US4278475A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation
Assignee: Westinghouse Electric Corp
•
Filing: 1979-01-04
•
Granted: 1981-07-14
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Expires: 1999-01-04
Abstract
Abstract Irradiated regions are formed in materials such as semiconductor bodies by nuclear radiation where the irradiated regions are of a desired thickness, dosage and dosage gradient, a desired distance from a selected surface of the material. A nuclear radiation beam from a given radiation source radiating particles with molecular weight of at least one (1) is provided that can penetrate the material through a selected surface to a depth greater than the maximum depth of the irradiated region from the selected surface. A beam modifier is formed of a given material and non-uniform shape to modify the energy of the radiation beam on transmission therethrough to form a transmitted radiation beam capable of forming an irradiated region of a desired thickness and dosage gradient in the material a given distance from the selected surface on irradiation of the material through the selected surface with the transmitted radiation beam. The material in which the desired irradiated region is to be formed is positioned with the selected surface thereof to be exposed to the radiation beam from the radiation source on transmission through the beam modifier. The material is thereafter irradiated through the beam modifier and through the selected surface with the radiation beam, preferably while the beam modifier and material are moved relative to each other through a predetermined motion, to form in the material an irradiated region of desired thickness, dosage and dosage gradient, a desired distance from the selected surface. The irradiated region thus formed in semiconductor bodies are particularly of value in changing the electrical characteristics without substantial change of other electrical characteristics.
Inventors
- 👤 John Bartko
- 👤 Earl S. Schlegel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:21
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; G; G21; G21K; G21K1/00; G21K1/10; H10D; H10D62/00; H10D62/50; H10D62/53; Y; Y10; Y10S; Y10S438/00; Y10S438/961
Claims Analysis
Total Claims: 120
Claim 1
Independent Claim
220 words
A method of forming an irradiated region of a desired thickness, dosage and dosage gradient in a material a desired distance from a selected surface thereof comprising the steps of: A. providing a radiation beam from a given radiation source radiating particles with molecular weight of at least one (1) capable of penetrating a material wherein an irradiated region is to be formed through a selected surface to greater than a maximum desired depth of the irradiated region from the selected surface; B. modifying the beam with a beam modifier of a given material and non-uniform shape to modify the energy of said radiation beam on transmission therethrough to form a transmitted radiation beam capable of forming an irradiated region of a desired thickness and dosage gradient in the material a given distance from the selected surface on irradiation of the material through the selected surface with the transmitted radiation beam; C. positioning the material with said selected surface thereof to be exposed to the radiation beam from the radiation source on transmission through the beam modifier modifying the energy of the beam; and D. thereafter irradiating the material through the beam modifier and through the selected surface to form in the material an irradiation region of desired thickness, dosage and dosage gradient a desired distance from the selected surface.
Claim 2
Independent Claim
220 words
A method of forming an irradiated region of a desired thickness, dosage and dosage gradient in a material a desired distance from a selected surface thereof comprising the steps of: A. providing a radiation beam from a given radiation source radiating particles with molecular weight of at least one (1) capable of penetrating a material wherein an irradiated region is to be formed through a selected surface to greater than a maximum desired depth of the irradiated region from the selected surface; B. modifying the beam with a beam modifier of a given material and non-uniform shape to modify the energy of said radiation beam on transmission therethrough to form a transmitted radiation beam capable of forming an irradiated region of a desired thickness and dosage gradient in the material a given distance from the selected surface on irradiation of the material through the selected surface with the transmitted radiation beam; C. positioning the material with said selected surface thereof to be exposed to the radiation beam from the radiation source on transmission through the beam modifier modifying the energy of the beam; and D. thereafter irradiating the material through the beam modifier and through the selected surface to form in the material an irradiation region of desired thickness, dosage and dosage gradient a desired distance from the selected surface.
Claim 3
Dependent Claim
51 words
A method of forming an irradiated region of a desired thickness, dosage and dosage gradient in a material a desired distance from a selected surface thereof as set forth in claim 1 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 4
Dependent Claim
44 words
A method of forming an irradiated region of a desired thickness, dosage and dosage gradient in a material a desired distance from a selected surface thereof as set forth in claim 1 wherein: in step A, the radiation source is a substantially monoenergetic source.
