US5397736A
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Liquid epitaxial process for producing three-dimensional semiconductor structures
Assignee: Max-Planck-Gesellschaft zur Förderung der Wissenschaften eV
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Filing: 1994-06-20
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Granted: 1995-03-14
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Expires: 2014-06-20
Abstract
Abstract By a liquid epitaxial process monocrystalline semiconductor layers are produced having a high degree of crystal perfection in a multi-layer arrangement on intermediate layers of an insulating material and/or carbone and/or metal, in order to produce three-dimensional semiconductor structures which offer low mechanical stresses and load-bearing densities of between 1014 and 1021 per cm3. Very low manufacturing temperatures can be used, for example between 300 DEG and 900 DEG C. The seeding for each epitaxial layer is performed in the openings of the intermediate layer where a monocrystalline material is located in a free state. From these openings, the lateral and monocrystalline growth of the intermediate layers takes place. The repeated application of the liquid epitaxial process described allows three-dimensional integration in monocrystalline multilayer structures which are extremely devoid of defects.
Inventors
- 👤 Elisabeth Bauser
- 👤 Horst Paul Strunk
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:39
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D88/00; H10D88/01; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/2926; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
286 words
A spin liquid-phase epitaxy process for manufacturing a multi-layer semi-conductive circuit structure having high structural perfection and low mechanical stresses, said circuit structure layers each having a circuit-active component and being separately connectable in a circuit, said process comprising the steps of: a) providing a semiconductor substrate for growth of an epitaxial layer of high structural perfection, said substrate having a surface, said surface being crystallographic oriented in such a fashion that, during crystal growth, crystal growth velocity is smaller perpendicularly to said surface as compared to crystal growth velocity parallel to said surface and having a masked pattern disposed on said surface and exposing areas of said surface, said mask pattern having mask pattern portions masking areas of said surface and narrow intermediate spaces between said mask portions, said intermediate spaces being narrower than said mask portions whereby said surface is exposed in said spaces to have an exposed area less than that of said masked areas; b) providing a liquid solution of a semiconductor material in a solvent; c) in a spin liquid-phase epitaxy growth step, causing said solution to flow over said substrate by means of centrifugal forces, to grow an epitaxial layer of said semiconductor material, with high structural perfection, on said exposed surfaces and laterally over said mask pattern, said mask pattern and epitaxial layer thereby forming a semiconductor circuit structure layer; d) repeating said steps a)-c) with said circuit structure layer formed by the first iteration of step c) employed as said substrate for a subsequent iteration of step a) until the desired number of circuit structure layers is formed; and e) providing each said circuit structure layer with contact means for individual connection of said layers in said circuit.
Claim 2
Dependent Claim
286 words
A spin liquid-phase epitaxy process for manufacturing a multi-layer semi-conductive circuit structure having high structural perfection and low mechanical stresses, said circuit structure layers each having a circuit-active component and being separately connectable in a circuit, said process comprising the steps of: a) providing a semiconductor substrate for growth of an epitaxial layer of high structural perfection, said substrate having a surface, said surface being crystallographic oriented in such a fashion that, during crystal growth, crystal growth velocity is smaller perpendicularly to said surface as compared to crystal growth velocity parallel to said surface and having a masked pattern disposed on said surface and exposing areas of said surface, said mask pattern having mask pattern portions masking areas of said surface and narrow intermediate spaces between said mask portions, said intermediate spaces being narrower than said mask portions whereby said surface is exposed in said spaces to have an exposed area less than that of said masked areas; b) providing a liquid solution of a semiconductor material in a solvent; c) in a spin liquid-phase epitaxy growth step, causing said solution to flow over said substrate by means of centrifugal forces, to grow an epitaxial layer of said semiconductor material, with high structural perfection, on said exposed surfaces and laterally over said mask pattern, said mask pattern and epitaxial layer thereby forming a semiconductor circuit structure layer; d) repeating said steps a)-c) with said circuit structure layer formed by the first iteration of step c) employed as said substrate for a subsequent iteration of step a) until the desired number of circuit structure layers is formed; and e) providing each said circuit structure layer with contact means for individual connection of said layers in said circuit.
Claim 3
Dependent Claim
20 words
A spin liquid-phase epitaxy method according to claim 1 wherein said semiconductive substrate and said semiconductor material are each silicon.
Claim 4
Dependent Claim
27 words
A spin liquid-phase epitaxy method according to claim 2 wherein said silicon substrate is monocrystalline silicon and said substrate surface is in the (111) or (100) plane.
Claim 5
Dependent Claim
37 words
A method as claimed in claim 1, wherein said semiconductor layer is monocrystalline and has a thickness and a varying composition, said varying composition being a function of distance from said substrate throughout said monocrystalline layer thickness.
Claim 6
Dependent Claim
22 words
A method as claimed in claim 4, wherein said varying composition is achieved by repeating said liquid-phase growing step with differing compositions.
Claim 7
Dependent Claim
25 words
A method as claimed in claim 4, wherein said varying composition is achieved by varying the temperature at which said liquid-phase growing step is conducted.
