US6130148A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Interconnect for semiconductor components and method of fabrication
Assignee: Micron Technology Inc
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Filing: 1997-12-12
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Granted: 2000-10-10
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Expires: 2017-12-12
Abstract
Abstract An interconnect for electrically contacting semiconductor components such as bare dice, wafers and chip scale packages, is provided. The interconnect includes a rigid substrate and polymer contact members formed on the substrate. The polymer contact members are adapted to electrically engage contacts (e.g., bond pads, solder bumps) on the component. In one embodiment the polymer contact members are raised members with penetrating projections covered with conductive layers. In another embodiment the polymer contact members are indentations and penetrating projections covered with conductive layers. A method for fabricating the polymer contact members includes the steps of depositing, patterning and etching a thick film resist. These steps are followed by electrolessly depositing conductive layers on the contact members, and conductors in electrical communication with the conductive layers.
Inventors
- 👤 Warren M. Farnworth
- 👤 Salman Akram
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:28
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/63; H10W70/635; H10W70/67; H10W70/68; H10W72/00; H10W72/01; H10W72/012; H10W72/01231; H10W72/01251; H10W72/071; H10W72/072; H10W72/07251; H10W72/20
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
78 words
A method for fabricating an interconnect for a semiconductor component having a contact comprising: providing a substrate; providing a resist configured to form features with an aspect ratio (height/width) of at least 10; depositing the resist on the substrate to form a polymer layer; exposing, etching, and curing the polymer layer to form a raised contact member on the substrate; and forming a conductive layer on the contact member configured to electrically engage the contact on the component.
Claim 2
Independent Claim
78 words
A method for fabricating an interconnect for a semiconductor component having a contact comprising: providing a substrate; providing a resist configured to form features with an aspect ratio (height/width) of at least 10; depositing the resist on the substrate to form a polymer layer; exposing, etching, and curing the polymer layer to form a raised contact member on the substrate; and forming a conductive layer on the contact member configured to electrically engage the contact on the component.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein a height of the polymer layer and the contact member is about 3 mils to 10 mils.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein the resist comprises an epoxy, a solvent and a photoinitiator.
Claim 5
Dependent Claim
32 words
The method of claim 1 further comprising forming a projection in the polymer layer prior to etching such that the contact member includes the projection for penetrating the contact on the component.
Claim 6
Independent Claim
76 words
A method for fabricating an interconnect for a semiconductor component having a bumped contact comprising: providing a substrate; providing a resist configured to form features with an aspect ratio (height/width) of at least 10; depositing the resist on the substrate to form a polymer layer; exposing and etching the polymer layer to form an indentation configured to retain the bumped contact on the component; curing the polymer layer; and depositing a conductive layer in the indentations.
Claim 7
Independent Claim
76 words
A method for fabricating an interconnect for a semiconductor component having a bumped contact comprising: providing a substrate; providing a resist configured to form features with an aspect ratio (height/width) of at least 10; depositing the resist on the substrate to form a polymer layer; exposing and etching the polymer layer to form an indentation configured to retain the bumped contact on the component; curing the polymer layer; and depositing a conductive layer in the indentations.
Claim 8
Dependent Claim
15 words
The method of claim 5 wherein the indentation has a death of about 1-5 mils.
Claim 9
Dependent Claim
16 words
The method of claim 5 wherein the resist comprises an epoxy, a solvent and a photoinitiator.
Claim 10
Dependent Claim
30 words
The method of claim 5 further comprising forming at least one projection in the indentation for penetrating the bumped contact on the component by exposing and etching the polymer layer.
Claim 11
Independent Claim
114 words
A method for fabricating an interconnect for a semiconductor component having a plurality of contacts comprising: providing a substrate; providing a resist configured to form features having an aspect ratio (height/width) of at least 10; depositing the resist on the substrate to form a resist layer with a thickness of about 3 to 10 mils; exposing the resist layer through openings in a reticle; etching the resist layer to remove either exposed or unexposed portion of the resist layer to form a plurality of raised contact members corresponding to a pattern of the contacts on the component and having a height corresponding to the thickness; and forming a conductive layer on each contact member.
Claim 12
Independent Claim
114 words
A method for fabricating an interconnect for a semiconductor component having a plurality of contacts comprising: providing a substrate; providing a resist configured to form features having an aspect ratio (height/width) of at least 10; depositing the resist on the substrate to form a resist layer with a thickness of about 3 to 10 mils; exposing the resist layer through openings in a reticle; etching the resist layer to remove either exposed or unexposed portion of the resist layer to form a plurality of raised contact members corresponding to a pattern of the contacts on the component and having a height corresponding to the thickness; and forming a conductive layer on each contact member.
