US5592736A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabricating an interconnect for testing unpackaged semiconductor dice having raised bond pads
Assignee: Micron Technology Inc
•
Filing: 1995-01-05
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Granted: 1997-01-14
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Expires: 2015-01-05
Abstract
Abstract A method for testing unpackaged semiconductor dice having raised contact locations (e.g., bumped bond pads) and a method for forming an interconnect suitable for testing this type of dice are provided. The interconnect includes a substrate having contact members comprising an array of sharpened elongated projections. The sharpened projections are formed by etching (or by growing and removing an oxide) through exposed areas of a mask. A conductive layer is formed on the sharpened projections and is in electrical communication with conductive traces formed on the substrate. The conductive layer can be formed as a layer of metal, as a stack of metals including a barrier metal, as a silicide, or as a layer of polysilicon. For testing an unpackaged die, the interconnect and die are placed in a temporary carrier and biased together. The sharpened projections are adapted to penetrate the contact location on the die to a limited penetration depth to establish an ohmic connection while minimizing damage to the contact location.
Inventors
- 👤 Salman Akram
- 👤 Warren M. Farnworth
- 👤 Alan G. Wood
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 11:59
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/40; H05K3/4007; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; H05K2201/00; H05K2201/03; H05K2201/0332; H05K2201/0364; H05K2201/0367; H05K2201/0373; H05K2201/09; H05K2201/09009; H05K2201/09045; H05K3/30; H05K3/32; H05K3/325; H10; H10W; H10W72/00; H10W72/071; H10W72/072; H10W72/20; H10W72/241; H10W72/29; H10W72/90; H10W72/931; H10W72/934; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T29/49146
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
92 words
A method for fabricating an interconnect suitable for establishing a temporary electrical connection with a semiconductor die having a raised contact location, said method comprising: providing a substrate; forming a contact member on the substrate including a sharpened projection, said sharpened projection comprising an elongated blade configured to penetrate into the raised contact location to a limited penetration depth; forming an insulating layer on the substrate and sharpened projection; forming a conductive layer on the sharpened projection; and forming a conductive trace on the substrate in electrical communication with the conductive layer.
Claim 2
Independent Claim
92 words
A method for fabricating an interconnect suitable for establishing a temporary electrical connection with a semiconductor die having a raised contact location, said method comprising: providing a substrate; forming a contact member on the substrate including a sharpened projection, said sharpened projection comprising an elongated blade configured to penetrate into the raised contact location to a limited penetration depth; forming an insulating layer on the substrate and sharpened projection; forming a conductive layer on the sharpened projection; and forming a conductive trace on the substrate in electrical communication with the conductive layer.
Claim 3
Dependent Claim
18 words
The method as claimed in claim 1 and wherein the contact member includes a plurality of sharpened projections.
Claim 4
Dependent Claim
18 words
The method as claimed in claim 1 and wherein the sharpened projection is formed by an etching process.
Claim 5
Dependent Claim
16 words
The method as claimed in claim 3 and wherein the etching process is an anisotropic etch.
Claim 6
Dependent Claim
16 words
The method as claimed in claim 3 and wherein the etching process is an isotropic etch.
Claim 7
Dependent Claim
18 words
The method as claimed in claim 1 and wherein the sharpened projection is formed by an oxidation process.
Claim 8
Dependent Claim
19 words
The method as claimed in claim 1 and wherein the conductive layer is formed as a stack of metals.
Claim 9
Dependent Claim
18 words
The method as claimed in claim 1 and wherein the conductive layer is formed of a metal silicide.
Claim 10
Dependent Claim
36 words
The method as claimed in claim 1 and wherein the conductive layer and the conductive trace are formed by depositing a metal layer on the substrate, patterning the metal layer and then etching the metal layer.
Claim 11
Dependent Claim
30 words
The method as claimed in claim 1 and wherein the sharpened projection is formed in an indentation formed in the substrate said indentation configured to retain the raised contact location.
Claim 12
Dependent Claim
27 words
The method as claimed in claim 1 and wherein the contact member is formed with an indentation in the substrate configured to retain the raised contact location.
