Abstract In accordance with the finding of undesired, non-uniform, heterojunction layers in heterojunction light emitters, it has been determined that completely uniform layers can be grown by growing individual super thin layers (i.e., ≦200 A) of uniform composition and stacking as many of these layers as desired into a uniform "thick" (˜0.1μ) layer. This growth is accomplished by employing an LPE system wherein the substrate and melt are brought into contact for only the period of time during which the constituents of the melt deposit on the substrate in proper ratios. Steady-state diffusion-limited growth is avoided. The substrate is then removed from the melt, the melt allowed to re-equilibrate, and the process repeated as many times as desired.
A method for producing a homogeneous semiconductor layer upon a lattice matched semiconductor material substrate, comprising: contacting said substrate with a melt of said semiconductor layer for a period of time which is less than the time required for steady-state diffusion-limited growth of said semiconductor layer to be established; removing said substrate from contact with said melt for a time sufficient to allow the constiuent components of said melt to re-equilibrate; and repeating said contacting and removing steps a sufficient number of times to achieve a desired thickness of said semiconductor layer on said substrate.
Claim 2
Independent Claim
95 words
A method for producing a homogeneous semiconductor layer upon a lattice matched semiconductor material substrate, comprising: contacting said substrate with a melt of said semiconductor layer for a period of time which is less than the time required for steady-state diffusion-limited growth of said semiconductor layer to be established; removing said substrate from contact with said melt for a time sufficient to allow the constiuent components of said melt to re-equilibrate; and repeating said contacting and removing steps a sufficient number of times to achieve a desired thickness of said semiconductor layer on said substrate.
Claim 3
Dependent Claim
16 words
The method as defined in claim 1 wherein said melt is an alloy of semiconductor materials.
Claim 4
Dependent Claim
22 words
The method as defined in claim 2 wherein said melt is comprised of In 1-x Ga x P 1-z As z .
Claim 5
Dependent Claim
23 words
The method as defined in claim 3 wherein said substrate is contacted with said melt for no longer than 200ms at a time.