US4259367A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fine line repair technique
Assignee: International Business Machines Corp
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Filing: 1979-07-30
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Granted: 1981-03-31
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Expires: 1999-07-30
Abstract
Abstract Repair of opens and shorts in semiconductor packages and chip metallurgy by initial conversion of shorts into opens by severing of lines about the shorts, followed by interconnection of conductor patch lines to the good circuit portions through an insulating layer.
Inventors
- 👤 William E. Dougherty, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:37
CPC Classifications
H; H10; H10W; H10W99/00; H05; H05K; H05K3/00; H05K3/22; H05K3/225; H10W20/00; H10W20/01; H10W20/031; H10W20/067; H10W20/40; H10W20/49; H05K2203/00; H05K2203/17; H05K2203/173; H05K2203/175; H05K3/46; H05K3/4685
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
99 words
A method for repair of opens and shorts in planar semiconductor device metallurgy comprising: (a) deleting portions of conductor lines on both sides of any shorted sections to form opens for electrically isolating said sections; (b) coating said device over said metallurgy with a dielectric layer; (c) forming vias in the dielectric to the terminal ends of the basic conductor lines adjacent all opens; and (d) forming conductor patch lines on the dielectric layer over the opens in extension through said vias to the open-adjacent ends of the basic underlying conductor lines as part of said first level metallurgy.
Claim 2
Independent Claim
99 words
A method for repair of opens and shorts in planar semiconductor device metallurgy comprising: (a) deleting portions of conductor lines on both sides of any shorted sections to form opens for electrically isolating said sections; (b) coating said device over said metallurgy with a dielectric layer; (c) forming vias in the dielectric to the terminal ends of the basic conductor lines adjacent all opens; and (d) forming conductor patch lines on the dielectric layer over the opens in extension through said vias to the open-adjacent ends of the basic underlying conductor lines as part of said first level metallurgy.
Claim 3
Dependent Claim
60 words
The method of claim 1 including: (a) coating a second layer of a dielectric on said first said layer over said patch lines, and (b) forming vias through said first and second dielectric layers to predetermined points of said first level metallurgy, and (c) forming second level metallurgy on said second dielectric layer in interconnection with said first level metallurgy.
Claim 4
Dependent Claim
32 words
The method of claim 2 wherein said first dielectric layer comprises a fractional portion of the desired specification thickness, and said second dielectric layer comprises the remainder of said desired specification thickness.
Claim 5
Dependent Claim
17 words
The method of claim 3 wherein said first dielectric layer comprises about one-half said desired specification thickness.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-03-30 | 1984-09-29 | 1985-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-03-30 | 1988-09-29 | 1989-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-03-30 | 1992-09-29 | 1993-03-31 | $7700.00 | Window Closed / Lapsed |