Patent US4875971A successfully refreshed from Google Patents.
US4875971A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of customized integrated circuits
Assignee: Elron Electronic Industries Ltd
•
Filing: 1988-03-23
•
Granted: 1989-10-24
•
Expires: 2008-03-23
Abstract
Abstract A technique for production of customized integrated circuits comprising the steps of providing an integrated circuit blank having at least first and second metal layers including portions arranged for selectable removal to provide desired customization of said integrated circuit blank, and thereafter etching at least said first metal layer to customize said integrated circuit blank.
Inventors
- 👤 Zvi Orbach
- 👤 Meir I. Janai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 05:45
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/90; H10P; H10P50/00; H10P76/00; H10P76/20; H10P76/204; H10W20/01; H10W20/031; H10W20/067; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12535; Y10T428/12542; Y10T428/12611; Y10T428/12618; Y10T428/24; Y10T428/24802; Y10T428/24917
Claims Analysis
Total Claims: 57
Claim 1
Independent Claim
83 words
A technique for production of customized integrated circuit gate arrays comprising the steps of: providing an integrated circuit gate array blank having at least a first metal layer and a second metal layer formed over said first metal layer and separated therefrom by an insulator, said first and second metal layers including portions arranged for selectable removal to provide desired customization of said integrated circuit blank; and thereafter etching at least said first metal layer to customize said integrated circuit gate array blank.
Claim 2
Dependent Claim
83 words
A technique for production of customized integrated circuit gate arrays comprising the steps of: providing an integrated circuit gate array blank having at least a first metal layer and a second metal layer formed over said first metal layer and separated therefrom by an insulator, said first and second metal layers including portions arranged for selectable removal to provide desired customization of said integrated circuit blank; and thereafter etching at least said first metal layer to customize said integrated circuit gate array blank.
Claim 3
Dependent Claim
28 words
A technique according to claim 1 and wherein said etching step comprises simultaneous etching of all desired locations on each of said at least said first metal layer.
Claim 4
Dependent Claim
29 words
A technique according to claim 1 and wherein said etching step comprises the step of simultaneously etching said first and second metal layers to customize said integrated circuit blank.
Claim 5
Dependent Claim
92 words
A technique for production of customized integrated circuit gate arrays comprising the steps of: providing an integrated circuit gate array blank having at least one metal layer; etching said at least one metal layer to define a pattern of conductors including portions arranged for selectable removal; providing a passivation layer over said at least one metal layer; and etching said at least one metal layer a second time to customize said integrated circuit gate array blank by selectable removal of said at least one metal layer at selected ones of said portions.
Claim 6
Dependent Claim
92 words
A technique for production of customized integrated circuit gate arrays comprising the steps of: providing an integrated circuit gate array blank having at least one metal layer; etching said at least one metal layer to define a pattern of conductors including portions arranged for selectable removal; providing a passivation layer over said at least one metal layer; and etching said at least one metal layer a second time to customize said integrated circuit gate array blank by selectable removal of said at least one metal layer at selected ones of said portions.
Claim 7
Dependent Claim
37 words
A technique according to claim 4 and wherein said step of etching said at least one metal layer a second time comprises simultaneous etching of all desired locations on each of said at least one metal layers.
Claim 8
Dependent Claim
35 words
A technique according to claim 4 and also comprising the step of depositing a non-metallic layer over said at least one metal layer prior to etching said at least one metal layer a second time.
Claim 9
Dependent Claim
37 words
A technique according to claim 6 and wherein said step of etching said at least one metal layer a second time comprises simultaneous etching of all desired locations on each of said at least one metal layers.
Claim 10
Dependent Claim
50 words
A technique according to claim 1 and wherein said step of providing includes the step of forming an etch resistant layer over said integrated circuit blank using a mask which defines etchable windows over all portions of said first metal layer sought to be removed in a predetermined customization configuration.
Claim 11
Dependent Claim
52 words
A technique according to claim 4 and wherein said step of providing includes the step of forming an etch resistant layer over said integrated circuit blank using a mask which defines etchable windows over all portions of said at least one metal layer sought to be removed in a predetermined customization configuration.
Claim 12
Dependent Claim
57 words
A technique according to claim 1 and also comprising the step of forming an etch resistant layer over said integrated circuit blank using an etchable window mask which defines etchable windows over all portions of at least one of said first and second metal layers sought to be removed in a predetermined customization configuration, prior to etching.
Claim 13
Dependent Claim
53 words
A technique according to claim 4 and also comprising the step of forming an etch resistant layer over said integrated circuit blank using an etchable window mask which defines etchable windows over all portions of said at least one metal layer sought to be removed in a predetermined customization configuration, prior to etching.
Claim 14
Dependent Claim
56 words
A technique according to claim 1 and also comprising the step of forming an etch resistant layer over said integrated circuit blank using an etchable window mask to define etchable windows over portions of at least one of said first and second metal layers which could be removed in a predetermined customization configuration, prior to etching.
Claim 15
Dependent Claim
52 words
A technique according to claim 4 and also comprising the step of forming an etch resistant layer over said integrated circuit blank using an etchable window mask to define etchable windows over portions of said at least one metal layer which could be removed in a predetermined customization configuration, prior to etching.