Claim 13
Independent Claim
92 words
A method for fabricating an interconnect suitable for establishing a temporary electrical connection with a semiconductor die having a raised contact location, said method comprising: providing a substrate; forming an elongated sharpened projection on the substrate, said sharpened projection dimensioned to penetrate into the raised contact location to a limited penetration depth; forming an insulating layer over the substrate and sharpened projection; forming a metal silicide conductive layer on the insulating layer and over the sharpened projection; and forming a conductive trace on the substrate in electrical communication with the conductive layer.
Claim 14
Independent Claim
92 words
A method for fabricating an interconnect suitable for establishing a temporary electrical connection with a semiconductor die having a raised contact location, said method comprising: providing a substrate; forming an elongated sharpened projection on the substrate, said sharpened projection dimensioned to penetrate into the raised contact location to a limited penetration depth; forming an insulating layer over the substrate and sharpened projection; forming a metal silicide conductive layer on the insulating layer and over the sharpened projection; and forming a conductive trace on the substrate in electrical communication with the conductive layer.
Claim 15
Dependent Claim
27 words
The method as claimed in claim 12 and wherein the conductive trace is formed by depositing a conductive metal on the substrate and etching the conductive metal.
Claim 16
Dependent Claim
67 words
The method as claimed in claim 12 and wherein the conductive layer is formed by forming a silicon containing layer on the substrate, depositing a metal layer on the silicon containing layer, reacting the metal layer and silicon containing layer to form the metal silicide layer, and then etching an unreacted portion of the metal layer and the silicon containing layer selective to the metal silicide layer.
Claim 17
Dependent Claim
24 words
The method as claimed in claim 12 and further comprising annealing the metal silicide layer to lower a resistivity of the metal silicide layer.
Claim 18
Dependent Claim
20 words
The method as claimed in claim 12 and wherein the sharpened projection is formed in an indentation in the substrate.
Claim 19
Dependent Claim
26 words
The method as claimed in claim 16 and wherein the indentation is formed by etching the substrate in a shape for retaining the raised contact location.
Claim 20
Dependent Claim
23 words
The method as claimed in claim 12 and further comprising forming an array of sharpened projections for each contact location on the die.
Claim 21
Dependent Claim
28 words
The method as claimed in claim 12 and wherein the conductive layer is formed of a first metal and the conductive trace is formed of a second metal.
Claim 22
Dependent Claim
20 words
The method as claimed in claim 12 and wherein the raised contact location on the die is a conductive bump.
Claim 23
Dependent Claim
27 words
The method as claimed in claim 12 and wherein the substrate is formed of a material selected from the group consisting of silicon, silicon-on-sapphire, silicon-on-glass and germanium.
Claim 24
Dependent Claim
27 words
The method as claimed in claim 12 and wherein the sharpened projection is formed by an anisotropic etch process as an elongated blade having a sharp edge.
Claim 25
Dependent Claim
22 words
The method as claimed in claim 12 and wherein the sharpened projection is formed by an isotropic etch process with radiused sidewalls.
Claim 26
Dependent Claim
30 words
The method as claimed in claim 12 and wherein the sharpened projection is formed by an anisotropic etch and have a truncated pyramidal cross section with a flat tip portion.
Claim 27
Dependent Claim
32 words
The method as claimed in claim 12 and wherein a plurality of sharpened projections are formed by an anisotropic etch in a saw tooth array with base portions that abut one another.
Claim 28
Independent Claim
80 words
A method for fabricating an interconnect for a semiconductor die having a raised contact location, said method comprising: providing a substrate; forming a contact member on the substrate including a projection configured to penetrate into the raised contact location to a limited penetration depth; forming an insulating layer on the substrate and projection; forming a conductive layer comprising a metal silicide on the insulating layer; and forming a conductive trace on the substrate in electrical communication with the conductive layer.
Claim 29
Independent Claim
80 words
A method for fabricating an interconnect for a semiconductor die having a raised contact location, said method comprising: providing a substrate; forming a contact member on the substrate including a projection configured to penetrate into the raised contact location to a limited penetration depth; forming an insulating layer on the substrate and projection; forming a conductive layer comprising a metal silicide on the insulating layer; and forming a conductive trace on the substrate in electrical communication with the conductive layer.
Claim 30
Dependent Claim
22 words
The method as claimed in claim 26 and wherein the contact member includes an indentation sized for retaining the raised contact location.
Claim 31
Dependent Claim
16 words
The method as claimed in claim 27 and wherein the projection is formed within the indentation.