Claim 13
Dependent Claim
16 words
The method of claim 9 wherein the resist comprises an epoxy, a solvent and a photoinitiator.
Claim 14
Dependent Claim
17 words
The method of claim 9 wherein forming the conductive layer comprises an electroless or electrochemical deposition process.
Claim 15
Dependent Claim
28 words
The method of claim 9 further comprising forming an insulating layer on the substrate prior to the depositing step and endpointing the etching step on the insulating layer.
Claim 16
Independent Claim
96 words
A method for fabricating an interconnect for a semiconductor component having a bumped contact comprising: providing a substrate; providing a resist configured to form features having an aspect ratio (height/width) of at least 10; depositing the resist on the substrate to form a resist layer; etching the resist layer to form an indentation therein configured to retain the bumped contact and having a depth of about 1-5 mils; depositing a conductive layer within the indentation configured to electrically engage the bumped contact; and forming a conductor on the substrate in electrical communication with the conductive layer.
Claim 17
Independent Claim
96 words
A method for fabricating an interconnect for a semiconductor component having a bumped contact comprising: providing a substrate; providing a resist configured to form features having an aspect ratio (height/width) of at least 10; depositing the resist on the substrate to form a resist layer; etching the resist layer to form an indentation therein configured to retain the bumped contact and having a depth of about 1-5 mils; depositing a conductive layer within the indentation configured to electrically engage the bumped contact; and forming a conductor on the substrate in electrical communication with the conductive layer.
Claim 18
Dependent Claim
16 words
The method of claim 13 wherein the resist comprises an epoxy, a solvent and a photoinitiator.
Claim 19
Dependent Claim
21 words
The method of claim 13 wherein the substrate comprises a material selected from the group consisting of ceramic, mullite and silicon.
Claim 20
Dependent Claim
22 words
The method of claim 13 wherein the conductive layer comprises a material selected from the group consisting of nickel, palladium and platinum.
Claim 21
Independent Claim
83 words
A method for fabricating an interconnect for a semiconductor component having a contact comprising: providing a substrate; providing a resist comprising epoxy and a photoinitiator; depositing the resist on the substrate to form a resist layer having a thickness; exposing the resist layer through a reticle; etching the resist layer to form a contact member on the substrate having a height equal to the thickness; and depositing a conductive layer on the contact member configured to electrically engage the contact on the component.
Claim 22
Independent Claim
83 words
A method for fabricating an interconnect for a semiconductor component having a contact comprising: providing a substrate; providing a resist comprising epoxy and a photoinitiator; depositing the resist on the substrate to form a resist layer having a thickness; exposing the resist layer through a reticle; etching the resist layer to form a contact member on the substrate having a height equal to the thickness; and depositing a conductive layer on the contact member configured to electrically engage the contact on the component.
Claim 23
Dependent Claim
23 words
The method of claim 17 further comprising forming an insulating layer on the substrate and endpointing the etching step on the insulating layer.
Claim 24
Dependent Claim
34 words
The method of claim 17 further comprising forming a projection in the resist layer prior to the etching step such that the contact member includes the projection for penetrating the contact on the component.
Claim 25
Independent Claim
89 words
A method for fabricating an interconnect for a semiconductor component having a bumped contact comprising: providing a substrate; providing a resist comprising epoxy and a photoinitiator; depositing the resist on the substrate to form a resist layer; exposing the resist layer through a reticle; etching the resist layer to form an indentation therein sized to retain the bumped contact on the component and a projection in the indentation configured to penetrate the bumped contact; and depositing a conductive layer in the indentation conzfigured to electrically engage the bumped contact.
Claim 26
Independent Claim
89 words
A method for fabricating an interconnect for a semiconductor component having a bumped contact comprising: providing a substrate; providing a resist comprising epoxy and a photoinitiator; depositing the resist on the substrate to form a resist layer; exposing the resist layer through a reticle; etching the resist layer to form an indentation therein sized to retain the bumped contact on the component and a projection in the indentation configured to penetrate the bumped contact; and depositing a conductive layer in the indentation conzfigured to electrically engage the bumped contact.
Claim 27
Dependent Claim
22 words
The method of claim 20 wherein the resist is formulated to form features having an aspect ratio (height/width) of at least 10.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-10 | 2004-04-10 | 2004-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-10 | 2008-04-10 | 2008-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-10 | 2012-04-10 | 2012-10-10 | $7700.00 | Window Closed / Lapsed |