US3697336A
Expired / Lapsed
US
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Method of making semiconductor devices
Assignee: RCA Corp
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Filing: 1966-05-02
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Granted: 1972-10-10
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Expires: 1986-05-02
Abstract
Abstract A LASER DIODE IS MADE BY FORMING ON A FIRST LAYER OF A SEMICONDUCTOR MATERIAL A SECOND LAYER OF A SEMICONDUCTORE MATERIAL. MASKING STRIPS OF SILICON DIOXIDE ARE PROVIDED IN SPACED RELATION ON THE SURFACE OF THE SECOND LAYER LEAVING PORTIONS OF THE SURFACE EXPOSED. THE EXPOSED PORTIONS OF THE SECOND LAYER ARE DISSOLVED TO THE DEPTH OF THE JUNCTION BETWEEN THE FIRST AND SECOND LAYERS USING A MOLTEN MIXTURE OF GA AND GAAS. BY SOLUTION REGROWN, A THIRD MATERIAL IS DEPOSITED IN PLACE OF THE PORTIONS DISSOLVED.
Inventors
- 👤 Michael F Lamorte
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 19:13
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H10; H10H; H10H20/00; H10H20/80; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3444; H10P14/3446; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/056; Y10S148/107; Y10S438/00; Y10S438/955
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-10-10 | 1976-04-10 | 1976-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-10-10 | 1980-04-10 | 1980-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-10-10 | 1984-04-10 | 1984-10-10 | $7700.00 | Window Closed / Lapsed |