Bergh ctal
Abstract
Abstract CRYSTALLINE LAYERS OF GROUP III-V SEMICONDUCTOR MATERIALS ARE GROWN EPITAXIALLY FROM SOLUTION BY A METHOD WHICH INCLUDES THE ISOLATION OF SMALL EQUAL PORTIONS OF SOLUTION FROM A SOLUTION RESERVOIR. THE PORTIONS IN CONTACT WITH THE CRYSTAL SUBSTRATE ARE CONSTRAINED IN A DIRECTION PERPENDICULAR TO THE SUBSTRATE TO THE BE LESS THAN MILLIMETERS THICK BEFORE CRYSTAL GROWTH IS INITIATED BY LOWERING THE TEMPERATURE OF THE SUBSTRATE AND ITS CONTACTING SOLUTION. AT THE TERMINATION OF GROWTH, THE DEPLETED SOLUTION IS REMOVED FROM THE GROWN LAYER LEAVING A SURFACE SUFFICIENTLY PERFECT TO ALLOW FURTHER PROCESSING WITHOUT AN INTERVENING GRINDING OR POLISHING OPERATION.
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Bibliographic Details
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-08-26 | 1978-02-25 | 1978-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-08-26 | 1982-02-25 | 1982-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-08-26 | 1986-02-25 | 1986-08-27 | $7700.00 | Window Closed / Lapsed |