Semiconductor device

Abstract

Abstract PURPOSE:To prevent the characteristics of a semiconductor device from deteriorating by reducing a contaminant transmitting route fed from the hole of a fuse through a silicon oxide film to the active region of the device, thereby suppressing the invasion of the contaminant to the active region. CONSTITUTION:Na or other metal contained in atmospheric air or moisture is invaded as a contaminant from the end of a silicon oxide film 14 exposed in the hole 15 of a fuse through the film 14 to the end of the fuse 13. Since a polysilicon film 16 is formed to coat the film 14, the film 14 and a non-doped silicon oxide film 17 directly contact slightly only at the peripheral portion of a contact 19. The contaminant invaded from the hole 15 of the fuse to the film 14 becomes reduced at the contact with the film 17, thereby suppressing the transmission of the contaminant to the film 17.

Inventors

• 👤 Kazuyoshi Ooshima
• 👤 大嶋　一義
• 👤 Tetsuo Matsumoto
• 👤 哲郎 松本
• 👤 Masanori Hisaki
• 👤 壽木　正紀

Bibliographic Details