US6040239A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Non-oxidizing touch contact interconnect for semiconductor test systems and method of fabrication
Assignee: Micron Technology Inc
•
Filing: 1997-08-22
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Granted: 2000-03-21
•
Expires: 2017-08-22
Abstract
Abstract An interconnect for testing semiconductor components including dice, wafers, and chip scale packages, is provided. The interconnect includes: a substrate; contact members formed on the substrate configured to make temporary electrical connections with the components; and conductors and bonding pads on the substrate for providing electrical paths to the contact members. The contact members, conductors and bonding pads can be covered with an electrolessly deposited barrier layer, and an electrolessly deposited non-oxidizing layer. The non-oxidizing layer on the contact members forms a touch contact surface for forming low resistance electrical connections with the contacts on the components. Preferred materials for the non-oxidizing layer include palladium, gold, tungsten and platinum. Also provided are a method for fabricating the interconnect, and test systems employing the interconnect.
Inventors
- 👤 Salman Akram
- 👤 Warren M. Farnworth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:28
CPC Classifications
G; G01; G01R; G01R1/00; G01R1/02; G01R1/06; G01R1/067; G01R1/06711; G01R1/06755; G01R1/06761; H; H10; H10W; H10W72/00; H10W72/01; H10W72/012; G01R1/04; G01R1/0408; G01R1/0433; G01R1/0441; G01R1/0466; G01R3/00; H10W72/20; H10W72/251; H10W72/90; H10W72/941; H10W72/9415
Claims Analysis
Total Claims: 57
Claim 1
Independent Claim
98 words
A method for fabricating an interconnect for testing a semiconductor component having a contact comprising: providing a substrate; forming a contact member on the substrate configured for contacting the contact on the component; forming a conductive layer on the contact member; electrolessly depositing a barrier layer on the conductive layer comprising a first material configured to prevent diffusion of the conductive layer; and electrolessly depositing a non-oxidizing layer on the barrier layer comprising a second material configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact on the component.
Claim 2
Independent Claim
98 words
A method for fabricating an interconnect for testing a semiconductor component having a contact comprising: providing a substrate; forming a contact member on the substrate configured for contacting the contact on the component; forming a conductive layer on the contact member; electrolessly depositing a barrier layer on the conductive layer comprising a first material configured to prevent diffusion of the conductive layer; and electrolessly depositing a non-oxidizing layer on the barrier layer comprising a second material configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact on the component.
Claim 3
Dependent Claim
40 words
The method of claim 1 further comprising forming a conductor and a bonding pad on the substrate in electrical communication with the conductive layer and electrolessly depositing the non-oxidizing layer on the bonding pad to provide a wire bondable surface.
Claim 4
Dependent Claim
23 words
The method of claim 1 wherein the first material comprises a material selected from the group consisting of nickel, zinc, chromium and palladium.
Claim 5
Dependent Claim
27 words
The method of claim 1 wherein the second material comprises a material selected from the group consisting of palladium, gold, tungsten, platinum, gold-platinum, silver-palladium, silver-platinum and palladium-gold.
Claim 6
Independent Claim
153 words
A method for fabricating an interconnect for testing a semiconductor component having a contact comprising: providing a substrate; forming a contact member on the substrate comprising a pillar configured for contacting the contact on the component; depositing a conductive layer on the pillar and on the substrate; patterning and etching the conductive layer leaving the pillar at least partially covered with a portion of the conductive layer, and forming a conductor and a bonding pad in electrical communication with the portion; electrolessly depositing a barrier layer on the conductive layer comprising a first material configured to prevent diffusion of the conductive layer; and electrolessly depositing a non-oxidizing layer on the barrier layer comprising a second material configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact on the component and a wire bondable surface on the bonding pad for wire bonding to the interconnect.
Claim 7
Independent Claim
153 words
A method for fabricating an interconnect for testing a semiconductor component having a contact comprising: providing a substrate; forming a contact member on the substrate comprising a pillar configured for contacting the contact on the component; depositing a conductive layer on the pillar and on the substrate; patterning and etching the conductive layer leaving the pillar at least partially covered with a portion of the conductive layer, and forming a conductor and a bonding pad in electrical communication with the portion; electrolessly depositing a barrier layer on the conductive layer comprising a first material configured to prevent diffusion of the conductive layer; and electrolessly depositing a non-oxidizing layer on the barrier layer comprising a second material configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact on the component and a wire bondable surface on the bonding pad for wire bonding to the interconnect.
Claim 8
Dependent Claim
19 words
The method of claim 5 wherein the pillar comprises a projection configured to penetrate the contact on the component.
Claim 9
Dependent Claim
23 words
The method of claim 5 wherein the first material comprises a material selected from the group consisting of nickel, zinc, chromium and palladium.
