US4751197A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Make-link programming of semiconductor devices using laser enhanced thermal breakdown of insulator
Assignee: Texas Instruments Inc
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Filing: 1986-09-24
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Granted: 1988-06-14
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Expires: 2006-09-24
Abstract
Abstract A semiconductor device is programmed by a laser beam which causes an insulator between two conductors on a silicon substrate to be permanently altered, as by breakdown of the insulator. The conductors may be metals such as aluminum or tungsten, and the insulator is a layer of deposited or thermal silicon oxide. The breakdown may be enhanced by voltage applied between the conductors while the laser beam is focused on the structure.
Inventors
- 👤 Kendall S. Wills
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 10:54
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; H10W20/492; H10W20/01; H10W20/031; H10W20/067; H10W20/068; Y; Y10; Y10S; Y10S148/00; Y10S148/055
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
133 words
A method of making a laser beam programmable semiconductor device, comprising the steps of: forming a conductive region in a semiconductor body at a face thereof; forming an insulative coating on said face of said semiconductor body overlaying a portion of said conductive region; opening a steep-walled hole in said insulative coating so as to expose said conductive region at the bottom thereof; forming a conformal coating of polycrystalline silicon covering the sides and bottom of said steep-walled hole; forming a conductive layer overlaying said insulative coating and said coating of polycrystalline silicon; and exposing the area of said conductive layer overlaying said steep-walled hole to a laser beam; wherein said polycrystalline silicon is rendered conductive by said laser beam to create a conductive path between said conductive region and said conductive layer.
Claim 2
Independent Claim
133 words
A method of making a laser beam programmable semiconductor device, comprising the steps of: forming a conductive region in a semiconductor body at a face thereof; forming an insulative coating on said face of said semiconductor body overlaying a portion of said conductive region; opening a steep-walled hole in said insulative coating so as to expose said conductive region at the bottom thereof; forming a conformal coating of polycrystalline silicon covering the sides and bottom of said steep-walled hole; forming a conductive layer overlaying said insulative coating and said coating of polycrystalline silicon; and exposing the area of said conductive layer overlaying said steep-walled hole to a laser beam; wherein said polycrystalline silicon is rendered conductive by said laser beam to create a conductive path between said conductive region and said conductive layer.
Claim 3
Dependent Claim
22 words
A method according to claim 1 including the step of forming a barrier layer between said polycrystalline silicon and said conductive region.
Claim 4
Dependent Claim
14 words
A method according to claim 2 wherein said barrier layer is a refractory metal.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-06-14 | 1991-12-14 | 1992-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-06-14 | 1995-12-14 | 1996-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-06-14 | 1999-12-14 | 2000-06-14 | $7700.00 | Window Closed / Lapsed |