US3958265A
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Semiconductor light-emitting diode and method for producing same
Assignee: Individual
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Filing: 1974-05-02
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Granted: 1976-05-18
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Expires: 1994-05-02
Abstract
Abstract A semiconductor light-emitting diode comprising a p +-type GaAs substrate, an epitaxial p-layer of a monocrystalline solid solution of GaAlAs doped with Zn, an epitaxial n-layer of a monocrystalline solid solution of GaAlAs doped with Te, a heterojunction formed between said p- and n-layers which are doped to approximately the same concentration level, a compensated layer of a monocrystalline solid solution of GaAlAs doped with Zn and Te to a concentration level similar to that in said epitaxial n-layer, said compensated layer being disposed between said p- and n-layers and having a thickness commensurate with the diffusion length of the injected charge carriers in said n-layer. The method for producing said semiconductor light-emitting diode consists in that a substrate of GaAs and two liquid phases of Ga with Al saturated with arsenic, one containing Zn and Te, and the other containing Te are taken; the first liquid phase is brought in contact with the substrate to grow the p-layer, then a layer of the first liquid phase, whose thickness is controlled, is left on the substrate, and the second liquid phase is brought in contact therewith to alternately grow the compensated layer and the n-layer.
Inventors
- 👤 Revaz Alexandrovich Charmakadze
- 👤 Rafael Iraklievich Chikovani
- 👤 Zhores Ivanovich Alferov
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 12:50
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/819; H10H20/811; H10H20/822; H10H20/824; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3446; Y; Y10; Y10S; Y10S148/00; Y10S148/018; Y10S148/051; Y10S148/066; Y10S148/067; Y10S148/072; Y10S438/00; Y10S438/914; Y10S438/919
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
142 words
A semiconductor light-emitting diode comprising: a p +-type GaAs substrate; and epitaxial p-type layer of a monocrystalline solid solution of Al x .sbsb.1 Ga 1 -x .sbsb.1 As doped with Zn grown on said p +-type substrate; an epitaxial n type layer of monocrystalline solid solution of Ga 1 -x .sbsb.3 Al x .sbsb.3 A s doped with Te; a p c -type compensated layer of a monocrystalline solid solution of Al x .sbsb.2 Ga 1 -x .sbsb.2 As doped with Zn and Te to a concentration less than or equal to the concentration of the n type epitaxial layer, disposed between said epitaxial layers and having a thickness less than or equal to the length of diffusion of the injected carriers of current in said n type epitaxial layer; a basic heterojunction being formed between said epitaxial p-type and n-type layers.
Claim 2
Dependent Claim
142 words
A semiconductor light-emitting diode comprising: a p +-type GaAs substrate; and epitaxial p-type layer of a monocrystalline solid solution of Al x .sbsb.1 Ga 1 -x .sbsb.1 As doped with Zn grown on said p +-type substrate; an epitaxial n type layer of monocrystalline solid solution of Ga 1 -x .sbsb.3 Al x .sbsb.3 A s doped with Te; a p c -type compensated layer of a monocrystalline solid solution of Al x .sbsb.2 Ga 1 -x .sbsb.2 As doped with Zn and Te to a concentration less than or equal to the concentration of the n type epitaxial layer, disposed between said epitaxial layers and having a thickness less than or equal to the length of diffusion of the injected carriers of current in said n type epitaxial layer; a basic heterojunction being formed between said epitaxial p-type and n-type layers.
Claim 3
Dependent Claim
20 words
The diode as claimed in claim 1, wherein said epitaxial n-layer is grown on a portion of said compensated layer.
Claim 4
Dependent Claim
29 words
The diode as claimed in claim 1, wherein an epitaxial n +-type layer of Al x .sbsb.4 Ga 1 -x .sbsb.4 As is grown on said n-type epitaxial layer.
Claim 5
Dependent Claim
19 words
The diode as claimed in claim 2, wherein an epitaxial n + layer is grown on said epitaxial n-layer.
Claim 6
Dependent Claim
22 words
The diode as claimed in claim 3, wherein said epitaxial n + layer is grown on a portion of said epitaxial n-layer.
Claim 7
Dependent Claim
22 words
The diode as claimed in claim 4, wherein said epitaxial n + layer is grown on a portion of said epitaxial n-layer.
Claim 8
Dependent Claim
30 words
The diode as claimed in claim 3, wherein epitaxial n + +-type layer of Al x .sbsb.5 Ga 1 -x .sbsb.5 As is grown on said epitaxial n +-type layer.
Claim 9
Dependent Claim
22 words
The diode as claimed in claim 4, wherein an epitaxial n + + layer is grown on said epitaxial n + layer.
Claim 10
Dependent Claim
22 words
The diode as claimed in claim 5, wherein an epitaxial n + + layer is grown on said epitaxial n + layer.
Claim 11
Dependent Claim
22 words
The diode as claimed in claim 6, wherein an epitaxial n + + layer is grown on said epitaxial n + layer.
Claim 12
Dependent Claim
25 words
The diode as claimed in claim 7, wherein said epitaxial n + + layer is grown on a portion of said epitaxial n + layer.