Claim 10
Dependent Claim
28 words
The method of claim 5 wherein the second material comprises a material selected from the group consisting of palladium, gold, tungsten, platinum, gold-platinum, silver-palladium, silver-platinum, palladium-gold and nickel-cobalt.
Claim 11
Dependent Claim
23 words
The method of claim 5 further comprising forming a projection on the pillar configured to penetrate the contact to a limited penetration depth.
Claim 12
Independent Claim
93 words
A method for fabricating an interconnect for testing a semiconductor component having a contact bump comprising: providing a substrate; forming a contact member on the substrate comprising an indentation configured to retain the contact bump; electrolessly depositing a barrier layer on the conductive layer comprising a first material configured to prevent diffusion of the conductive layer; and electrolessly depositing a non-oxidizing layer on the barrier layer comprising a second material configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact bump on the component.
Claim 13
Independent Claim
93 words
A method for fabricating an interconnect for testing a semiconductor component having a contact bump comprising: providing a substrate; forming a contact member on the substrate comprising an indentation configured to retain the contact bump; electrolessly depositing a barrier layer on the conductive layer comprising a first material configured to prevent diffusion of the conductive layer; and electrolessly depositing a non-oxidizing layer on the barrier layer comprising a second material configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact bump on the component.
Claim 14
Dependent Claim
40 words
The method of claim 10 further comprising forming a conductor and a bonding pad on the substrate in electrical communication with the conductive layer and electrolessly depositing the non-oxidizing layer on the bonding pad to provide a wire bondable surface.
Claim 15
Dependent Claim
23 words
The method of claim 10 wherein the first material comprises a material selected from the group consisting of nickel, zinc, chromium and palladium.
Claim 16
Dependent Claim
28 words
The method of claim 10 wherein the second material comprises a material selected from the group consisting of palladium, gold, tungsten, platinum, gold-platinum, silver-palladium, silver-platinum, palladium-gold and nickel-cobalt.
Claim 17
Dependent Claim
21 words
The method of claim 10 wherein the indentation comprises a stepped surface with an edge configured to penetrate the contact bump.
Claim 18
Independent Claim
117 words
A method for fabricating an interconnect for testing a semiconductor component having a contact comprising: providing a substrate; forming a contact member on the substrate configured for contacting the contact on the component and comprising a conductive layer; electrolessly depositing a barrier layer on the conductive layer by submerging the substrate in a first solution, the barrier layer comprising a first material configured to prevent diffusion of the conductive layer; and electrolessly depositing a non-oxidizing layer on the barrier layer by submerging the substrate in a second solution, the non-oxidizing layer comprising a second material configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact on the component.
Claim 19
Independent Claim
117 words
A method for fabricating an interconnect for testing a semiconductor component having a contact comprising: providing a substrate; forming a contact member on the substrate configured for contacting the contact on the component and comprising a conductive layer; electrolessly depositing a barrier layer on the conductive layer by submerging the substrate in a first solution, the barrier layer comprising a first material configured to prevent diffusion of the conductive layer; and electrolessly depositing a non-oxidizing layer on the barrier layer by submerging the substrate in a second solution, the non-oxidizing layer comprising a second material configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact on the component.
Claim 20
Dependent Claim
17 words
The method of claim 15 wherein the first material comprises nickel and the second material comprises palladium.
Claim 21
Dependent Claim
20 words
The method of claim 15 further comprising forming a conductor on the substrate in electrical communication with the conductive layer.
Claim 22
Dependent Claim
21 words
The method of claim 17 further comprising electrolessly depositing the non-oxidizing layer on the conductor to provide a wire bonding surface.
Claim 23
Dependent Claim
18 words
The method of claim 15 wherein the contact member comprises a pillar comprising a portion of the substrate.
Claim 24
Dependent Claim
20 words
The method of claim 15 wherein the contact member comprises an indentation in the substrate configured to retain the contact.
Claim 25
Dependent Claim
24 words
The method of claim 15 wherein the contact member comprises a stepped indentation in the substrate comprising an edge configured to penetrate the contact.
Claim 26
Dependent Claim
17 words
The method of claim 15 wherein the first solution comprises nickel chloride, sodium hydroxyacetate, and sodium hypophosphate.
Claim 27
Dependent Claim
15 words
The method of claim 15 wherein the second solution comprises palladium chloride and sodium hypophosphate.
Claim 28
Dependent Claim
91 words
An interconnect for testing a semiconductor component having a contact comprising: a substrate; a contact member on the substrate configured to electrically engage a contact on the component and comprising a conductive layer; a barrier layer on the conductive layer comprising a first material configured to prevent diffusion of the conductive layer and provide an adhesive surface; and a non-oxidizing layer on the barrier layer comprising a second material configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact on the component.
