US6156584A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor light emitting device
Assignee: Rohm Co Ltd
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Filing: 1998-03-26
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Granted: 2000-12-05
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Expires: 2018-03-26
Abstract
Abstract Deposited on a wafer-like substrate for forming a plurality of light emitting device chips is a semiconductor layer laminate with a different property from that of the substrate. Then, electrodes are provided on and in electric connection with a top semiconductor layer of a first conductivity type of the semiconductor layer laminate, and on and in electric connection with a semiconductor layer of a second conductivity type, exposed by locally etching the semiconductor layer laminate, in association with the individual chips. Then, the semiconductor layer laminate is etched at boundary portions between the chips to expose the substrate, and the substrate is broken at the exposed portions into the chips. As the semiconductor layer laminate is etched out at the boundary portions between the chips before breaking the wafer, breaking can be facilitated without damaging the light emitting portions of the semiconductor layer laminate. This helps provide high-performance semiconductor light emitting devices.
Inventors
- 👤 Norikazu Itoh
- 👤 Shunji Nakata
- 👤 Yukio Shakuda
- 👤 Masayuki Sonobe
- 👤 Tsuyoshi Tsutsui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 15:01
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/0201; H10; H10H; H10H20/00; H10H20/01; H01S5/0202; H01S5/0203; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
115 words
A method of manufacturing a semiconductor light emitting device comprising the steps of: epitaxially growing a semiconductor layer laminate made of gallium nitride-based compound semiconductor on a wafer form substrate made of sapphire; providing electrodes on and in electric connection with a top semiconductor layer of a first conductivity type of said semiconductor layer laminate, and electrodes on and in electric connection with a semiconductor layer of a second conductivity type, exposed by locally etching said semiconductor layer laminate, in association with individual chips; etching said semiconductor layer laminate at the entire boundary surrounding said chips to expose said substrate; and breaking said substrate at said exposed portions to separate said wafer into said chips.
Claim 2
Independent Claim
115 words
A method of manufacturing a semiconductor light emitting device comprising the steps of: epitaxially growing a semiconductor layer laminate made of gallium nitride-based compound semiconductor on a wafer form substrate made of sapphire; providing electrodes on and in electric connection with a top semiconductor layer of a first conductivity type of said semiconductor layer laminate, and electrodes on and in electric connection with a semiconductor layer of a second conductivity type, exposed by locally etching said semiconductor layer laminate, in association with individual chips; etching said semiconductor layer laminate at the entire boundary surrounding said chips to expose said substrate; and breaking said substrate at said exposed portions to separate said wafer into said chips.
Claim 3
Dependent Claim
24 words
The method according to claim 1, wherein linear notches are formed at a back of said substrate at breaking thereof to break said substrate.
Claim 4
Dependent Claim
29 words
The method according to claim 2, wherein notches are formed in the surface of said substrate which is exposed by etching said semiconductor layer laminate at said entire boundary.
Claim 5
Dependent Claim
32 words
The method according to claim 1, wherein said semiconductor layer laminate has a clad layer of said second conductivity type, an active layer and a clad layer of said first conductivity type.
Claim 6
Dependent Claim
43 words
The method according to claim 4, wherein a current diffusion layer comprised of a metal layer is formed between said clad layer of said second conductivity type and those electrodes which are electrically connected to said clad layer of said second conductivity type.
Claim 7
Dependent Claim
40 words
The method according to claim 4, wherein said clad layers of said first conductivity type and said second conductivity type are formed of a GaN or AlGaN-based compound semiconductor and said active layer is formed of an InGaN-based compound semiconductor.
Claim 8
Dependent Claim
33 words
The method according to claim 1, wherein a mask of Ti is used at a time of etching said semiconductor layer laminate until said substrate is exposed at said boundary between said chips.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-05 | 2004-06-05 | 2004-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-05 | 2008-06-05 | 2008-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-05 | 2012-06-05 | 2012-12-05 | $7700.00 | Window Closed / Lapsed |