Claim 13
Dependent Claim
25 words
The diode as claimed in claim 8, wherein said epitaxial n + + layer is grown on a portion of said epitaxial n + layer.
Claim 14
Dependent Claim
25 words
The diode as claimed in claim 9, wherein said epitaxial n + + layer is grown on a portion of said epitaxial n + layer.
Claim 15
Dependent Claim
25 words
The diode as claimed in claim 10, wherein said epitaxial n + + layer is grown on a portion of said epitaxial n + layer.
Claim 16
Dependent Claim
30 words
The diode as claimed in claim 1, wherein an ohmic metal contact is deposited on said substrate on the side opposite to that where said epitaxial p-layer has been grown.
Claim 17
Dependent Claim
180 words
A semiconductor light-emitting diode comprising: a p +-type GaAs substrate; an epitaxial p-type layer of a monocrystalline solid solution of Al x .sbsb.1 Ga.sub. 1 -x .sbsb.1 As doped with Zn grown on said p +-type substrate; an epitaxial n-type layer of a monocrystalline solid solution of Al x .sbsb.3 Ga 1 -x .sbsb.3 As doped with Te; a compensated Pc-type layer of monocrystalline solid solution of Al x .sbsb.2 Ga 1 -x2 As doped with Zn and Te to a concentration in the Pc-type layer less than or equal to the concentration of the n type epitaxial layer, disposed between said epitaxial layers and having a thickness less than or equal to the length of diffusion of the injected carriers of current in said n type layer; a basic heterojunction arranged between said epitaxial p-type and n-type layers; a first ohmic metal contact deposited on a part of the surface of said epitaxial n-type layer; and the second ohmic metal contact deposited on said substrate on the side opposite to that where said epitaxial p-type layer has been grown.
Claim 18
Dependent Claim
180 words
A semiconductor light-emitting diode comprising: a p +-type GaAs substrate; an epitaxial p-type layer of a monocrystalline solid solution of Al x .sbsb.1 Ga.sub. 1 -x .sbsb.1 As doped with Zn grown on said p +-type substrate; an epitaxial n-type layer of a monocrystalline solid solution of Al x .sbsb.3 Ga 1 -x .sbsb.3 As doped with Te; a compensated Pc-type layer of monocrystalline solid solution of Al x .sbsb.2 Ga 1 -x2 As doped with Zn and Te to a concentration in the Pc-type layer less than or equal to the concentration of the n type epitaxial layer, disposed between said epitaxial layers and having a thickness less than or equal to the length of diffusion of the injected carriers of current in said n type layer; a basic heterojunction arranged between said epitaxial p-type and n-type layers; a first ohmic metal contact deposited on a part of the surface of said epitaxial n-type layer; and the second ohmic metal contact deposited on said substrate on the side opposite to that where said epitaxial p-type layer has been grown.
Claim 19
Dependent Claim
162 words
A semiconductor light-emitting diode comprising: a p +-type GaAs substrate having a charge carrier concentration of 0.8 to 5 ×10 19 cm - 3 ; an epitaxial p-layer of a monocrystalline solid solution of GaAlAs doped with Zn to a concentration of 0.4-2×10 18 cm - 3 , grown on said substrate; an epitaxial n-layer of a monocrystalline solid of GaAlAs doped with Te to a concentration of 0.6 to 5×10 18 cm - 3 , grown on said p-layer; said epitaxial p- and n-layers being doped to approximately the same concentration level; a compensated layer of a monocrystalline solid solution of GaAlAs doped with Zn and Te to a concentration level approximately equal to that in said epitaxial n-layer, with said compensated layer being arranged between said epitaxial p- and n-layers, and having a thickness of 1.5 to 2.0 microns, commensurate with the diffusion length of the injected charge carriers in said n-layer, thereby forming a hetrojunction between said epitaxial layers.
Claim 20
Dependent Claim
162 words
A semiconductor light-emitting diode comprising: a p +-type GaAs substrate having a charge carrier concentration of 0.8 to 5 ×10 19 cm - 3 ; an epitaxial p-layer of a monocrystalline solid solution of GaAlAs doped with Zn to a concentration of 0.4-2×10 18 cm - 3 , grown on said substrate; an epitaxial n-layer of a monocrystalline solid of GaAlAs doped with Te to a concentration of 0.6 to 5×10 18 cm - 3 , grown on said p-layer; said epitaxial p- and n-layers being doped to approximately the same concentration level; a compensated layer of a monocrystalline solid solution of GaAlAs doped with Zn and Te to a concentration level approximately equal to that in said epitaxial n-layer, with said compensated layer being arranged between said epitaxial p- and n-layers, and having a thickness of 1.5 to 2.0 microns, commensurate with the diffusion length of the injected charge carriers in said n-layer, thereby forming a hetrojunction between said epitaxial layers.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-05-18 | 1979-11-17 | 1980-05-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-05-18 | 1983-11-17 | 1984-05-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-05-18 | 1987-11-17 | 1988-05-18 | $7700.00 | Window Closed / Lapsed |