Claim 5
Dependent Claim
51 words
A method of forming an irradiated region of a desired thickness, dosage and dosage gradient in a material a desired distance from a selected surface thereof as set forth in claim 3 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 6
Dependent Claim
55 words
A method of forming an irradiated region of a desired thickness, dosage and dosage gradient in a material a desired distance from a selected surface thereof as set forth in claim 1 comprising in addition: E. moving the beam modifier and the material relative to each other through a predetermined motion during the irradiation step.
Claim 7
Independent Claim
207 words
A method of changing the electrical characteristics of a semiconductor body comprising the steps of: A. providing a radiation beam from a given radiation source radiating particles with molecular weight of at least one (1) capable of penetrating a semiconductor body wherein an irradiated region is to be formed through a selected surface to greater than a maximum desired depth of the irradiated region; B. modifying the beam with a beam modifier of a given material and non-uniform shape to modify the energy of said radiation beam on transmission therethrough to form a transmitted radiation beam capable of forming an irradiated region of a desired thickness and dosage gradient in the semiconductor body a given distance from the selected surface on irradiation of the semiconductor body through the selected surface with the transmitted radiation beam; C. positioning the semiconductor body with said selected surface thereof to be exposed to the radiation beam from the radiation source on transmission through the beam modifier modifying the energy of the beam; and D. thereafter irradiating the semiconductor body through the beam modifier and through the selected surface to form in the semiconductor body an irradiated region of desired thickness, dosage and dosage gradient a desired distance from the selected surface.
Claim 8
Independent Claim
207 words
A method of changing the electrical characteristics of a semiconductor body comprising the steps of: A. providing a radiation beam from a given radiation source radiating particles with molecular weight of at least one (1) capable of penetrating a semiconductor body wherein an irradiated region is to be formed through a selected surface to greater than a maximum desired depth of the irradiated region; B. modifying the beam with a beam modifier of a given material and non-uniform shape to modify the energy of said radiation beam on transmission therethrough to form a transmitted radiation beam capable of forming an irradiated region of a desired thickness and dosage gradient in the semiconductor body a given distance from the selected surface on irradiation of the semiconductor body through the selected surface with the transmitted radiation beam; C. positioning the semiconductor body with said selected surface thereof to be exposed to the radiation beam from the radiation source on transmission through the beam modifier modifying the energy of the beam; and D. thereafter irradiating the semiconductor body through the beam modifier and through the selected surface to form in the semiconductor body an irradiated region of desired thickness, dosage and dosage gradient a desired distance from the selected surface.
Claim 9
Dependent Claim
41 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 6 comprising in addition: E. moving the beam modifier and the semiconductor body relative to each other through a predetermined motion during the irradiation step.
Claim 10
Dependent Claim
36 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 7 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 11
Dependent Claim
29 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 7 wherein: in step A, the radiation source is a substantially monoenergetic source.
Claim 12
Dependent Claim
36 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 9 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 13
Dependent Claim
37 words
A method of changing the electric characteristics of a semiconductor body as set forth in claim 6 comprising in addition: E. masking selected portions of the semiconductor body against irradiation from said radiation source during step D.
Claim 14
Dependent Claim
36 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 11 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 15
Dependent Claim
29 words
A method of changing the electrical characteristics of a semiconductor device as set forth in claim 11 wherein: in step A, the radiation source is a substantially monoenergetic source.
Claim 16
Dependent Claim
36 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 13 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 17
Dependent Claim
43 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 6 comprising in addition: F. annealing the semiconductor device to reduce sensitivity of electrical characteristics of the irradiated portion of the device to changes in operating temperature.
Claim 18
Dependent Claim
36 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 15 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 19
Dependent Claim
29 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 15 wherein: in step A, the radiation source is a substantially monoenergetic source.
Claim 20
Dependent Claim
36 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 17 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 21
Dependent Claim
37 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 15 comprising in addition: G. masking selected portions of the semiconductor body against irradiation from said radiation source during step D.
Claim 22
Dependent Claim
36 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 19 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 23
Dependent Claim
29 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 19 wherein: in step A, the radiation source is a substantially monoenergetic source.
