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US4581628A Expired / Lapsed US ⏱️ 0.0 years remaining

Circuit programming by use of an electrically conductive light shield

Assignee: Hitachi Ltd
•
Filing: 1982-09-27
•
Granted: 1986-04-08
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Expires: 2002-09-27
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Abstract

Abstract The present invention consists in a semiconductor integrated circuit device characterized in that a circuit programming wiring layer is formed on an insulating film which is provided on a semiconductor substrate, and that a light shielding protective mask material is deposited around the circuit programming wiring layer except a program part thereof, through an insulating film.

Inventors

  • 👤 Tateoki Miyauchi
  • 👤 Mikio Hongo
  • 👤 Masao Mitani
  • 👤 Isao Tanabe
  • 👤 Toshiaki Masuhara

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 17:54
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; H10W20/492; H10W42/00; H10W42/20

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 158 words
A semiconductor integrated circuit device comprising: a semiconductor body; a lower insulating film disposed on the semiconductor body; a circuit programming wiring layer disposed on the lower insulating film; an upper insulating film disposed on said circuit programming wiring layer; a light shielding protective mask material disposed on said upper insulating film and above said circuit programming wiring layer except for a program part thereof which is to be eliminated by a light source used for programming said program part, the protective mask material being disposed adjacent an upper wiring portion, said protective mask material being divided into at least two electrically conductive parts which are separated and electrically insulated from each other with a boundary at a window of said program part of said wiring layer, said divided parts being also electrically insulated from said upper wiring portion; and a film disposed on said protective mask material and the upper wiring portion and the upper insulating film.
Claim 2
Dependent Claim 158 words
A semiconductor integrated circuit device comprising: a semiconductor body; a lower insulating film disposed on the semiconductor body; a circuit programming wiring layer disposed on the lower insulating film; an upper insulating film disposed on said circuit programming wiring layer; a light shielding protective mask material disposed on said upper insulating film and above said circuit programming wiring layer except for a program part thereof which is to be eliminated by a light source used for programming said program part, the protective mask material being disposed adjacent an upper wiring portion, said protective mask material being divided into at least two electrically conductive parts which are separated and electrically insulated from each other with a boundary at a window of said program part of said wiring layer, said divided parts being also electrically insulated from said upper wiring portion; and a film disposed on said protective mask material and the upper wiring portion and the upper insulating film.
Claim 3
Dependent Claim 20 words
A semiconductor integrated circuit device as in claim 1, which in said circuit programming wiring layer comprises a metallization layer.
Claim 4
Dependent Claim 18 words
A semiconductor integrated circuit device as in claim 2, in which said metallization layer comprises a poly-si layer.

References Cited (Backward Citations)

US3771026A Cited
US3792319A Cited
US4261004A Cited
US4272775A Cited
US4228451A Cited
US4455495A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-04-07 1989-10-07 1990-04-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-04-07 1993-10-07 1994-04-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-04-07 1997-10-07 1998-04-08 $7700.00 Window Closed / Lapsed

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