Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a reliable and protective layer made of polysilicon utilized for an etching stopper during a residual etching process after forming an upper aluminium wiring layer by a method wherein the lowest aluminium wiring layer is formed on openings during upper opening process of a polysilicon fuse. CONSTITUTION:A fusing polysilicon 12 utilized for a part of redundancy circuit, a relatively thin SiO2 film 13 and another polysilicon film 14 are formed on another SiO2 film 11. A specified openings 16 are formed on an interlayer insulating film 15. When, after wiring pattern of the first layer aluminium 17, a residual silicon etching process is performed, the etching process has no influence upon the polysilicon 12 and the SiO2 film 13 at all due to the interlaid first layer aluminium 17 covering the upper part of the openings 16. Next after forming another interlayer insulating film 18, the first layer aluminium 17 on the main surface of the polysilicon layer 14 is removed during the etching process of the wiring patterning of the second layer aluminium. The upper surface of the polysilicon 12 may be exposed by means of repeating the same processes.

Inventors

• 👤 Yuji Hara
• 👤 原　雄次

Bibliographic Details