US4172741A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for laser trimming of bi-FET circuits
Assignee: National Semiconductor Corp
•
Filing: 1977-09-06
•
Granted: 1979-10-30
•
Expires: 1997-09-06
Abstract
Abstract Radiant energy, preferably that of a laser, is focused onto the surface of a silicon integrated circuit that contains a thin layer doped to the opposite conductivity type of the underlying silicon. The thin layer can be trimmed so as to tailor its conductivity. Such layers when used in JFET, diode, bipolar transistor, or resistor structures can therefore be precision trimmed. In particular, JFET pairs can be trimmed to a very close match.
Inventors
- 👤 Robert F. Johnson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 04:55
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; Y; Y10; Y10S; Y10S148/00; Y10S148/092; Y10S148/093; Y10S438/00; Y10S438/94
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
112 words
The process for altering the conductivity of a layer of semiconductor located in a semiconductor body, said layer being characterized as having a conductivity type opposite to that of said body and extending below the surface of said body to a depth of less than about a micron to create an area p n junction therewith, said process comprising: applying radiant energy to said body in the region of said layer, said energy being of a wavelength and a magnitude to produce a reaction in said layer thereby to alter the conductivity of said layer; and maintaining the level of said radiation below a value that would damage said p n junction.
Claim 2
Dependent Claim
112 words
The process for altering the conductivity of a layer of semiconductor located in a semiconductor body, said layer being characterized as having a conductivity type opposite to that of said body and extending below the surface of said body to a depth of less than about a micron to create an area p n junction therewith, said process comprising: applying radiant energy to said body in the region of said layer, said energy being of a wavelength and a magnitude to produce a reaction in said layer thereby to alter the conductivity of said layer; and maintaining the level of said radiation below a value that would damage said p n junction.
Claim 3
Dependent Claim
25 words
The process of claim 1 wherein said energy is monochromatic and said wavelength is selected to be near the optical absorption peak of said semiconductor.
Claim 4
Dependent Claim
15 words
The process of claim 1 wherein said layer is the channel region of a JFET.
Claim 5
Dependent Claim
14 words
The process of claim 1 wherein said layer forms a resistor in said semiconductor.
Claim 6
Dependent Claim
14 words
The process of claim 1 wherein said layer forms one electrode of a diode.
Claim 7
Dependent Claim
15 words
The process of claim 1 wherein said layer forms one electrode in a bipolar transistor.
Claim 8
Independent Claim
100 words
The method of matching a pair of JFET devices incorporated into a monolithic semiconductor integrator circuit, said JFET devices each including source, drain, and channel region with said channel region including a layer of semiconductor of a type opposite to that of the underlying material, said method comprising the steps: determining the more conductive one of said JFET pair; applying radiant energy to said channel region of said more conductive one, said radiant energy being of a wavelength and magnitude to cause a reaction in said channel region; and continuing said application of radiant energy until said pair is matched.
Claim 9
Independent Claim
100 words
The method of matching a pair of JFET devices incorporated into a monolithic semiconductor integrator circuit, said JFET devices each including source, drain, and channel region with said channel region including a layer of semiconductor of a type opposite to that of the underlying material, said method comprising the steps: determining the more conductive one of said JFET pair; applying radiant energy to said channel region of said more conductive one, said radiant energy being of a wavelength and magnitude to cause a reaction in said channel region; and continuing said application of radiant energy until said pair is matched.
Claim 10
Dependent Claim
20 words
The method of claim 7 wherein said semiconductor is silicon and said wavelength is selected to be about one micron.
Claim 11
Dependent Claim
21 words
The method of claim 7 wherein said layer is located less than about a micron below the surface of said semiconductor.
Claim 12
Dependent Claim
18 words
The method of claim 8 wherein said energy is selected to be about 40,000 watts per square inch.
Claim 13
Dependent Claim
23 words
The method of claim 10 wherein radiant energy is produced by a laser focused to a spot small with respect to said channel.
Claim 14
Dependent Claim
10 words
The method of claim 11 wherein said laser is pulsed.
Claim 15
Dependent Claim
13 words
The method of claim 11 wherein said laser is continuously operated while trimming.
Claim 16
Dependent Claim
13 words
The method of claim 11 wherein said spot is translated during said trimming.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-10-29 | 1983-04-30 | 1983-10-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-10-29 | 1987-04-30 | 1987-10-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-10-29 | 1991-04-30 | 1991-10-30 | $7700.00 | Window Closed / Lapsed |