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EP0951055A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Epitaxial material grown laterally within a trench

Assignee: Agilent Technologies Inc
•
Filing: 1998-11-10
•
Granted: —
•
Expires: 2018-11-10
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Abstract

Abstract An epitaxial material (71, 72, 73...) grown laterally in a trench (60) allows for the fabrication of a trench-based semiconductor material that is substantially low in dislocation density. Initiating the growth from a sidewall (61) of a trench (60) minimizes the density of dislocations (54) present in the lattice growth template, which minimizes the dislocation density in the regrown material. Also, by allowing the regrowth to fill and overflow the trench (60), the low dislocation density material (71, 72, 73...) can cover the entire surface of the substrate (52) upon which the low dislocation density material is grown. Furthermore, with successive iterations of the trench growth procedure, higher quality material can be obtained. Devices that require a stable, high quality epitaxial material can then be fabricated from the low dislocation density material.

Inventors

  • 👤 Shih Yuan Wang
  • 👤 Yong Chen
  • 👤 Scott W. Corzine
  • 👤 Changhua Chen
  • 👤 R. Scott Kern
  • 👤 Richard P. Schneider Jr.

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-27 20:38
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/276; H10P14/271; H10P14/272; H10P14/29; H10P14/2901; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 43 words
A method for growing a low dislocation density material, comprising the steps of: forming a trench (60) in a substrate (52); and growing, in said trench (60), an epitaxial lateral growth layer (71), that originates from a wall (61) of said trench (60).
Claim 2
Dependent Claim 17 words
The method as defined in claim 1, wherein said substrate (52) includes a first epitaxial layer (70).
Claim 3
Dependent Claim 19 words
The method as defined in claim 1, wherein said epitaxial lateral growth layer (71) includes an active region (77).
Claim 4
Dependent Claim 19 words
The method as defined in claim 1, wherein said epitaxial lateral growth layer (71) is a gallium nitride material.
Claim 5
Dependent Claim 39 words
The method as defined in claim 1, further including the steps of: forming an additional trench (65) in said epitaxial lateral growth layer (71); and growing an additional epitaxial lateral growth layer (72, 73...) in said additional trench (65).
Claim 6
Dependent Claim 21 words
The method as defined in claim 5, wherein said additional trench (65) is formed at an angle to said trench (60).
Claim 7
Dependent Claim 46 words
A material system, comprising: a substrate (52); a trench (60) within said substrate (52); and an epitaxial lateral growth layer (71) having reduced dislocation density orthogonal to said substrate (52), said epitaxial lateral growth layer (71) extending from a side wall (61) of said trench (60).
Claim 8
Dependent Claim 17 words
The system as defined in claim 7, wherein said substrate (52) includes a first epitaxial layer (70).
Claim 9
Dependent Claim 34 words
The material as defined in claim 7, further comprising: an additional trench (65) in said epitaxial lateral growth layer (71); and an additional epitaxial lateral growth layer (72, 73...) in said additional trench (65).
Claim 10
Dependent Claim 20 words
The system as defined in claim 9, wherein said additional trench (65) is at an angle to said trench (60).

References Cited (Backward Citations)

EP0942459A1 Cited

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