US4298410A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for growing a liquid phase epitaxial layer on a semiconductor substrate
Assignee: Toshiba Corp
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Filing: 1980-06-05
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Granted: 1981-11-03
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Expires: 2000-06-05
Abstract
Abstract A method for selectively growing a liquid phase epitaxial layer on a semiconductor substrate comprises a first step of supplying a liquid phase epitaxial solution in a chamber of an upper body and supplying a semiconductor substrate on which is selectively coated an insulating layer in a recess in an under body, the upper surface of which constituting the bottom of said chamber; a second step of heating said semiconductor substrate and said solution to a predetermined temperature and sliding said upper body and said under body relative to each other so as to position said chamber above said recess, thereby effecting contact between said solution and said semiconductor substrate; a third step of effecting said sliding again so as to separate said recess and said chamber so that said solution remains on the regions of said semiconductor substrate surface on which said insulating layer is not coated; and a fourth step of cooling said solution and said semiconductor substrate at a constant cooling rate so as to grow a liquid phase epitaxial layer.
Inventors
- 👤 Koichiro Nakajima
- 👤 Masaharu Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:58
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/12; H; H10; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3438; H10P14/3441; H10P14/3444; Y; Y10; Y10S; Y10S438/00; Y10S438/928
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
110 words
A method for selectively growing a liquid phase epitaxial layer based on a liquid phase epitaxy, comprising the steps of arranging a liquid phase epitaxial solution apart from a semiconductor substrate having an insulating layer selectively formed on the surface, heating the substrate and the epitaxial solution to a predetermined temperature and, then, bringing them into mutual contact, selectively removing the solution such that the solution remains on the exposed surface of the substrate, with the insulating layer bearing substantially no solution, and cooling the substrate and the solution at a predetermined cooling rate so as to grow a liquid phase epitaxial layer on the exposed surface of the substrate.
Claim 2
Independent Claim
110 words
A method for selectively growing a liquid phase epitaxial layer based on a liquid phase epitaxy, comprising the steps of arranging a liquid phase epitaxial solution apart from a semiconductor substrate having an insulating layer selectively formed on the surface, heating the substrate and the epitaxial solution to a predetermined temperature and, then, bringing them into mutual contact, selectively removing the solution such that the solution remains on the exposed surface of the substrate, with the insulating layer bearing substantially no solution, and cooling the substrate and the solution at a predetermined cooling rate so as to grow a liquid phase epitaxial layer on the exposed surface of the substrate.
Claim 3
Independent Claim
112 words
A method for selectively growing a liquid phase epitaxial layer based on a liquid phase epitaxy, comprising the steps of arranging a liquid phase epitaxial solution apart from a semiconductor substrate having an insulating layer selectively formed on the surface, bringing the substrate and the epitaxial solution into mutual contact, selectively removing the solution such that the solution remains on the exposed surface of the substrate, with the insulating layer bearing substantially no solution, heating the substrate and the solution to a predetermined temperature, and cooling the substrate and the solution at a predetermined cooling rate so as to grow a liquid phase epitaxial layer below the exposed surface of the substrate.
Claim 4
Independent Claim
112 words
A method for selectively growing a liquid phase epitaxial layer based on a liquid phase epitaxy, comprising the steps of arranging a liquid phase epitaxial solution apart from a semiconductor substrate having an insulating layer selectively formed on the surface, bringing the substrate and the epitaxial solution into mutual contact, selectively removing the solution such that the solution remains on the exposed surface of the substrate, with the insulating layer bearing substantially no solution, heating the substrate and the solution to a predetermined temperature, and cooling the substrate and the solution at a predetermined cooling rate so as to grow a liquid phase epitaxial layer below the exposed surface of the substrate.
Claim 5
Independent Claim
124 words
A method of selectively growing a liquid phase epitaxial layer based on a liquid phase epitaxy, comprising the steps of arranging a liquid phase epitaxial solution apart from a semiconductor substrate having an insulating layer selectively formed on the surface, heating the substrate and the epitaxial solution to a predetermined temperature and, then, bringing them into mutual contact, selectively removing the solution such that the solution remains on the exposed surface of the substrate, with the insulating layer bearing substantially no solution, heating the substrate and the solution further to a predetermined temperature, and cooling the substrate and the solution at a predetermined cooling rate so as to grow a liquid phase epitaxial layer both above and below the exposed surface of the substrate.
Claim 6
Independent Claim
124 words
A method of selectively growing a liquid phase epitaxial layer based on a liquid phase epitaxy, comprising the steps of arranging a liquid phase epitaxial solution apart from a semiconductor substrate having an insulating layer selectively formed on the surface, heating the substrate and the epitaxial solution to a predetermined temperature and, then, bringing them into mutual contact, selectively removing the solution such that the solution remains on the exposed surface of the substrate, with the insulating layer bearing substantially no solution, heating the substrate and the solution further to a predetermined temperature, and cooling the substrate and the solution at a predetermined cooling rate so as to grow a liquid phase epitaxial layer both above and below the exposed surface of the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-11-02 | 1985-05-04 | 1985-11-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-11-02 | 1989-05-04 | 1989-11-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-11-02 | 1993-05-04 | 1993-11-03 | $7700.00 | Window Closed / Lapsed |