Claim 16
Dependent Claim
29 words
A technique according to claim 8 and wherein said step of forming an etch resistant layer comprises the step of forming an insulating layer over said first metal layer.
Claim 17
Dependent Claim
29 words
A technique according to claim 10 and wherein said step of forming an etch resistant layer comprises the step of forming an insulating layer over said first metal layer.
Claim 18
Dependent Claim
29 words
A technique according to claim 12 and wherein said step of forming an etch resistant layer comprises the step of forming an insulating layer over said first metal layer.
Claim 19
Dependent Claim
31 words
A technique according to claim 9 and wherein said step of forming an etch resistant layer comprises the step of forming an insulating layer over said at least one metal layer.
Claim 20
Dependent Claim
31 words
A technique according to claim 11 and wherein said step of forming an etch resistant layer comprises the step of forming an insulating layer over said at least one metal layer.
Claim 21
Dependent Claim
31 words
A technique according to claim 13 and wherein said step of forming an etch resistant layer comprises the step of forming an insulating layer over said at least one metal layer.
Claim 22
Dependent Claim
32 words
A technique according to claim 8 and wherein said step of forming an etch resistant layer also comprises the step of forming a photoresist layer over at least said second metal layer.
Claim 23
Dependent Claim
32 words
A technique according to claim 10 and wherein said step of forming an etch resistant layer also comprises the step of forming a photoresist layer over at least said second metal layer.
Claim 24
Dependent Claim
32 words
A technique according to claim 12 and wherein said step of forming an etch resistant layer also comprises the step of forming a photoresist layer over at least said second metal layer.
Claim 25
Dependent Claim
31 words
A technique according to claim 9 wherein said step of forming an etch resistant layer also comprises the step of forming a photoresist layer over said at least one metal layer.
Claim 26
Dependent Claim
32 words
A technique according to claim 11 and wherein said step of forming an etch resistant layer also comprises the step of forming a photoresist layer over said at least one metal layer.
Claim 27
Dependent Claim
32 words
A technique according to claim 13 and wherein said step of forming an etch resistant layer also comprises the step of forming a photoresist layer over said at least one metal layer.
Claim 28
Dependent Claim
56 words
A technique according to claim 2 and wherein said simultaneous etching step comprises the step of etching said at least first and second metal layers a second time to customize said integrated circuit blank by selectable removal of said at least first and second metal layers at selected ones of said portions arranged for selected removal.
Claim 29
Dependent Claim
56 words
A technique according to claim 3 and wherein said simultaneous etching step comprises the step of etching said at least first and second metal layers a second time to customize said integrated circuit blank by selectable removal of said at least first and second metal layers at selected ones of said portions arranged for selectable removal.
Claim 30
Dependent Claim
27 words
A technique according to claim 1 and wherein said etching step for customizing said integrated circuit blank comprises the step of generating at least one customizing mask.
Claim 31
Dependent Claim
27 words
A technique according to claim 4 and wherein said etching step for customizing said integrated circuit blank comprises the step of generating at least one customizing mask.
Claim 32
Dependent Claim
27 words
A technique according to claim 28 and wherein said step of generating at least one customizing mask comprises the step of laser irradiation of a mask material.
Claim 33
Dependent Claim
27 words
A technique according to claim 29 and wherein said step of generating at least one customizing mask comprises the step of laser irradiation of a mask material.
Claim 34
Dependent Claim
49 words
A technique according to claim 12 and wherein said etching step for customizing said integrated circuit blank comprises the step of generating at least one customizing mask and wherein said step of generating at least one customizing mask comprises the step of laser irradiation of said etchable window mask.
Claim 35
Dependent Claim
49 words
A technique according to claim 13 and wherein said etching step for customizing said integrated circuit blank comprises the step of generating at least one customizing mask and wherein said step of generating at least one customizing mask comprises the step of laser irradiation of said etchable window mask.
Claim 36
Dependent Claim
14 words
A technique according to claim 8 and wherein said etch resistant layer comprises photoresist.
Claim 37
Dependent Claim
14 words
A technique according to claim 9 and wherein said etch resistant layer comprises photoresist.
Claim 38
Dependent Claim
14 words
A technique according to claim 10 and wherein said etch resistant layer comprises photoresist.
Claim 39
Dependent Claim
14 words
A technique according to claim 11 and wherein said etch resistant layer comprises photoresist.
Claim 40
Dependent Claim
14 words
A technique according to claim 12 and wherein said etch resistant layer comprises photoresist.
Claim 41
Dependent Claim
14 words
A technique according to claim 13 and wherein said etch resistant layer comprises photoresist.
Claim 42
Dependent Claim
50 words
A technique according to claim 12 and wherein said etching step for customizing said integrated circuit blank comprises the step of generating at least one customizing mask and wherein said step of generating at least one customizing mask comprises the step of ion beam irradiation of said etchable window mask.
