser light 6 at the surface of the silicon oxide film 5 and the reflected light 6b at the surface of the substrate 1 are made to be the mininum (transmitted light 6c is the minimum). For example, in the case of argon laser (wavelength is about 0.69mum), 4,150Angstrom , 5,800Angstrom , 6,600Angstrom , etc. are selected. In this constitution, heating within the silicon oxide film 5 due to the laser light 6 is eliminated, non-single crystal film 4 is not evaporated, and the excellent semiconductor substrate can be obtained. The thickness of the silicon oxide film 5 should be at least 4,000Angstrom -6,000Angstrom .

Inventors

• 👤 Junji Sakurai

Bibliographic Details