Claim 8
Dependent Claim
53 words
A method as claimed in claim 1, wherein said semiconductor layer is a monocrystalline layer formed from a material selected from the group consisting of germanium and a compound semi-conductor material containing at least one of the elements in periodic table group III and at least one element from periodic table group V.
Claim 9
Dependent Claim
43 words
A method as claimed in claim 7, wherein said substrate is made of gallium arsenide; said semiconductor material comprises gallium and arsenic; and said substrate surface is a crystallographic plane selected from the group consisting of the |111| plane and the |100| plane.
Claim 10
Independent Claim
25 words
A method as claimed in claim, 1 wherein said substrate is a bicrystalline substrate, with portions having a twin-plane or a small angle grain boundary.
Claim 11
Dependent Claim
33 words
A method as claimed in claim 1, wherein said mask pattern comprises an interrupted layer-like pattern formed of at least one material selected from the group consisting of carbon, insulator material and metal.
Claim 12
Dependent Claim
36 words
A method according to claim 1, comprising depositing, in a liquid epitaxial method, between said substrate and said semiconductor layer, an epitaxial transitional layer providing a transition of lattice constants and made from a germanium-silicon alloy.
Claim 13
Dependent Claim
21 words
A method according to claim 11, wherein said transitional layer has an increasing germanium content with increasing distance from said substrate.
Claim 14
Dependent Claim
37 words
A method as in claim 12, wherein said semiconductor material is grown as a thin epitaxial semiconductor layer and said growing step is repeated alternately with materials having different lattice constants to produce multiple thin semiconductor layers.
Claim 15
Dependent Claim
23 words
A method according to claim 13, wherein each said thin semiconductor layer is grown with a thickness between 1 and 1000 atom positions.
Claim 16
Dependent Claim
17 words
A method according to claim 13 wherein growing is done alternately with silicon and a silicon-germanium alloy.
Claim 17
Dependent Claim
15 words
A method according to claim 15, wherein said silicon-germanium alloy comprises 30 to 50% germanium.
Claim 18
Dependent Claim
35 words
A method as in claim 1, wherein said liquid-phase epitaxy-growing solution comprises a material selected from the group consisting of indium, gallium, antimony, bismuth, zinc, aluminum, and lead, as a solvent for said semiconductor material.
Claim 19
Dependent Claim
82 words
A method according to claim 17, wherein said solvent has a composition selected in such a manner that said grown semiconductor layer has a charge carrier density meeting a criterion selected from the following group: a) the charge carrier density assumes values under 10 14 per cubic centimeter; b) the charge carrier density assumes a desired value between 10 14 and 10 20 per cubic centimeter; and c) the charge carrier density assumes a value greater than 10 20 per cubic centimeter.
Claim 20
Dependent Claim
66 words
A method according to claim 1, wherein said solvent material is selected from one of the following groups: a) mainly indium, zinc or lead; b) the components of indium, gallium, antimony, bismuth, zinc and lead in an appropriate mixture relationship; and c) mainly gallium and respectively phosphorous and/or arsenic in high concentration; respectively, according to said respective desired charge carrier density criterion a), b) or c).
Claim 21
Dependent Claim
15 words
A method as claimed in claim 19, wherein said substrate is a polycrystalline polysilicone material.
Claim 22
Dependent Claim
31 words
A method as claimed in claim 1, wherein said substrate is polycrystalline and said semiconductor material is selected from the group consisting of said polycrystalline substrate material and crystallographically comparable materials.
Claim 23
Dependent Claim
15 words
A method as claimed in claim 1, wherein said substrate has defined localized crystal defects.
Claim 24
Dependent Claim
34 words
A method according to claim 22, wherein said substrate is bicrystalline with portions having a twin-plane or small angle grain boundary with very small angular displacement of the crystal planes of both crystal portions.
Claim 25
Dependent Claim
15 words
A method according to claim 23, wherein said angle is smaller than one angular minute.
Claim 26
Dependent Claim
23 words
A process according to claim 1 comprising growing said semiconductor layer to form a smooth surface extending across at least one mask portion.
References Cited (Backward Citations)
US3473978A
Cited
US3935040A
Cited
US3901744A
Cited
US3825449A
Cited
US3890194A
Cited
US3981764A
Cited
US4373988A
Cited
US4028147A
Cited
US4052252A
Cited
JPS535569A
Cited
US4258647A
Cited
US4274890A
Cited
US4298410A
Cited
JPS55163835A
Cited
US4246050A
Cited
US4543267A
Cited
DE2936800A1
Cited
US4319937A
Cited
US4521447A
Cited
US4522661A
Cited
JPS6066811A
Cited
JPS6066812A
Cited
EP0143957A1
Cited
US4529455A
Cited
US4609411A
Cited
JPS61105832A
Cited
US4551394A
Cited
JPS6298614A
Cited
US5326716A
Cited
US4717688A
Cited
US4711857A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-03-13 | 1998-09-12 | 1999-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-03-13 | 2002-09-12 | 2003-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-03-13 | 2006-09-12 | 2007-03-14 | $7700.00 | Window Closed / Lapsed |