Claim 32
Independent Claim
94 words
A method for fabricating an interconnect for a semiconductor die having a raised contact location, said method comprising: providing a substrate; forming a contact member on the substrate including a projection configured to penetrate into the raised contact location to a limited penetration depth; forming an insulating layer over the substrate and projection; forming a conductive layer on the insulating layer and over the sharpened projection, said conductive layer comprising a first metal layer and a second metal layer; and forming a conductive trace on the substrate in electrical communication with the conductive layer.
Claim 33
Independent Claim
94 words
A method for fabricating an interconnect for a semiconductor die having a raised contact location, said method comprising: providing a substrate; forming a contact member on the substrate including a projection configured to penetrate into the raised contact location to a limited penetration depth; forming an insulating layer over the substrate and projection; forming a conductive layer on the insulating layer and over the sharpened projection, said conductive layer comprising a first metal layer and a second metal layer; and forming a conductive trace on the substrate in electrical communication with the conductive layer.
Claim 34
Dependent Claim
38 words
The method as claimed in claim 29 and wherein the conductive layer is formed by depositing the first metal layer and the second metal layer on the substrate and then etching through the first and second metal layers.
Claim 35
Dependent Claim
30 words
The method as claimed in claim 29 and wherein the first metal layer is formed as a barrier layer and the second metal layer is formed as a bonding layer.
Claim 36
Dependent Claim
23 words
The method as claimed in claim 29 and wherein the first metal layer is selected from the group consisting of platinum and titanium.
Claim 37
Independent Claim
86 words
A method for fabricating an interconnect for a semiconductor die having a raised contact location, said method comprising: providing a substrate; forming a contact member on the substrate including a projection configured to penetrate into the raised contact location to a limited penetration depth; forming an insulating layer over the substrate and projection; forming a conductive layer on the insulating layer and over the sharpened projection, said conductive layer comprising polysilicon; and forming a conductive trace on the substrate in electrical communication with the conductive layer.
Claim 38
Independent Claim
86 words
A method for fabricating an interconnect for a semiconductor die having a raised contact location, said method comprising: providing a substrate; forming a contact member on the substrate including a projection configured to penetrate into the raised contact location to a limited penetration depth; forming an insulating layer over the substrate and projection; forming a conductive layer on the insulating layer and over the sharpened projection, said conductive layer comprising polysilicon; and forming a conductive trace on the substrate in electrical communication with the conductive layer.
Claim 39
Independent Claim
67 words
A method for fabricating an interconnect for a semiconductor die having a raised contact location, said method comprising: providing a substrate; forming a contact member on the substrate including a projection comprising an elongated sharpened blade configured to penetrate into the raised contact location to a limited penetration depth; forming an insulating layer on the substrate and projection; and forming a conductive layer on the insulating layer.
Claim 40
Independent Claim
67 words
A method for fabricating an interconnect for a semiconductor die having a raised contact location, said method comprising: providing a substrate; forming a contact member on the substrate including a projection comprising an elongated sharpened blade configured to penetrate into the raised contact location to a limited penetration depth; forming an insulating layer on the substrate and projection; and forming a conductive layer on the insulating layer.
Claim 41
Dependent Claim
16 words
The method as claimed in claim 34 and wherein the conductive layer is a metal silicide.
Claim 42
Dependent Claim
14 words
The method as claimed in claim 34 and wherein the conductive layer is polysilicon.
Claim 43
Dependent Claim
16 words
The method as claimed in claim 34 and wherein the conductive layer is a bi-metal stack.
Claim 44
Dependent Claim
27 words
The method as claimed in claim 34 and wherein the contact member includes an indentation formed in the substrate and configured to retain the raised contact location.
References Cited (Backward Citations)
US4585991A
Cited
US4952272A
Cited
US4937653A
Cited
US4899107A
Cited
US5073117A
Cited
JPH0369131A
Cited
JPH0369137A
Cited
US4943343A
Cited
US5207585A
Cited
US5177438A
Cited
US5177439A
Cited
US5323035A
Cited
US5326428A
Cited
US5419807A
Cited
US5483741A
Cited
US5478779A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-14 | 2000-07-15 | 2001-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-14 | 2004-07-15 | 2005-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-14 | 2008-07-15 | 2009-01-14 | $7700.00 | Window Closed / Lapsed |