Claim 24
Dependent Claim
36 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 21 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 25
Independent Claim
224 words
A method of changing the electrical characteristics of a thyristor comprising the steps of: A. providing a given radiation source radiating particles with molecular weight of at least one (1) capable of penetrating a thyristor wherein an irradiated region is to be formed through a selected surface to greater than a maximum desired depth of the irradiated region; B. forming a beam modifier of a given material and non-uniform shape to modify the energy of said radiation beam on transmission therethrough to form a transmitted radiation beam capable of forming an irradiated region of a desired thickness and dosage gradient in a gating portion of the thyristor a given distance from the selected surface on irradiation of the gating portion through a selected surface with the transmitted radiation beam; C. positioning the thyristor with said selected surface adjoining such gating portion thereof to be exposed to the radiation beam from the radiation source on transmission through the beam modifier modifying the energy of the beam; D. masking at least part of the conducting portions of the thyristor against irradiation from said radiation source; and E. thereafter irradiating the gating portions of the thyristor through the beam modifier and through the selected surface to form in the gating portion an irradiated region of desired thickness, dosage and gradient a desired distance from the selected surface.
Claim 26
Independent Claim
224 words
A method of changing the electrical characteristics of a thyristor comprising the steps of: A. providing a given radiation source radiating particles with molecular weight of at least one (1) capable of penetrating a thyristor wherein an irradiated region is to be formed through a selected surface to greater than a maximum desired depth of the irradiated region; B. forming a beam modifier of a given material and non-uniform shape to modify the energy of said radiation beam on transmission therethrough to form a transmitted radiation beam capable of forming an irradiated region of a desired thickness and dosage gradient in a gating portion of the thyristor a given distance from the selected surface on irradiation of the gating portion through a selected surface with the transmitted radiation beam; C. positioning the thyristor with said selected surface adjoining such gating portion thereof to be exposed to the radiation beam from the radiation source on transmission through the beam modifier modifying the energy of the beam; D. masking at least part of the conducting portions of the thyristor against irradiation from said radiation source; and E. thereafter irradiating the gating portions of the thyristor through the beam modifier and through the selected surface to form in the gating portion an irradiated region of desired thickness, dosage and gradient a desired distance from the selected surface.
Claim 27
Dependent Claim
38 words
A method of changing the electrical characteristics of a thyristor as set forth in claim 23 comprising in addition: F. moving the beam modifier and thyristor relative to each other through a predetermined motion during the irradiation step.
Claim 28
Dependent Claim
35 words
A method of changing the electrical characteristics of a thyristor as set forth in claim 24 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 29
Dependent Claim
28 words
A method of changing the electrical characteristics of a thyristor as set forth in claim 24 wherein: in step A, the radiation source is a substantially monoenergetic source.
Claim 30
Dependent Claim
35 words
A method of changing the electrical characteristics of a thyristor as set forth in claim 26 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 31
Dependent Claim
35 words
A method of changing the electrical characteristics of a thyristor as set forth in claim 23 wherein: the selected surface of thyristor through which irradiation is performed is adjacent a cathode-emitter region of the thyristor.
Claim 32
Dependent Claim
48 words
A method of changing the electrical characteristics of a thyristor as set forth in claim 23 wherein: in step E, the irradiated region formed in the gating portion of the thyristor is at least in part adjacent a PN junction between cathode-base and anode-base regions of the thyristor.
Claim 33
Dependent Claim
39 words
A method of changing the electrical characteristics of a thyristor as set forth in claim 23 wherein: in step E, the irradiated region in the gating portion adjacent a PN junction between anode-base and anode-emitter regions of the thyristor.
Claim 34
Dependent Claim
214 words
A semiconductor device having an irradiation region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared by: A. providing a radiation beam from a given radiation source radiating particles with molecular weights of at least one (1) capable of penetrating the semiconductor device through the selected surface to a depth greater than a maximum desired depth of the irradiated region; B. modifying the beam with a beam modifier of a given material and non-uniform shape to modify the energy of said radiation beam on transmission therethrough to form a transmitted radiation beam capable of forming an irradiated region of a desired thickness and dosage gradient in the semiconductor device the given distance from the selected surface on irradiation of the semiconductor device through a selected surface with the transmitted radiation beam; C. positioning the semiconductor device with said selected surface thereof to be exposed to the radiation beam from the radiation source on transmission through the beam modifier modifying the energy of the beam; and D. thereafter irradiating the semiconductor device through the beam modifier and through the selected surface to form in the semiconductor device a nuclear irradiated region of defect generation having the desired thickness, dosage and dosage gradient the desired distance from the selected surface.
