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US4636404A Expired / Lapsed US ⏱️ 0.0 years remaining

Method and apparatus for forming low resistance lateral links in a semiconductor device

Assignee: Massachusetts Institute of Technology
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Filing: 1984-09-17
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Granted: 1987-01-13
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Expires: 2004-09-17
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Abstract

Abstract A method and apparatus for reliably forming low resistance links between two aluminum conductors deposited on an insulating polysilicon or amorphous silicon layer, employ a laser to bridge a lateral gap between the conductors. The apparatus and method are ideally suited for implementing defect avoidance using redundancy in large random access memories and in complex VLSI circuits. Only a single level of metal is employed and leads to both higher density and lower capacitance in comparison to prior techniques. Resistances in the range of one to ten ohms can be achieved for gap widths of approximately two to three microns.

Inventors

  • 👤 Jack I. Raffel
  • 👤 John A. Yasaitis
  • 👤 Glenn H. Chapman

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 21:54
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; H10W20/492; Y; Y10; Y10S; Y10S148/00; Y10S148/14

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 74 words
A method for forming a conductive link in a semiconductor device comprising the steps of forming at least a first and a second single layer conductor, said first and second conductors being insulated from each other and having a planar gap therebetween and directing a low power laser source at a surface area of said device, including said gap, for forming a conductive bridge across said gap and connecting said first and second conductors.
Claim 2
Independent Claim 74 words
A method for forming a conductive link in a semiconductor device comprising the steps of forming at least a first and a second single layer conductor, said first and second conductors being insulated from each other and having a planar gap therebetween and directing a low power laser source at a surface area of said device, including said gap, for forming a conductive bridge across said gap and connecting said first and second conductors.
Claim 3
Dependent Claim 49 words
The method of claim 1 further comprising the initial steps of forming an electrically insulating layer on a substrate surface of said device, and forming an electrically insulating semiconductor layer in an overlying relationship to said electrically insulating layer, said conductors having an overlying relationship to said semiconductor layer.
Claim 4
Dependent Claim 13 words
The method of claim 2 wherein said semiconductor layer is a polysilicon layer.
Claim 5
Dependent Claim 22 words
The method of claim 3 further comprising the step of forming a diffusion prevention layer between said polysilicon layer and said conductors.
Claim 6
Dependent Claim 15 words
The method of claim 4 further comprising the step of post-metallization sintering said semiconductor device.
Claim 7
Dependent Claim 33 words
The method of claim 1 further comprising forming an amorphous silicon semiconductor layer in a juxtaposed relationship with said conductors before directing a low-power laser source at a surface area of said device.
Claim 8
Dependent Claim 18 words
The method of claim 6 wherein said amorphous silicon layer is in an overlying relationship atop said conductors.
Claim 9
Dependent Claim 18 words
The method of claim 7 wherein said conductors are in an overlying relationship atop said amorphous silicon layer.
Claim 10
Dependent Claim 20 words
The method of claim 2 or wherein said forming step forms said semiconductor layer in abutting contact with said conductors.

References Cited (Backward Citations)

US4023005A Cited
US4168444A Cited
US4151545A Cited
US4289834A Cited
US4270137A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-01-12 1990-07-14 1991-01-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-01-12 1994-07-14 1995-01-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-01-12 1998-07-14 1999-01-13 $7700.00 Window Closed / Lapsed

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