US4292729A
Expired / Lapsed
US
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Electron-beam programmable semiconductor device structure
Assignee: Motorola Solutions Inc
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Filing: 1979-08-23
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Granted: 1981-10-06
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Expires: 1999-08-23
Abstract
Abstract A semiconductor device structure is provided in which an electrically isolated or "floating" conductor is adapted to receive electric charge from an electron beam. The resultant stored charge provides the basis for useful electronic functions such as floating gate MOS read-only-memories.
Inventors
- 👤 Michael W. Powell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:05
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; G; G11; G11C; G11C13/00; G11C13/04; G11C13/047; G11C17/00; G11C17/08; G11C17/10; G11C17/12; G11C5/00; G11C5/06; G11C5/066; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; Y; Y10; Y10S; Y10S148/00; Y10S148/141
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
87 words
A method for manufacturing a semiconductor device comprising the steps of: providing a semiconductor substrate; providing a conductive region isolated from said substrate and capable of storing charge from an electron beam; forming an insulator layer overlying said conductive region and adapted to allow penetration of electrons from said electron beam; forming a registration element in said substrate, said registration element allowing registration between said conductive region and said electron beam; and charging said conductive region with an electron beam to alter operation of said semiconductor device.
Claim 2
Independent Claim
87 words
A method for manufacturing a semiconductor device comprising the steps of: providing a semiconductor substrate; providing a conductive region isolated from said substrate and capable of storing charge from an electron beam; forming an insulator layer overlying said conductive region and adapted to allow penetration of electrons from said electron beam; forming a registration element in said substrate, said registration element allowing registration between said conductive region and said electron beam; and charging said conductive region with an electron beam to alter operation of said semiconductor device.
Claim 3
Independent Claim
177 words
A method for manufacturing an electron beam programmable insulated gate field effect transistor array which comprises the steps of: providing a semiconductor substrate; forming spaced apart source and drain regions in said substrate; forming a first insulator layer overlying portions of said substrate positioned between said spaced apart source and drain region; forming gate electrodes overlying said first insulator layer and electrically isolated from said substrate and from said source and drain regions, field effect transistors being formed by said gate electrodes and said source and drain regions; forming a second insulator layer overlying said gate electrodes and being of a thickness to allow penetration of electrons from an electron beam to said gate electrodes; forming a registration element on said substrate for accurately positioning an electron beam with respect to selected ones of said gate electrodes; programming said array by directing an electron beam to selected ones of said gate electrodes, electrons from said electron beam being stored on said selected gate electrodes and electrically altering said field effect transistors formed by said selected gate electrodes.
Claim 4
Independent Claim
177 words
A method for manufacturing an electron beam programmable insulated gate field effect transistor array which comprises the steps of: providing a semiconductor substrate; forming spaced apart source and drain regions in said substrate; forming a first insulator layer overlying portions of said substrate positioned between said spaced apart source and drain region; forming gate electrodes overlying said first insulator layer and electrically isolated from said substrate and from said source and drain regions, field effect transistors being formed by said gate electrodes and said source and drain regions; forming a second insulator layer overlying said gate electrodes and being of a thickness to allow penetration of electrons from an electron beam to said gate electrodes; forming a registration element on said substrate for accurately positioning an electron beam with respect to selected ones of said gate electrodes; programming said array by directing an electron beam to selected ones of said gate electrodes, electrons from said electron beam being stored on said selected gate electrodes and electrically altering said field effect transistors formed by said selected gate electrodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-10-05 | 1985-04-06 | 1985-10-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-10-05 | 1989-04-06 | 1989-10-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-10-05 | 1993-04-06 | 1993-10-06 | $7700.00 | Window Closed / Lapsed |