Claim 35
Dependent Claim
214 words
A semiconductor device having an irradiation region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared by: A. providing a radiation beam from a given radiation source radiating particles with molecular weights of at least one (1) capable of penetrating the semiconductor device through the selected surface to a depth greater than a maximum desired depth of the irradiated region; B. modifying the beam with a beam modifier of a given material and non-uniform shape to modify the energy of said radiation beam on transmission therethrough to form a transmitted radiation beam capable of forming an irradiated region of a desired thickness and dosage gradient in the semiconductor device the given distance from the selected surface on irradiation of the semiconductor device through a selected surface with the transmitted radiation beam; C. positioning the semiconductor device with said selected surface thereof to be exposed to the radiation beam from the radiation source on transmission through the beam modifier modifying the energy of the beam; and D. thereafter irradiating the semiconductor device through the beam modifier and through the selected surface to form in the semiconductor device a nuclear irradiated region of defect generation having the desired thickness, dosage and dosage gradient the desired distance from the selected surface.
Claim 36
Dependent Claim
50 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 31 comprising in addition: F. moving the beam modifier and the semiconductor device relative to each other through a predetermined motion during the irradiation step.
Claim 37
Dependent Claim
45 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 32 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 38
Dependent Claim
38 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 32 wherein: in step A, the radiation source is a substantially monoenergetic source.
Claim 39
Dependent Claim
45 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 34 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 40
Dependent Claim
48 words
A semiconductor device having an irradiated region a given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 31 with the additional step of: E. masking selected portions of the semiconductor device against irradiation from said radiation source during step D.
Claim 41
Dependent Claim
45 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 36 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 42
Dependent Claim
38 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 36 wherein: in step A, the radiation source is a substantially monoenergetic source.
Claim 43
Dependent Claim
45 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 34 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 44
Dependent Claim
54 words
A semiconductor device having an irradiation region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 31 with the additional step of: F. annealing the semiconductor device to reduce sensitivity of electrical characteristics of the irradiated portion of the device to changes in operating temperature.
Claim 45
Dependent Claim
45 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 40 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 46
Dependent Claim
38 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 40 wherein: in step A, the radiation source is a substantially monoenergetic source.
Claim 47
Dependent Claim
45 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 41 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 48
Dependent Claim
48 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 40 with the additional step of: G. masking selected portions of the semiconductor device against irradiation from said radiation source during step D.
Claim 49
Dependent Claim
45 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 44 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 50
Dependent Claim
38 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 44 wherein: in step A, the radiation source is a substantially monoenergetic source.
Claim 51
Dependent Claim
45 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 46 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 52
Dependent Claim
227 words
A thyristor having in gating portions thereof an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared by: A. providing a radiation beam from a given radiation source radiating particles with molecular weight of at least one (1) capable of penetrating the thyristor through the selection surface to a depth greater than a maximum desired depth of the irradiated region; B. modifying the beam with a beam modifier of a given material and non-uniform shape to modify the energy of said radiation beam on transmission therethrough a transmitted radiation beam capable of forming an irradiated region of a desired thickness and dosage gradient in a gating portion of the thyristor the given distance from the selected surface with the transmitted radiation beam; C. positioning the thyristor with said selected surface adjoining said gating portion thereof to be exposed to the radiation beam from the radiation source on transmission through the beam modifier modifying the energy of the beam; D. masking at least part of the conducting portions of the thyristor against irradiation from said radiation source; and E. thereafter irradiating the gating portion of the thyristor through the beam modifier and through the selected surface to form in the gating portion the irradiated region of the desired thickness, dosage and dosage gradient the desired distance from the selected surface.
