US4351674A
Expired / Lapsed
US
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Method of producing a semiconductor device
Assignee: Hitachi Ltd
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Filing: 1980-08-29
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Granted: 1982-09-28
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Expires: 2000-08-29
Abstract
Abstract A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistance. Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.
Inventors
- 👤 Isao Yoshida
- 👤 Yasuo Wada
- 👤 Masao Tamura
- 👤 Masanobu Miyao
- 👤 Makoto Ohkura
- 👤 Nobuyoshi Natsuaki
- 👤 Takashi Tokuyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 19:33
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P32/00; H10P32/30; H10P32/302; Y; Y10; Y10S; Y10S148/00; Y10S148/091
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
75 words
A method of producing a semiconductor device including the step of irradiating with a laser beam both a first region which contains an impurity at a high concentration and a second region which adjoins the first region to diffuse said impurity in a plane direction into said second region, whereby the impurity is more uniformly distributed in the first and second regions to provide a more uniform impurity concentration in the first and second regions.
Claim 2
Independent Claim
75 words
A method of producing a semiconductor device including the step of irradiating with a laser beam both a first region which contains an impurity at a high concentration and a second region which adjoins the first region to diffuse said impurity in a plane direction into said second region, whereby the impurity is more uniformly distributed in the first and second regions to provide a more uniform impurity concentration in the first and second regions.
Claim 3
Dependent Claim
26 words
A method of producing a semiconductor device as defined in claim 1, wherein said first region and said second region are formed on an insulating film.
Claim 4
Dependent Claim
30 words
A method of producing a semiconductor device as defined in claim 1, wherein said first region and said second region are formed in a surface region of a semiconductor substrate.
Claim 5
Dependent Claim
27 words
A method of producing a semiconductor device as defined in claim 1 or 2, wherein said semiconductor device is a metal-insulator-semiconductor field effect transistor or a resistor.
Claim 6
Dependent Claim
45 words
A method of producing a semiconductor device as defined in claim 1 or 2 or 3, wherein said first region and said second region are laterally adjacent each other, and said irradiating acts to diffuse said impurity in a lateral direction into said second region.
Claim 7
Dependent Claim
25 words
A method of producing a semiconductor device as defined in claim 5, wherein said irradiating with a laser beam fuses said first and second regions.
Claim 8
Dependent Claim
29 words
A method of producing a semiconductor device as defined in claim 1 or 2 or 3, wherein said irradiating with a laser beam fuses said first and second regions.
Claim 9
Dependent Claim
37 words
A method of producing a semiconductor device as defined in claim 4, wherein said semiconductor device is a metal-insulator-semiconductor field effect transistor, and said first and second regions constitute a gate electrode of said field effect transistor.
Claim 10
Dependent Claim
29 words
A method of producing a semiconductor device as defined in claim 8, wherein only said first and second regions are irradiated with the laser beam to diffuse said impurity.
Claim 11
Dependent Claim
29 words
A method of producing a semiconductor device as defined in claim 5, wherein only said first and second regions are irradiated with the laser beam to diffuse said impurity.
Claim 12
Dependent Claim
33 words
A method of producing a semiconductor device as defined in claim 1 or 2 or 3, wherein only said first and second regions are irradiated with the laser beam to diffuse said impurity.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-09-27 | 1986-03-29 | 1986-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-09-27 | 1990-03-29 | 1990-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-09-27 | 1994-03-29 | 1994-09-28 | $7700.00 | Window Closed / Lapsed |