Method for forming a fuse

Abstract

Abstract A method for forming a titanium tungsten fuse begins with the steps of forming a silicon dioxide layer (42), a titanium tungsten layer (44) and a aluminum layer (46) on a silicon substrate (40). The titanium tungsten layer serves as fuse material while the aluminum layer serves as interconnect material. A photolithographic mask (48) is then applied to the wafer. The portion of the aluminum layer exposed by the photolithographic mask and the portion of the titanium tungsten layer lying thereunder are then removed. Because both the aluminum and titanium tungsten layers are etched simultaneously, a dry etching process can be used during this step. The resulting structure includes a thin aluminum and titanium tungsten region where the resulting fuse is to be formed. Thereafter, the first photolithographic mask is removed and a second photolithographic mask is applied to the wafer which includes a window region where the titanium tungsten fuse is to formed. The portion of the aluminum layer within this window region is then removed, thereby leaving a narrow titanium tungsten fuse between two metal regions.

Inventors

• 👤 Bradley A. Sharpe-Geisler

Bibliographic Details