Claim 53
Dependent Claim
227 words
A thyristor having in gating portions thereof an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared by: A. providing a radiation beam from a given radiation source radiating particles with molecular weight of at least one (1) capable of penetrating the thyristor through the selection surface to a depth greater than a maximum desired depth of the irradiated region; B. modifying the beam with a beam modifier of a given material and non-uniform shape to modify the energy of said radiation beam on transmission therethrough a transmitted radiation beam capable of forming an irradiated region of a desired thickness and dosage gradient in a gating portion of the thyristor the given distance from the selected surface with the transmitted radiation beam; C. positioning the thyristor with said selected surface adjoining said gating portion thereof to be exposed to the radiation beam from the radiation source on transmission through the beam modifier modifying the energy of the beam; D. masking at least part of the conducting portions of the thyristor against irradiation from said radiation source; and E. thereafter irradiating the gating portion of the thyristor through the beam modifier and through the selected surface to form in the gating portion the irradiated region of the desired thickness, dosage and dosage gradient the desired distance from the selected surface.
Claim 54
Dependent Claim
54 words
A thyristor having in gating portions thereof an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface as set forth in claim 48 comprising in addition: F. moving the beam modifier and the semiconductor device relative to each other through a predetermined motion during the irradiated step.
Claim 55
Dependent Claim
48 words
A thyristor having in gating portions thereof an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 49 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 56
Dependent Claim
41 words
A thyristor having in gating portions thereof an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 49 wherein: in step A, the radiation source is a substantially monoenergetic source.
Claim 57
Dependent Claim
48 words
A thyristor having in gating portions thereof an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 51 wherein: in step A, the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 58
Dependent Claim
49 words
A thyristor having in gating portions thereof an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 49 wherein: the selected surface of the thyristor through which irradiation is performed is adjacent a cathode-emitter region of the thyristor.
Claim 59
Dependent Claim
61 words
A thyristor having in gating portions thereof an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 49 wherein: in step E, the irradiated portion formed in the gating portion of the thyristor is at least in part adjacent the PN junction between cathode-base and anode-base regions of the thyristor.
Claim 60
Dependent Claim
53 words
A thyristor having in gating portions thereof an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 49 wherein: in step E, the irradiated portion formed in the gating portion adjacent the PN junction between anode-base and anode-emitter regions of the thyristor.
Claim 61
Independent Claim
145 words
A method of forming an irradiated region having a selected thickness, dosage and dosage gradient at a selected depth from a selected surface thereof, in a given material, said method comprising: providing a radiation beam with particles with molecular weight of at least one with sufficient energy to penetrate the material through the selected surface and beyond the maximum depth of the irradiated region; attenuating said radiation beam with a beam modifier having at least one face that is sloped with respect to the direction of the beam such that the attenuated beam is of an energy to form an irradiated region of a selected depth, thickness, and dosage gradient in the material, and irradiating the selected surface of the material with the attenuated beam to form an irradiation region of a selected thickness, dosage and dosage gradient at a selected depth in the material.
Claim 62
Independent Claim
145 words
A method of forming an irradiated region having a selected thickness, dosage and dosage gradient at a selected depth from a selected surface thereof, in a given material, said method comprising: providing a radiation beam with particles with molecular weight of at least one with sufficient energy to penetrate the material through the selected surface and beyond the maximum depth of the irradiated region; attenuating said radiation beam with a beam modifier having at least one face that is sloped with respect to the direction of the beam such that the attenuated beam is of an energy to form an irradiated region of a selected depth, thickness, and dosage gradient in the material, and irradiating the selected surface of the material with the attenuated beam to form an irradiation region of a selected thickness, dosage and dosage gradient at a selected depth in the material.
Claim 63
Dependent Claim
24 words
A method as set forth in claim 56 wherein: the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 64
Dependent Claim
17 words
A method as set forth in claim 56 wherein: the radiation source is a substantially monoenergetic source.
Claim 65
Dependent Claim
24 words
A method as set forth in claim 58 wherein: the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 66
Dependent Claim
30 words
A method as set forth in claim 56 comprising in addition: moving the beam modifier and the material relative to each other through a predetermined motion during the irradiation step.
