US5815520A
Expired / Lapsed
US
⏱️ 0.0 years remaining
light emitting semiconductor device and its manufacturing method
Assignee: NEC Corp
•
Filing: 1996-06-21
•
Granted: 1998-09-29
•
Expires: 2016-06-21
Abstract
Abstract The present invention discloses a highly bright short wavelength light emitting semiconductor device with high reliance having improved crystallinity and surface smoothness. The device comprises at least one layer of In x Ga y Al 1-x-y N (where, 0≦x≦1, 0≦x+y≦1) formed on a sapphire substrate or a Si substrate, wherein a ZnO buffer layer (2) which can lattice match In x Ga y Al 1-x-y N is formed on the substrate (1) and a manufacturing method thereof.
Inventors
- 👤 Yuji Furushima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 10:18
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
42 words
A light emitting semiconductor device comprising a sapphire substrate having a ZnO buffer layer formed on a surface of said sapphire substrate, and a layer of In x Ga y Al 1-x-y N (where, 0≦x≦1, 0≦x+y≦1) formed on said ZnO buffer layer.
Claim 2
Dependent Claim
42 words
A light emitting semiconductor device comprising a sapphire substrate having a ZnO buffer layer formed on a surface of said sapphire substrate, and a layer of In x Ga y Al 1-x-y N (where, 0≦x≦1, 0≦x+y≦1) formed on said ZnO buffer layer.
Claim 3
Dependent Claim
25 words
The light emitting semiconductor device according to claim 1 wherein said ZnO buffer layer is epitaxially formed on a (0001) surface of said sapphire substrate.
Claim 4
Dependent Claim
43 words
The light emitting semiconductor device according to claim 1, wherein an In x Ga y Al 1-x-y N (where, 0≦x≦1, 0≦x+y≦1) epitaxial buffer layer grown at a temperature less than or equal to 1000° C. is formed directly on said ZnO buffer layer.
Claim 5
Dependent Claim
51 words
The light emitting semiconductor device according to claim 1, wherein an In x Ga y Al 1-x-y N (where, 0≦x≦1, 0≦x+y≦1) epitaxial buffer layer is formed directly on said ZnO buffer layer, said In x Ga y Al 1-x-y N epitaxial buffer layer having a thickness of 5 to 200 nm.
Claim 6
Dependent Claim
44 words
The light emitting semiconductor device according to claim 1, wherein an In x Ga y Al 1-x-y N (where, 0≦x≦1, 0≦x+y≦1) epitaxial buffer layer is formed directly on said ZnO buffer layer, said ZnO buffer layer having a thickness of 10 to 500 nm.
Claim 7
Dependent Claim
63 words
A light emitting semiconductor device comprising a Si substrate having a (0001) ZnO buffer layer formed on a (111) surface of said Si substrate, and a layer of In x Ga y Al 1-x-y N (where, 0≦x≦1, 0≦x+y≦1) formed on said ZnO buffer layer, wherein said ZnO buffer layer is in lattice match with said In x Ga y Al 1-x-y N layer.
Claim 8
Dependent Claim
63 words
A light emitting semiconductor device comprising a Si substrate having a (0001) ZnO buffer layer formed on a (111) surface of said Si substrate, and a layer of In x Ga y Al 1-x-y N (where, 0≦x≦1, 0≦x+y≦1) formed on said ZnO buffer layer, wherein said ZnO buffer layer is in lattice match with said In x Ga y Al 1-x-y N layer.
Claim 9
Dependent Claim
43 words
The light emitting semiconductor device according to claim 6, wherein an In x Ga y Al 1-x-y N (where, 0≦x≦1, 0≦x+y≦1) epitaxial buffer layer grown at a temperature less than or equal to 1000° C. is formed directly on said ZnO buffer layer.
Claim 10
Dependent Claim
51 words
The light emitting semiconductor device according to claim 6, wherein an In x Ga y Al 1-x-y N (where, 0≦x≦1, 0≦x+y≦1) epitaxial buffer layer is formed directly on said ZnO buffer layer, said In x Ga y Al 1-x-y N epitaxial buffer layer having a thickness of 5 to 200 nm.
Claim 11
Dependent Claim
44 words
The light emitting semiconductor device according to claim 6, wherein an In x Ga y Al 1-x-y N (where, 0≦x≦1, 0≦x+y<1) epitaxial buffer layer is formed directly on said ZnO buffer layer, said ZnO buffer layer having a thickness of 10 to 500 nm.
References Cited (Backward Citations)
JPH02229476A
Cited
JPH04209577A
Cited
JPH04236478A
Cited
JPH04297023A
Cited
JPH05283744A
Cited
US5602418A
Cited
US5604763A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-28 | 2002-03-30 | 2002-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-28 | 2006-03-30 | 2006-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-28 | 2010-03-30 | 2010-09-29 | $7700.00 | Window Closed / Lapsed |