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US4454002A
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US
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Controlled thermal-oxidation thinning of polycrystalline silicon
Assignee: Harris Corp
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Filing: 1983-09-19
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Granted: 1984-06-12
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Expires: 2003-09-19
Abstract
Abstract A polycrystalline silicon fuse is formed to have a thickness below 1000 Angstroms by depositing a polycrystalline silicon layer to a thickness greater than 1200 Angstroms, oxidizing the polycrystalline silicon in a partially rich oxygen atmosphere to under 1000 Angstroms, removing the oxide layer over at least a sample fuse and measuring the thickness of the polycrystalline silicon.
Inventors
- 👤 Kevin T. Hankins
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 12:19
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; Y; Y10; Y10S; Y10S438/00; Y10S438/911
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
67 words
A method of fabricating a polysilicon fuse comprising: depositing a layer of polycrystalline silicon on a substrate to have a thickness of greater than 1200 Angstroms; oxidizing said polycrystalline layer to form a polycrystalline layer of a thickness below 1000 Angstroms with an oxide layer thereon; removing said oxide layer over a measurement area of said polycrystalline layer; and measuring the final thickness of said polycrystalline layer.
Claim 2
Independent Claim
67 words
A method of fabricating a polysilicon fuse comprising: depositing a layer of polycrystalline silicon on a substrate to have a thickness of greater than 1200 Angstroms; oxidizing said polycrystalline layer to form a polycrystalline layer of a thickness below 1000 Angstroms with an oxide layer thereon; removing said oxide layer over a measurement area of said polycrystalline layer; and measuring the final thickness of said polycrystalline layer.
Claim 3
Dependent Claim
16 words
The method according to claim 1 including doping said polycrystalline layer with impurities prior to oxidizing.
Claim 4
Dependent Claim
16 words
The method according to claim 1 including patterning said polycrystalline layer to form individual fuse structures.
Claim 5
Dependent Claim
29 words
The method according to claim 3 wherein said patterning includes forming a mask on said polycrystalline layer, etching said polycrystalline layer using said mask and removing said mask layer.
Claim 6
Dependent Claim
25 words
The method according to claim 1 wherein said polycrystalline layer is deposited by low pressure chemical vapor deposition to a thickness of approximately 1800 Angstroms.
Claim 7
Dependent Claim
38 words
The method according to claim 5 wherein said polycrystalline layer is oxidized to form a polycrystalline layer having a thickness of approximately 50 Angstroms more than the desired thickness and removing said oxide layer over all fuse structures.
Claim 8
Dependent Claim
24 words
The method according to claim 5 wherein said polycrystalline layer is oxidized to form a polycrystalline layer having a thickness of approximately 750 Angstroms.
Claim 9
Dependent Claim
18 words
The method according to claim 1 wherein said polycrystalline layer is oxidized in a partially oxygen rich environment.
Claim 10
Dependent Claim
15 words
The method according to claim 8 wherein said environment is less than 50% oxygen rich.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-06-12 | 1987-12-12 | 1988-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-06-12 | 1991-12-12 | 1992-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-06-12 | 1995-12-12 | 1996-06-12 | $7700.00 | Window Closed / Lapsed |