Claim 67
Independent Claim
150 words
A method of forming an irradiated region having a selected thickness, dosage and dosage gradient and being at a selected depth from a selected surface thereof in a semiconductor body, said method comprising: providing a radiation beam having particles with molecular weight of at least one with sufficient energy to penetrate the semiconductor body through the selected surface to beyond the maximum depth of the irradiated region; attenuating the radiation beam with a beam modifier having at least one face that is sloped with respect to the direction of the beam such that the attenuated beam is of an energy to form an irradiated region of a selected depth, thickness, and dosage gradient in the semiconductor body; and irradiating the selected surface of the semiconductor body with the attenuated beam to form an irradiation region of a selected thickness, dosage and dosage gradient at a selected depth in the material.
Claim 68
Independent Claim
150 words
A method of forming an irradiated region having a selected thickness, dosage and dosage gradient and being at a selected depth from a selected surface thereof in a semiconductor body, said method comprising: providing a radiation beam having particles with molecular weight of at least one with sufficient energy to penetrate the semiconductor body through the selected surface to beyond the maximum depth of the irradiated region; attenuating the radiation beam with a beam modifier having at least one face that is sloped with respect to the direction of the beam such that the attenuated beam is of an energy to form an irradiated region of a selected depth, thickness, and dosage gradient in the semiconductor body; and irradiating the selected surface of the semiconductor body with the attenuated beam to form an irradiation region of a selected thickness, dosage and dosage gradient at a selected depth in the material.
Claim 69
Dependent Claim
40 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 61 comprising in addition: moving the beam modifier and the semiconductor body relative to each other through a predetermined motion during the irradiation step.
Claim 70
Dependent Claim
33 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 62 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 71
Dependent Claim
26 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 62 wherein the radiation source is a substantially monoenergetic source.
Claim 72
Dependent Claim
33 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 64 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 73
Dependent Claim
33 words
A method of changing the electric characteristics of a semiconductor body as set forth in claim 61 comprising in addition: masking selected protons of the semiconductor body against irradiation from said radiation source.
Claim 74
Dependent Claim
33 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 66 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 75
Dependent Claim
26 words
A method of changing the electrical characteristics of a semiconductor device as set forth in claim 66 wherein the radiation source is a substantially monoenergetic source.
Claim 76
Dependent Claim
33 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 68 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 77
Dependent Claim
43 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 61 comprising in addition: annealing the semiconductor device to reduce sensitivity of of electrical characteristics of the irradiated portion of the device to changes in operating temperature.
Claim 78
Dependent Claim
33 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 70 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 79
Dependent Claim
26 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 70 wherein the radiation source is a substantially monoenergetic source.
Claim 80
Dependent Claim
33 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 72 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 81
Dependent Claim
33 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 70 comprising in addition: masking selected portions of the semiconductor body against irradiation from said radiation source.
Claim 82
Dependent Claim
33 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 74 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 83
Dependent Claim
26 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 74 wherein the radiation source is a substantially monoenergetic source.
Claim 84
Dependent Claim
33 words
A method of changing the electrical characteristics of a semiconductor body as set forth in claim 76 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 85
Independent Claim
164 words
A method of changing the electrical characteristics of a thyristor, said method comprising: providing a radiation beam having particles with molecular weight of at least one with sufficient energy to penetrate the thyristor through the selected surface to beyond the maximum depth of the irradiated region; attenuating the radiation beam with a beam modifier having at least one face that is sloped with respect to the direction of the beam such that the attenuated beam is of an energy to form an irradiated region of a selected depth, thickness, and dosage gradient in the gating portion of the thyristor; masking at least part of the conducting portions of the thyristor against irradiation from said radiation source; and irradiating the selected surface of the thyristor with the unmasked portions of the attenuated beam to form an irradiated region in the gating portion having a selected thickness, dosage and dosage gradient in the gating portion at a selected depth in the gating portions of the thyristor.
Claim 86
Independent Claim
164 words
A method of changing the electrical characteristics of a thyristor, said method comprising: providing a radiation beam having particles with molecular weight of at least one with sufficient energy to penetrate the thyristor through the selected surface to beyond the maximum depth of the irradiated region; attenuating the radiation beam with a beam modifier having at least one face that is sloped with respect to the direction of the beam such that the attenuated beam is of an energy to form an irradiated region of a selected depth, thickness, and dosage gradient in the gating portion of the thyristor; masking at least part of the conducting portions of the thyristor against irradiation from said radiation source; and irradiating the selected surface of the thyristor with the unmasked portions of the attenuated beam to form an irradiated region in the gating portion having a selected thickness, dosage and dosage gradient in the gating portion at a selected depth in the gating portions of the thyristor.
