Method for the growing of heteroepitaxial layers

Claim 1

A method for the manufacture of a monocrystalline layer made of a second semiconductor material, on a substrate having a growth face and a non-growth face and made of a first semiconductor material, comprising the steps of: initiating growth by vapor phase deposition on at least one seed of a chemical composition that is identical to the second semiconductor material of the layer to be obtained, confining the growth in a space defined by the growth face of the substrate and a confinement layer that opposes the growth face and that is made of a material that is different from the second semiconductor material in such a way that there can be neither nucleation nor deposition of the second semiconductor material whether on this confinement layer or on said growth face of the substrate; wherein a cross-section in a plane that is substantially parallel to the growth direction of the seed has a profile along a direction that is perpendicular to the growth direction that comprises a thick central part that is between two thinned lateral parts; and wherein the region between the substrate and the confinement layer has a cross-section with the same profile as the cross-section of the seed.

Claim 2

A method for the manufacture of a monocrystalline layer made of a second semiconductor material, on a substrate having a growth face and a non-growth face and made of a first semiconductor material, comprising the steps of: initiating growth by vapor phase deposition on at least one seed of a chemical composition that is identical to the second semiconductor material of the layer to be obtained, confining the growth in a space defined by the growth face of the substrate and a confinement layer that opposes the growth face and that is made of a material that is different from the second semiconductor material in such a way that there can be neither nucleation nor deposition of the second semiconductor material whether on this confinement layer or on said growth face of the substrate; wherein a cross-section in a plane that is substantially parallel to the growth direction of the seed has a profile along a direction that is perpendicular to the growth direction that comprises a thick central part that is between two thinned lateral parts; and wherein the region between the substrate and the confinement layer has a cross-section with the same profile as the cross-section of the seed.

Claim 4

A method for the growth of heteroepitaxial layers, comprising the following steps: a) a first step of making, on a monocrystalline semiconductor substrate comprising a first semiconductor material and having a growth surface and a non-growth surface, a first layer of a second semiconductor material; b) a second step of etching, in the first layer, which has a first thickness, bands constituting thinning features in the first layer, which are thinner than the first thickness; c) a third step of making, on the first layer, a second layer that is made of a material such that there can be neither nucleation nor deposition onto the second layer, of the second semiconductor material; d) a fourth step of etching, in the second layer, at least one first aperture reaching the first layer; e) a fifth step of chemical etching, from said aperture, some of the first layer of semiconductor material so as to leave at least one seed of the second semiconductor material between the second layer and the substrate, thereby forming a confinement space; f) a sixth step of growing along a first growth direction, by vapor phase epitaxy, monocrystalline second semiconductor material in the confinement space.

Claim 5

A method for the growth of heteroepitaxial layers, comprising the following steps: a) a first step of making, on a monocrystalline semiconductor substrate comprising a first semiconductor material and having a growth surface and a non-growth surface, a first layer of a second semiconductor material; b) a second step of etching, in the first layer, which has a first thickness, bands constituting thinning features in the first layer, which are thinner than the first thickness; c) a third step of making, on the first layer, a second layer that is made of a material such that there can be neither nucleation nor deposition onto the second layer, of the second semiconductor material; d) a fourth step of etching, in the second layer, at least one first aperture reaching the first layer; e) a fifth step of chemical etching, from said aperture, some of the first layer of semiconductor material so as to leave at least one seed of the second semiconductor material between the second layer and the substrate, thereby forming a confinement space; f) a sixth step of growing along a first growth direction, by vapor phase epitaxy, monocrystalline second semiconductor material in the confinement space.

Claim 12

A method for growing heteroepitaxial semiconductor layers, comprising the steps of: growing a first layer of a first semiconductor material on a surface of a substrate comprising a second semiconductor material; etching bands that are thinner than thicker regions of the first layer in the first layer; depositing a confinement layer onto the first layer, wherein the confinement layer comprises a material on which there can be neither nucleation or deposition by vapor phase growth under any of the conditions in which nucleation or deposition of the first semiconductor material onto a surface of the first semiconductor material does occur; etching at least one aperture into the second layer which reaches through the second layer to a portion of the first layer; chemically etching thinner and thicker regions of the first layer, from the portion of the first layer that is exposed through the aperture, thereby leaving a recessed seed crystal of the first semiconductor material in a confinement space that is between the surface of the substrate and the second layer; growing monocrystal of the first semiconductor material in the confinement space by vapor phase epitaxy onto the recessed seed crystal.

Claim 13

A method for growing heteroepitaxial semiconductor layers, comprising the steps of: growing a first layer of a first semiconductor material on a surface of a substrate comprising a second semiconductor material; etching bands that are thinner than thicker regions of the first layer in the first layer; depositing a confinement layer onto the first layer, wherein the confinement layer comprises a material on which there can be neither nucleation or deposition by vapor phase growth under any of the conditions in which nucleation or deposition of the first semiconductor material onto a surface of the first semiconductor material does occur; etching at least one aperture into the second layer which reaches through the second layer to a portion of the first layer; chemically etching thinner and thicker regions of the first layer, from the portion of the first layer that is exposed through the aperture, thereby leaving a recessed seed crystal of the first semiconductor material in a confinement space that is between the surface of the substrate and the second layer; growing monocrystal of the first semiconductor material in the confinement space by vapor phase epitaxy onto the recessed seed crystal.