Semiconductor device

Abstract

Abstract PURPOSE:To perform programming without short circuit caused by fusing spray by a method wherein Mo or W fuse wiring is used instead of polystyrene Si fuse, and electricity is optionally supplied in O2 or in the air to heat and sublimate the Mo fuse wiring. CONSTITUTION:Mo and a fuse 3 are deposited by evaporation between bit wires or word wires 2', 2''. The fuse 3 is formed into 300-500Angstrom thick, W=2.5mum, L=10mum. When 50mW pulse current is optionally surpplied for 10mu seconds, the fuse can be cut with an approximate half the power used for polystyrene Si fuse. Moreover, there will be no short circuit due to spray of the materials because Mo is entirely sublimated, and a high reliability can be obtained.

Inventors

• 👤 Hajime Kamioka
• 👤 上岡　元
• 👤 Seiichiro Kawamura
• 👤 河村　誠一郎
• 👤 Yoshihiko Higa
• 👤 比嘉　良彦
• 👤 Takashi Mitsuida
• 👤 高 三井田

Bibliographic Details