Claim 87
Dependent Claim
37 words
A method of changing the electrical characteristics of a thyristor as set forth in claim 78 comprising in addition: moving the beam modifier and thyristor relative to each other through a predetermined motion during the irradiation step.
Claim 88
Dependent Claim
32 words
A method of changing the electrical characteristics of a thyristor as set forth in claim 79 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 89
Dependent Claim
25 words
A method of changing the electrical characteristics of a thyristor as set forth in claim 79 wherein the radiation source is a substantially monoenergetic source.
Claim 90
Dependent Claim
32 words
A method of changing the electrical characteristics of a thyristor as set forth in claim 81 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 91
Dependent Claim
35 words
A method of changing the electrical characteristics of a thyristor as set forth in claim 78 wherein the selected surface of thyristor through which irradiation is performed is adjacent a cathod-emitter region of the thyristor.
Claim 92
Dependent Claim
45 words
A method of changing the electrical characteristics of a thyristor as set forth in claim 78 wherein the irradiated region formed in the gating portion of the thyristor is at least in part adjacent a PN junction between cathode-base and anode-base regions of the thyristor.
Claim 93
Dependent Claim
36 words
A method of changing the electrical characteristics of a thyristor as set forth in claim 78 wherein the irradiated region in the gating portion adjacent a PN junction between anode-base and anode-emitter regions of the thyristor.
Claim 94
Dependent Claim
145 words
A semiconductor device having an irradiation region of selected thickness, dosage and dosage gradient as selected depth from a selected surface, said device constructed by: providing a radiation beam having particles with molecular weight of at least one with sufficient energy to penetrate the material through the selected surface and beyond the maximum depth of the irradiated region; attenuating said radiation beam with a beam modifier having at least one face that is sloped with respect to the direction of the beam such that the attenuated beam is of an energy to form an irradiated region of a selected depth, thickness, and dosage gradient in the material; and irradiating the selected surface of the material with the attenuated beam to form a nuclear irradiation region of defect generation at a selected depth in the material, said region having a selected thickness, dosage and dosage gradient.
Claim 95
Dependent Claim
145 words
A semiconductor device having an irradiation region of selected thickness, dosage and dosage gradient as selected depth from a selected surface, said device constructed by: providing a radiation beam having particles with molecular weight of at least one with sufficient energy to penetrate the material through the selected surface and beyond the maximum depth of the irradiated region; attenuating said radiation beam with a beam modifier having at least one face that is sloped with respect to the direction of the beam such that the attenuated beam is of an energy to form an irradiated region of a selected depth, thickness, and dosage gradient in the material; and irradiating the selected surface of the material with the attenuated beam to form a nuclear irradiation region of defect generation at a selected depth in the material, said region having a selected thickness, dosage and dosage gradient.
Claim 96
Dependent Claim
49 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 86 comprising in addition: moving the beam modifier and the semiconductor device relative to each other through a predetermined motion during the irradiation step.
Claim 97
Dependent Claim
42 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 87 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 98
Dependent Claim
35 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 87 wherein the radiation source is a substantially monoenergetic source.
Claim 99
Dependent Claim
42 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 89 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 100
Dependent Claim
44 words
A semiconductor device having an irradiated region a given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 86 with the additional step of: masking selected portions of the semiconductor device against irradiation from said radiation source.
Claim 101
Dependent Claim
42 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 91 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 102
Dependent Claim
35 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 91 wherein the radiation source is a substantially monoenergetic source.
Claim 103
Dependent Claim
42 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 89 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 104
Dependent Claim
53 words
A semiconductor device having an irradiation region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 86 with the additional step of: annealing the semiconductor device to reduce sensitivity of electrical characteristics of the irradiated protion of the device to changes in operating temperature.
Claim 105
Dependent Claim
42 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 95 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 106
Dependent Claim
35 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 95 wherein the radiation source is a substantially monoenergetic source.
Claim 107
Dependent Claim
42 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 96 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 108
Dependent Claim
44 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 95 with the additional step of: masking selected portions of the semiconductor device against irradiation from said radiation source.
