US3967982A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of doping a semiconductor layer
Assignee: Siemens AG
•
Filing: 1975-07-11
•
Granted: 1976-07-06
•
Expires: 1995-07-11
Abstract
Abstract A semiconductor layer, such as an epitaxial layer on a suitable substrate is subjected to controlled bombardment by neutrons whereby the atoms of the semiconductor layer are converted via nuclear reaction into doping material atoms.
Inventors
- 👤 Heinz-Herbert Arndt
- 👤 Joachim Burtscher
- 👤 Gustav Fischer
- 👤 Ernst Haas
- 👤 Joachim Martin
- 👤 Gunter Raab
- 👤 Manfred Schnoeller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:31
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10P34/00; H10P34/20; Y; Y10; Y10S; Y10S148/00; Y10S148/165
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
42 words
A method of doping a semiconductor layer arranged on a substrate with a dopant substance comprising: subjecting said semiconductor layer to controlled bombardment by neutrons so that atoms of said semiconductor layer are converted by a nuclear reaction into dopant substance atoms.
Claim 2
Independent Claim
42 words
A method of doping a semiconductor layer arranged on a substrate with a dopant substance comprising: subjecting said semiconductor layer to controlled bombardment by neutrons so that atoms of said semiconductor layer are converted by a nuclear reaction into dopant substance atoms.
Claim 3
Dependent Claim
41 words
A method as defined in claim 1 wherein said semiconductor layer is composed of silicon and said dopant substance is composed of phosphorus so that the nuclear reaction: .sub.14 Si.sup.30 + n → .sub.14 Si.sup.31 +γ→ .sub.15 P.sup.31 +β.sup.- takes place.
Claim 4
Dependent Claim
65 words
A method as defined in claim 1 wherein said semiconductor layer is composed of an A III B V compound and a nuclear reaction selected from the group consisting of: .sub.31 Ga.sup.69 + n → .sub.31 Ga.sup.70 → .sub.32 Ge.sup.70 β.sup.-; .sub.31 Ga.sup.71 + n → .sub.31 Ga.sup.72 → .sub.32 Ge.sup.72 +β.sup.-; .sub.33 As.sup.75 + n → .sub.33 As.sup.76 → .sub.34 Se.sup.76 +β.sup.- takes place.
Claim 5
Dependent Claim
47 words
A method as defined in claim 1 wherein said semiconductor layer is composed of gallium phosphide and the nuclear reactions: Ga.sup.69 + n → Ga.sup.70 → Ge.sup.70 +β.sup.-; Ga.sup.71 + n → Ga.sup.72 → Ge.sup.72 +β.sup.-; and P.sup.31 + n → P.sup.32 → S.sup.32 +β.sup.- take place.
Claim 6
Dependent Claim
41 words
A method as defined in claim 1 wherein said semiconductor layer is composed of Ge and said dopant substance is composed of As so that the nuclear reaction: .sub.32 Ge.sup.74 + n - .sub.32 Ge.sup.75 - .sub.33 As.sup.75 +β.sup.- takes place.
Claim 7
Dependent Claim
13 words
A method as defined in claim 1 wherein said neutrons are thermal neutrons.
Claim 8
Dependent Claim
23 words
A method as defined in claim 6 wherein said thermal neutrons have an energy in the range of about 0.025 to 0.3 eV.
Claim 9
Dependent Claim
17 words
A method as defined in claim 1 wherein said semiconductor layer is epitaxially deposited on a substrate.
Claim 10
Dependent Claim
14 words
A method as defined in claim 8 wherein said substrate is a silicon base.
Claim 11
Dependent Claim
32 words
A method as defined in claim 9 wherein said silicon base is composed of silicon doped with a material selected from the group consisting of Sb, As P, B and mixtures thereof.
Claim 12
Dependent Claim
20 words
A method as defined in claim 9 wherein said silicon base is composed of silicon doped with B 11 .
Claim 13
Dependent Claim
19 words
A method as defined in claim 8 wherein said substrate is a sapphire (Al 2 O 3 ) base.
Claim 14
Dependent Claim
19 words
A method as defined in claim 8 wherein said substrate is a spinel (MgAl 2 O 4 ) base.
Claim 15
Dependent Claim
54 words
A method as defined in claim 1 wherein a masking layer having at least one window therein is applied onto a free surface of said semiconductor layer prior to subjecting such layer to controlled bombardment by neutrons so that localized doping of the surface area of said semiconductor layer below said window takes place.
Claim 16
Dependent Claim
15 words
A method as defined in claim 14 wherein said masking layer is a cadmium foil.
Claim 17
Dependent Claim
16 words
A method as defined in claim 14 wherein said masking layer is a gadolinium lacquer layer.
References Cited (Backward Citations)
GB886232A
Cited
US3733222A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-07-06 | 1980-01-05 | 1980-07-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-07-06 | 1984-01-05 | 1984-07-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-07-06 | 1988-01-05 | 1988-07-06 | $7700.00 | Window Closed / Lapsed |