Claim 29
Dependent Claim
91 words
An interconnect for testing a semiconductor component having a contact comprising: a substrate; a contact member on the substrate configured to electrically engage a contact on the component and comprising a conductive layer; a barrier layer on the conductive layer comprising a first material configured to prevent diffusion of the conductive layer and provide an adhesive surface; and a non-oxidizing layer on the barrier layer comprising a second material configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact on the component.
Claim 30
Dependent Claim
33 words
The interconnect of claim 24 further comprising a bonding pad on the substrate in electrical communication with the conductive layer and at least partially covered by the barrier layer and the bonding layer.
Claim 31
Dependent Claim
29 words
The interconnect of claim 24 further comprising a conductor in electrical communication with the conductive layer and at least partially covered by the barrier layer and the bonding layer.
Claim 32
Dependent Claim
23 words
The interconnect of claim 24 wherein the contact member comprises a pillar on the substrate at least partially covered by the conductive layer.
Claim 33
Dependent Claim
23 words
The interconnect of claim 24 wherein the contact member comprises an indentation in the substrate at least partially covered by the conductive layer.
Claim 34
Dependent Claim
111 words
An interconnect for testing a semiconductor component having a contact comprising: a substrate; a contact member on the substrate configured for contacting the contact on the component; a conductive layer on the substrate and the contact member comprising a portion at least partially covering the contact member, a conductor configured to provide an electrical path to the contact member, and a bonding pad, and a non-oxidizing layer on the conductive layer comprising a metal configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact on the component, and a wire bondable surface on the bonding pad for wire bonding to the interconnect.
Claim 35
Dependent Claim
111 words
An interconnect for testing a semiconductor component having a contact comprising: a substrate; a contact member on the substrate configured for contacting the contact on the component; a conductive layer on the substrate and the contact member comprising a portion at least partially covering the contact member, a conductor configured to provide an electrical path to the contact member, and a bonding pad, and a non-oxidizing layer on the conductive layer comprising a metal configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact on the component, and a wire bondable surface on the bonding pad for wire bonding to the interconnect.
Claim 36
Dependent Claim
32 words
The interconnect of claim 29 further comprising a barrier layer between the conductive layer and the non-oxidizing layer comprising a material selected from the group consisting of nickel, zinc, chromium and palladium.
Claim 37
Dependent Claim
27 words
The interconnect of claim 29 wherein the metal comprises a material selected from the group consisting of palladium, gold, tungsten, platinum, gold-platinum, silver-palladium, silver-platinum, palladium-gold and nickel-cobalt.
Claim 38
Dependent Claim
23 words
The interconnect of claim 29 wherein the contact member comprises a raised pillar with at least one projection configured to penetrate the contact.
Claim 39
Dependent Claim
17 words
The interconnect of claim 29 wherein the contact member comprises an indentation configured to retain the contact.
Claim 40
Dependent Claim
21 words
The interconnect of claim 29 wherein the contact member comprises a stepped indentation with an edge configured to penetrate the contact.
Claim 41
Dependent Claim
113 words
An interconnect for testing a semiconductor component having a contact bump comprising: a substrate; a contact member on the substrate comprising an indentation configured to retain and electrically engage the contact bump; a conductive layer on the substrate and the contact member covering at least a portion of the indentation and defining a conductor for providing an electrical path to the contact member, and a bonding pad for the conductor; and a non-oxidizing layer on the conductive layer comprising a metal configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact bump on the component, and a wire bondable surface on the bonding pad.
Claim 42
Dependent Claim
113 words
An interconnect for testing a semiconductor component having a contact bump comprising: a substrate; a contact member on the substrate comprising an indentation configured to retain and electrically engage the contact bump; a conductive layer on the substrate and the contact member covering at least a portion of the indentation and defining a conductor for providing an electrical path to the contact member, and a bonding pad for the conductor; and a non-oxidizing layer on the conductive layer comprising a metal configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact bump on the component, and a wire bondable surface on the bonding pad.
Claim 43
Dependent Claim
21 words
The interconnect of claim 35 wherein the indentation comprises an inverted pyramid with an edge configured to penetrate the contact bump.
Claim 44
Dependent Claim
28 words
The interconnect of claim 35 wherein the non-oxidizing layer comprises a material selected from the group consisting of palladium, gold, tungsten, platinum, gold-platinum, silver-palladium, silver-platinum, palladium-gold and nickel-cobalt.
Claim 45
Dependent Claim
18 words
The interconnect of claim 35 wherein the substrate comprises a stepped edge wherein the bonding pad is located.
