US4381215A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating a misaligned, composite electrical contact on a semiconductor substrate
Assignee: Samsung Electronics Co Ltd
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Filing: 1980-05-27
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Granted: 1983-04-26
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Expires: 2000-05-27
Abstract
Abstract Disclosed is a method of fabricating an electrical contact to a region which lies at the surface of a semiconductor substrate and is doped opposite thereto. The method includes the steps of forming the combination of a silicide of a noble metal at the surface of the region, a layer of a barrier metal over the silicide, and a patterned conductor on a portion of the barrier metal layer which partly covers the region; etching partway through the portion of the barrier metal which is not covered by the patterned conductor; and thereafter oxidizing to completion, the portion of the barrier metal layer which is not covered by the patterned conductor and which remains after the etching step.
Inventors
- 👤 Paul D. Reynolds
- 👤 Norman W. Jones
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:49
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/01; H10W20/031; H10W20/064
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
150 words
A method of fabricating an electrical contact to a region which lies at the surface of a semiconductor substrate and is exposed through an opening in an insulating layer that overlies said surface; said method including the steps of: forming the combination of a silicide of a noble metal throughout the exposed surface of said region, a layer of a barrier metal over said silicide and said insulating layer, and a patterned conductor on a portion of said barrier metal layer; said patterned conductor being in misalignment with said opening such that it covers only part of said silicide and an adjacent portion of said insulating layer; etching partway through the portion of said barrier metal layer which is not covered by said patterned conductor; and thereafter oxidizing the portion of said barrier metal layer which is not covered by said patterned conductor and which remains after said etching step.
Claim 2
Independent Claim
150 words
A method of fabricating an electrical contact to a region which lies at the surface of a semiconductor substrate and is exposed through an opening in an insulating layer that overlies said surface; said method including the steps of: forming the combination of a silicide of a noble metal throughout the exposed surface of said region, a layer of a barrier metal over said silicide and said insulating layer, and a patterned conductor on a portion of said barrier metal layer; said patterned conductor being in misalignment with said opening such that it covers only part of said silicide and an adjacent portion of said insulating layer; etching partway through the portion of said barrier metal layer which is not covered by said patterned conductor; and thereafter oxidizing the portion of said barrier metal layer which is not covered by said patterned conductor and which remains after said etching step.
Claim 3
Dependent Claim
17 words
A method according to claim 1 wherein said region is doped N-type and said substrate is P-type.
Claim 4
Dependent Claim
17 words
A method according to claim 1 wherein said region is doped P-type and said substrate is N-type.
Claim 5
Dependent Claim
31 words
A method according to claim 1 wherein said barrier metal layer as formed is at least 1000 A thick, and is reduced to less than 600 A by said etching step.
Claim 6
Dependent Claim
17 words
A method according to claim 1 wherein said etching step is performed by a wet chemical etch.
Claim 7
Dependent Claim
16 words
A method according to claim 1 wherein said etching step is performed by a plasma etch.
Claim 8
Dependent Claim
12 words
A method according to claim 1 wherein said noble metal is platinum.
Claim 9
Dependent Claim
12 words
A method according to claim 1 wherein said barrier metal is titanium-tungsten.
Claim 10
Dependent Claim
11 words
A method according to claim 1 wherein said conductor is aluminum.
Claim 11
Dependent Claim
137 words
In a method of fabricating an electrical contact to a region which lies at the surface of a semiconductor substrate and is exposed through a rectangular opening in an insulating layer that overlies said surface; the improvement comprising the steps of forming a silicide of a noble metal throughout the exposed surface of said region; thereafter forming a layer of a barrier metal over said silicide and said insulating layer; thereafter forming a patterned conductor on a portion of said barrier metal layer, said patterned conductor being of substantially the same width as said opening and in misalignment with it as to cover only part of said exposed region and an adjacent portion of said insulating layer; and thereafter oxidizing at least a portion of said barrier metal layer which is not covered by said patterned conductor.
Claim 12
Dependent Claim
137 words
In a method of fabricating an electrical contact to a region which lies at the surface of a semiconductor substrate and is exposed through a rectangular opening in an insulating layer that overlies said surface; the improvement comprising the steps of forming a silicide of a noble metal throughout the exposed surface of said region; thereafter forming a layer of a barrier metal over said silicide and said insulating layer; thereafter forming a patterned conductor on a portion of said barrier metal layer, said patterned conductor being of substantially the same width as said opening and in misalignment with it as to cover only part of said exposed region and an adjacent portion of said insulating layer; and thereafter oxidizing at least a portion of said barrier metal layer which is not covered by said patterned conductor.
Claim 13
Dependent Claim
34 words
The invention of claim 10, and further including the steps of etching partway through the portion of said barrier metal layer which is not covered by said patterned conductor prior to said oxidizing step.
Claim 14
Dependent Claim
28 words
The invention according to claim 10 wherein said width of said opening and said patterned conductor equals the minimal dimension that can be made by method of fabricating.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-04-25 | 1986-10-25 | 1987-04-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-04-25 | 1990-10-25 | 1991-04-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-04-25 | 1994-10-25 | 1995-04-26 | $7700.00 | Window Closed / Lapsed |