Method of making a semiconductor device involving simultaneous connection and disconnection

Claim 1

A method of producing a semiconductor device having first, second, third and fourth circuit means and capable of structurally switching conductivity between said first and second circuit means and between said third and fourth circuit means, comprising the steps of: introducing an impurity for generating crystal lattice defects in a semiconductor substrate; producing an N+-semiconductor region by doping said semiconductor substrate with an N-type impurity; depositing a first silicon oxide film on said semiconductor substrate; forming a polycrystalline silicon layer on said first silicon oxide film; selectively etching said first silicon oxide film and said polycrystalline silicon layer; forming a pair of P+-semiconductor regions having a predetermined distance therebetween which comprises a first conductor means said polycrystalline silicon layer comprising a second conductor means, said first conductor means being connected between said first and second circuit means, and said second conductor means being connected between said third and fourth circuit means; forming a second silicon oxide film having contact holes on said semiconductor substrate, said contact holes extending to said respective P+-semiconductor regions; depositing metal on said second silicon oxide film to form electrodes connecting to said respective P+- semiconductor regions through said contact holes; and radiating electromagnetic energy at a predetermined portion of said semiconductor to fuse the polycrystalline silicon layer and to combine the P+-semiconductor regions simultaneously with said fusing to cause said first conductor means to be conductive and said second conductor means to be noncondutive.

Claim 2

A method of producing a semiconductor device having first, second, third and fourth circuit means and capable of structurally switching conductivity between said first and second circuit means and between said third and fourth circuit means, comprising the steps of: introducing an impurity for generating crystal lattice defects in a semiconductor substrate; producing an N+-semiconductor region by doping said semiconductor substrate with an N-type impurity; depositing a first silicon oxide film on said semiconductor substrate; forming a polycrystalline silicon layer on said first silicon oxide film; selectively etching said first silicon oxide film and said polycrystalline silicon layer; forming a pair of P+-semiconductor regions having a predetermined distance therebetween which comprises a first conductor means said polycrystalline silicon layer comprising a second conductor means, said first conductor means being connected between said first and second circuit means, and said second conductor means being connected between said third and fourth circuit means; forming a second silicon oxide film having contact holes on said semiconductor substrate, said contact holes extending to said respective P+-semiconductor regions; depositing metal on said second silicon oxide film to form electrodes connecting to said respective P+- semiconductor regions through said contact holes; and radiating electromagnetic energy at a predetermined portion of said semiconductor to fuse the polycrystalline silicon layer and to combine the P+-semiconductor regions simultaneously with said fusing to cause said first conductor means to be conductive and said second conductor means to be noncondutive.

Claim 3

A method of producing a semiconductor device having first, second, third and fourth circuit means and capable of structurally switching conductivity between said first and second circuit means and between said third and fourth circuit means, comprising the steps of: providing a semiconductor substrate of a first conductivity type; introducing an impurity for generating crystal lattice defects in said semiconductor substrate; forming a first conductor including a pair of first semiconductor regions having a second conductivity type and formed at a predetermined interval in the surface region of said semiconductor substrate; and a second semiconductor region of a first conductivity type being formed between said first semiconductor regions, said first conductor being initially in a nonconductive state and connected between said first and second means; providing insulation on at least said first conductor; forming a second conductor on said insulation, said second conductor extending across said first conductor and being electrically conductive in an initial state, said second conductor being connected between said third and fourth circuit means; and radiating electromagnetic energy on at least a portion of said substrate enabling said second conductor means to be electrically disconnected and simultaneously enabling said first semiconductor region to be electrically connected.

Claim 4

A method of producing a semiconductor device having first, second, third and fourth circuit means and capable of structurally switching conductivity between said first and second circuit means and between said third and fourth circuit means, comprising the steps of: providing a semiconductor substrate of a first conductivity type; introducing an impurity for generating crystal lattice defects in said semiconductor substrate; forming a first conductor including a pair of first semiconductor regions having a second conductivity type and formed at a predetermined interval in the surface region of said semiconductor substrate; and a second semiconductor region of a first conductivity type being formed between said first semiconductor regions, said first conductor being initially in a nonconductive state and connected between said first and second means; providing insulation on at least said first conductor; forming a second conductor on said insulation, said second conductor extending across said first conductor and being electrically conductive in an initial state, said second conductor being connected between said third and fourth circuit means; and radiating electromagnetic energy on at least a portion of said substrate enabling said second conductor means to be electrically disconnected and simultaneously enabling said first semiconductor region to be electrically connected.