Claim 46
Dependent Claim
124 words
An interconnect for testing a semiconductor component having a contact comprising: a substrate; a contact member on the substrate comprising a pillar and a penetrating projection configured to penetrate the contact on the component to a limited penetration depth; a conductive layer on the substrate covering the projection and at least a portion of the pillar, and defining a conductor for the contact member and a bonding pad for the conductor; a barrier layer on the conductive layer comprising a first material configured to prevent diffusion of the conductive layer; and a non-oxidizing layer on the barrier layer comprising a second material configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact on the component.
Claim 47
Dependent Claim
124 words
An interconnect for testing a semiconductor component having a contact comprising: a substrate; a contact member on the substrate comprising a pillar and a penetrating projection configured to penetrate the contact on the component to a limited penetration depth; a conductive layer on the substrate covering the projection and at least a portion of the pillar, and defining a conductor for the contact member and a bonding pad for the conductor; a barrier layer on the conductive layer comprising a first material configured to prevent diffusion of the conductive layer; and a non-oxidizing layer on the barrier layer comprising a second material configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact on the component.
Claim 48
Dependent Claim
28 words
The interconnect of claim 39 wherein the non-oxidizing layer comprises a material selected from the group consisting of palladium, gold, tungsten, platinum, gold-platinum, silver-palladium, silver-platinum, palladium-gold and nickel-cobalt.
Claim 49
Dependent Claim
18 words
The interconnect of claim 39 wherein the substrate comprises a stepped edge wherein the bonding pad is located.
Claim 50
Independent Claim
128 words
A system for testing a semiconductor component having a contact comprising: test circuitry; a carrier configured to contain the component comprising an external contact in electrical communication with the test circuitry; and an interconnect on the carrier comprising: a substrate a contact member on the substrate configured to electrically engage the contact on the component; a conductive layer on the substrate and the contact member comprising a conductor in electrical communication with the external contact; a barrier layer on the conductive layer comprising a first material configured to prevent diffusion of the conductive layer; and a non-oxidizing layer on the barrier layer comprising a second material configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact on the component.
Claim 51
Independent Claim
128 words
A system for testing a semiconductor component having a contact comprising: test circuitry; a carrier configured to contain the component comprising an external contact in electrical communication with the test circuitry; and an interconnect on the carrier comprising: a substrate a contact member on the substrate configured to electrically engage the contact on the component; a conductive layer on the substrate and the contact member comprising a conductor in electrical communication with the external contact; a barrier layer on the conductive layer comprising a first material configured to prevent diffusion of the conductive layer; and a non-oxidizing layer on the barrier layer comprising a second material configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact on the component.
Claim 52
Dependent Claim
27 words
The system of claim 42 wherein the second material comprises a material selected from the group consisting of palladium, gold, tungsten, platinum, gold-platinum, silver-palladium, silver-platinum and palladium-gold.
Claim 53
Dependent Claim
23 words
The system of claim 42 wherein the component comprises an element selected from the group consisting of bare dice and chip scale packages.
Claim 54
Independent Claim
121 words
A system for testing a semiconductor wafer having a contact comprising: test circuitry; a wafer handler in electrical communication with the test circuitry; and an interconnect on the wafer handler comprising: a substrate a contact member on the substrate configured to electrically engage the contact on the wafer; a conductive layer on the substrate and the contact member comprising a conductor in electrical communication with the test circuitry; a barrier layer on the conductive layer comprising a first material configured to prevent diffusion of the conductive layer; and a non-oxidizing layer on the barrier layer comprising a second material configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact on the component.
Claim 55
Independent Claim
121 words
A system for testing a semiconductor wafer having a contact comprising: test circuitry; a wafer handler in electrical communication with the test circuitry; and an interconnect on the wafer handler comprising: a substrate a contact member on the substrate configured to electrically engage the contact on the wafer; a conductive layer on the substrate and the contact member comprising a conductor in electrical communication with the test circuitry; a barrier layer on the conductive layer comprising a first material configured to prevent diffusion of the conductive layer; and a non-oxidizing layer on the barrier layer comprising a second material configured to provide a touch surface on the contact member for making a temporary electrical connection with the contact on the component.
Claim 56
Dependent Claim
28 words
The system of claim 45 wherein the second material comprises a material selected from the group consisting of palladium, gold, tungsten, platinum, gold-platinum, silver-palladium, silver-platinum, palladium-gold and nickel-cobalt.
Claim 57
Dependent Claim
23 words
The system of claim 45 further comprising a flex circuit bonded to the conductor and to a bonding site on the wafer handler.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-21 | 2003-09-20 | 2004-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-21 | 2007-09-20 | 2008-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-21 | 2011-09-20 | 2012-03-21 | $7700.00 | Window Closed / Lapsed |