Claim 109
Dependent Claim
42 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 99 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 110
Dependent Claim
35 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 99 wherein the radiation source is a substantially monoenergetic source.
Claim 111
Dependent Claim
42 words
A semiconductor device having an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 101 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 112
Dependent Claim
187 words
A thyristor having in gating portions thereof an irradiated region of selected thickness, dosage and dosage gradient at a selected depth from a selected surface, said thyristor constructed by: providing a radiation beam from a radiation source, said beam having particles with molecular weight of at least one with sufficient energy to penetrate the thyristor through the selected surface to beyond the maximum depth of the irradiated region; attenuating the radiation beam with a beam modifier having at least one face that is sloped with respect to the direction of the beam such that the attenuated beam is of an energy to form an irradiated region of a selected depth, thickness, and dosage gradient in the gating portion of the thyristor; masking at least part of the conducting portions of the thyristor against irradiation from said radiation source; and irradiating the selected surface of the thyristor with the unmasked portions of the attenuated beam to form an irradiation at a selected depth in the gating portions of the thyristor, said region in the gating portion having a selected thickness, dosage and dosage gradient in the gating portion.
Claim 113
Dependent Claim
187 words
A thyristor having in gating portions thereof an irradiated region of selected thickness, dosage and dosage gradient at a selected depth from a selected surface, said thyristor constructed by: providing a radiation beam from a radiation source, said beam having particles with molecular weight of at least one with sufficient energy to penetrate the thyristor through the selected surface to beyond the maximum depth of the irradiated region; attenuating the radiation beam with a beam modifier having at least one face that is sloped with respect to the direction of the beam such that the attenuated beam is of an energy to form an irradiated region of a selected depth, thickness, and dosage gradient in the gating portion of the thyristor; masking at least part of the conducting portions of the thyristor against irradiation from said radiation source; and irradiating the selected surface of the thyristor with the unmasked portions of the attenuated beam to form an irradiation at a selected depth in the gating portions of the thyristor, said region in the gating portion having a selected thickness, dosage and dosage gradient in the gating portion.
Claim 114
Dependent Claim
49 words
A thyristor having in gating portions thereof an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface as set forth in claim 103 comprising in addition: moving the beam modifier and the semiconductor device relative to each other through a predetermined motion.
Claim 115
Dependent Claim
45 words
A thyristor having in gating portions thereof an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 104 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 116
Dependent Claim
38 words
A thyristor having in gating portions thereof an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 104 wherein the radiation source is a substantially monenergetic source.
Claim 117
Dependent Claim
45 words
A thyristor having in gating portions thereof an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 106 wherein the radiation source is selected from the group consisting of proton and alpha particle sources.
Claim 118
Dependent Claim
49 words
A thyristor having in gating portions thereof an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 104 wherein the selected surface of the thyristor through which irradiation is performed is adjacent a cathode-emitter region of the thyristor.
Claim 119
Dependent Claim
58 words
A thyristor having in gating portions thereof an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 104 wherein the irradiated portion formed in the gating portion of the thyristor is at least in part adjacent the PN junction between cathode-base and anode-base regions of the thyristor.
Claim 120
Dependent Claim
50 words
A thyristor having in gating portions thereof an irradiated region of given thickness, dosage and dosage gradient a given distance from a selected surface prepared according to claim 104 wherein the irradiated portion formed in the gating portion adjacent the PN junction between anode-base and anode-emitter regions of the thyristor.
References Cited (Backward Citations)
GB886232A
Cited
US3718502A
Cited
US3897276A
Cited
US3967982A
Cited
US4025365A
Cited
US4014718A
Cited
US4043837A
Cited
US4035655A
Cited
US3924136A
Cited
US4021837A
Cited
US4118251A
Cited
US4056408A
Cited
US4047976A
Cited
US4098917A
Cited
US4137457A
Cited
US4111720A
Cited
US4134778A
Cited
US4145233A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-07-13 | 1985-01-12 | 1985-07-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-07-13 | 1989-01-12 | 1989-07-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-07-13 | 1993-01-12 | 1993-07-14 | $7700.00 | Window Closed / Lapsed |