US4615762A
Expired / Lapsed
US
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Method for thinning silicon
Assignee: Intersil Corp
•
Filing: 1985-04-30
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Granted: 1986-10-07
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Expires: 2005-04-30
Abstract
Abstract A method for substantially uniformly thinning a silicon layer comprises providing a silicon layer having a surface, oxidizing substantially all of the surface so as to transform a uniformly thick layer of silicon into oxide, and removing all the oxide so as to expose the silicon layer.
Inventors
- 👤 Lubomir L. Jastrzebski
- 👤 John F. Corboy, Jr.
- 👤 Robert H. Pagliaro, Jr.
- 👤 Ramazan Soydan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 06:47
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/276; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
97 words
A method for substantially uniformly thinning an epitaxially grown silicon layer comprising: forming an insulator layer having a plurality of apertures therein on a substrate, the widest spacing between apertures being X; epitaxially depositing silicon within the apertures and over the insulator layer so as to form a continuous monocrystalline silicon layer having a thickness substantially equal to X; oxidizing substantially all of the surface of the monocrystalline silicon layer so as to transform a uniformly thick layer of said silicon layer into oxide; and removing all of said oxide so as to expose said silicon layer.
Claim 2
Independent Claim
97 words
A method for substantially uniformly thinning an epitaxially grown silicon layer comprising: forming an insulator layer having a plurality of apertures therein on a substrate, the widest spacing between apertures being X; epitaxially depositing silicon within the apertures and over the insulator layer so as to form a continuous monocrystalline silicon layer having a thickness substantially equal to X; oxidizing substantially all of the surface of the monocrystalline silicon layer so as to transform a uniformly thick layer of said silicon layer into oxide; and removing all of said oxide so as to expose said silicon layer.
Claim 3
Dependent Claim
14 words
A method in accordance with claim 1 wherein said silicon layer is substantially planar.
Claim 4
Dependent Claim
26 words
A method in accordance with claim 1 wherein said oxidizing is performed by heating at a predetermined temperature at a predetermined pressure for a predetermined time.
Claim 5
Dependent Claim
20 words
A method in accordance with claim 1 further comprising repeating said oxidizing and removing steps a predetermined number of times.
Claim 6
Dependent Claim
17 words
A method in accordance with claim 1 wherein said removing is performed by immersion in buffered HF.
References Cited (Backward Citations)
US3892891A
Cited
US3767494A
Cited
US3966517A
Cited
US4050979A
Cited
US3929529A
Cited
US4261791A
Cited
US4454002A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-10-06 | 1990-04-07 | 1990-10-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-10-06 | 1994-04-07 | 1994-10-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-10-06 | 1998-04-07 | 1998-10-07 | $7700.00 | Window Closed / Lapsed |