Claim 43
Dependent Claim
50 words
A technique according to claim 13 and wherein said etching step for customizing said integrated circuit blank comprises the step of generating at least one customizing mask and wherein said step of generating at least one customizing mask comprises the step of ion beam irradiation of said etchable window mask.
Claim 44
Dependent Claim
27 words
A technique according to claim 1 and wherein said first metal layer is a metal I layer and said second metal layer is a metal II layer.
Claim 45
Dependent Claim
78 words
A semiconductor device formed in accordance with a technique comprising the steps of: providing an integrated circuit blank having at least a first metal layer and a second metal layer formed over said first metal layer and separated therefrom by an insulator, said first and second metal layers including portions arranged for selectable removal to provide desired customization of said integrated circuit blank; and thereafter etching at least said first metal layer to customize said integrated circuit blank.
Claim 46
Dependent Claim
78 words
A semiconductor device formed in accordance with a technique comprising the steps of: providing an integrated circuit blank having at least a first metal layer and a second metal layer formed over said first metal layer and separated therefrom by an insulator, said first and second metal layers including portions arranged for selectable removal to provide desired customization of said integrated circuit blank; and thereafter etching at least said first metal layer to customize said integrated circuit blank.
Claim 47
Dependent Claim
84 words
An integrated circuit gate array formed in accordance with a technique comprising the steps of: providing an integrated circuit gate array blank having at least a first metal layer and a second metal layer formed over said first metal layer and separated therefrom by an insulator, said first and second metal layers including portions arranged for selectable removal to provide desired customization of said integrated circuit blank; and thereafter etching at least said first metal layer to customize said integrated circuit gate array blank.
Claim 48
Dependent Claim
84 words
An integrated circuit gate array formed in accordance with a technique comprising the steps of: providing an integrated circuit gate array blank having at least a first metal layer and a second metal layer formed over said first metal layer and separated therefrom by an insulator, said first and second metal layers including portions arranged for selectable removal to provide desired customization of said integrated circuit blank; and thereafter etching at least said first metal layer to customize said integrated circuit gate array blank.
Claim 49
Dependent Claim
93 words
An integrated circuit gate array formed in accordance with a technique comprising the steps of: providing an integrated circuit gate array blank having at least one metal layer; etching said at least one metal layer to define a pattern of conductors including portions arranged for selectable removal; providing a passivation layer over said at least one metal layer; and etching said at least one metal layer a second time to customize said integrated circuit gate array blank by selectable removal of said at least one metal layer at selected ones of said portions.
Claim 50
Dependent Claim
93 words
An integrated circuit gate array formed in accordance with a technique comprising the steps of: providing an integrated circuit gate array blank having at least one metal layer; etching said at least one metal layer to define a pattern of conductors including portions arranged for selectable removal; providing a passivation layer over said at least one metal layer; and etching said at least one metal layer a second time to customize said integrated circuit gate array blank by selectable removal of said at least one metal layer at selected ones of said portions.
Claim 51
Dependent Claim
87 words
A semiconductor device formed in accordance with a technique comprising the steps of: providing an integrated circuit blank having at least one metal layer; etching said at least one metal layer to define a pattern of conductors including portions arranged for selectable removal; providing a passivation layer over said at least one metal layer; and etching said at least one metal layer a second time to customize said integrated circuit blank by selectable removal of said at least one metal layer at selected ones of said portions.
Claim 52
Dependent Claim
87 words
A semiconductor device formed in accordance with a technique comprising the steps of: providing an integrated circuit blank having at least one metal layer; etching said at least one metal layer to define a pattern of conductors including portions arranged for selectable removal; providing a passivation layer over said at least one metal layer; and etching said at least one metal layer a second time to customize said integrated circuit blank by selectable removal of said at least one metal layer at selected ones of said portions.
Claim 53
Dependent Claim
68 words
A semiconductor device comprising a gate array blank including at least a first metal layer and a second metal layer formed over said first metal layer and separated therefrom by an insulator, said first and second metal layers including portions arranged for selectable removal to provide desired customization of said blank, said insulator being formed with openings overlying regions of said first metal layer to be selectably removed.
Claim 54
Dependent Claim
68 words
A semiconductor device comprising a gate array blank including at least a first metal layer and a second metal layer formed over said first metal layer and separated therefrom by an insulator, said first and second metal layers including portions arranged for selectable removal to provide desired customization of said blank, said insulator being formed with openings overlying regions of said first metal layer to be selectably removed.
Claim 55
Dependent Claim
48 words
A semiconductor device according to claim 47 and also comprising an etch resistant layer formed over at least said first metal layer and having formed therein windows located over all portions of said at least said first metal layer sought to be removed in a predetermined customization configuration.
Claim 56
Dependent Claim
28 words
A semiconductor device according to claim 47 and wherein said first metal layer is a metal I layer and said second metal layer is a metal II layer.
Claim 57
Dependent Claim
30 words
A technique according to claim 1 and also including, prior to etching, the step of providing a photoresist layer which contacts locations on both said first and second metal layers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-23 | 1993-04-24 | 1993-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-23 | 1997-04-24 | 1997-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-23 | 2001-04-24 | 2001-10-24 | $7700.00 | Window Closed / Lapsed |