US4146902A
Expired / Lapsed
US
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Irreversible semiconductor switching element and semiconductor memory device utilizing the same
Assignee: NTT Inc
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Filing: 1978-06-20
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Granted: 1979-03-27
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Expires: 1998-06-20
Abstract
Abstract A semiconductor switching element comprised by a high resistivity polycrystalline silicon resistor whose resistance irreversibly decreases to a small value at a threshold voltage upon the voltage across the resistor reaching the threshold voltage. A semiconductor memory device is constituted by using the switching element as a memory cell and a semiconductor gate element for controlling the current flowing through the semiconductor switching element.
Inventors
- 👤 Masafumi Tanimoto
- 👤 Takashi Watanabe
- 👤 Nobuaki Ieda
- 👤 Junichi Murota
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 07:35
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/35; G11C17/00; G11C17/14; G11C17/16; H; H01; H01C; H01C7/00; H01C7/10; H01C7/1013; H10; H10B; H10B20/00; H10B20/20; H10B20/25; H10B63/00; H10B63/30; H10D; H10D1/00; H10D1/40; H10D1/47; H10D48/00; H10D48/30; H10D48/32; H10D48/366; H10N; H10N70/00; H10N70/011; H10N70/021; H10N70/023; H10N70/20; H10N70/25; H10N70/801; H10N70/821; H10N70/826; H10N70/881; H10N70/884; H10P; H10P32/00; H10P32/30; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
176 words
A semiconductor switching element having an irreversible conductivity characteristic comprising a high resistivity thin polycrystalline silicon resistor layer having a resistivity of from 10 4 to 10 7 ohm-cm and a thickness of from 0.15 to 1 microns and terminal electrode means formed on opposite planar surfaces on said thin silicon resistor layer for applying operating voltage across the thickness of said thin polycrystalline silicon resistor layer and establishing a current path therethrough, the resistance of said thin polycrystalline silicon resistor layer switching irreversibly in a non-destructive manner to a lower value upon the magnitude of an applied operating voltage exceeding a predesigned threshold voltage value of the order from 8 to 25 volts at which the resistance of the resistor layer switches irreversibly to the lower value to thereby provide a manyfold increase of at least an order of magnitude in the current flowing through the thin polycrystalline silicon resistor layer upon the application of a read voltage less than said threshold voltage value across the terminal electrode of the thin polycrystalline silicon resistor layer.
Claim 2
Dependent Claim
176 words
A semiconductor switching element having an irreversible conductivity characteristic comprising a high resistivity thin polycrystalline silicon resistor layer having a resistivity of from 10 4 to 10 7 ohm-cm and a thickness of from 0.15 to 1 microns and terminal electrode means formed on opposite planar surfaces on said thin silicon resistor layer for applying operating voltage across the thickness of said thin polycrystalline silicon resistor layer and establishing a current path therethrough, the resistance of said thin polycrystalline silicon resistor layer switching irreversibly in a non-destructive manner to a lower value upon the magnitude of an applied operating voltage exceeding a predesigned threshold voltage value of the order from 8 to 25 volts at which the resistance of the resistor layer switches irreversibly to the lower value to thereby provide a manyfold increase of at least an order of magnitude in the current flowing through the thin polycrystalline silicon resistor layer upon the application of a read voltage less than said threshold voltage value across the terminal electrode of the thin polycrystalline silicon resistor layer.
Claim 3
Dependent Claim
85 words
The semiconductor switching element according to claim 1 wherein the high resistivity polycrystalline silicon resistor layer is comprised of undoped polycrystalline semiconductor having a thickness of from 0.15 to 1 micrometers and the terminal electrode means is comprised of heavily doped semiconductor layers with the polycrystalline silicon resistor layer and the heavily doped semiconductor terminal electrode layers being separated by SiO 2 insulator layers having openings therein through which the undoped polycrystalline silicon resistor layer and heavily doped semiconductor terminal electrode layers contact each other.
Claim 4
Dependent Claim
49 words
The semiconductor switching element according to claim 2 wherein the thin high resistivity polycrystalline silicon resistor layer and terminal electrode layers are fabricated by chemical vapour deposition technique and are formed on a common substrate with a semiconductor gate element with which the switching element is used in practice.
Claim 5
Dependent Claim
50 words
A semiconductor memory device including a memory cell comprising a semiconductor switching element constituted by a high resistivity polycrystalline silicon resistor according to claim 3, and the semiconductor gate element is connected in series electrical circuit relationship with said switching element for controlling the current flowing through said switching element.
Claim 6
Dependent Claim
48 words
The semiconductor memory device according to claim 4 wherein said semiconductor switching element and said semiconductor gate element are incorporated into a semiconductor integrated circuit fabricated by chemical vapour deposition technique, and wherein said semiconductor switching element is formed vertically above an electrode of said semiconductor gate element.
Claim 7
Dependent Claim
39 words
The semiconductor switching element according to claim 1 wherein the threshold voltage value of said silicon resistor at which the resistance value of the resistor switches irreversibly, is varied by varying the thickness of the polycrystalline silicon resistor layer.
Claim 8
Dependent Claim
30 words
The semiconductor switching element according to claim 1 wherein said threshold voltage value is varied by varying the initial value of the resistivity of said thin polycrystalline silicon resistor layer.
Claim 9
Dependent Claim
35 words
The semiconductor switching element according to claim 1 wherein said threshold voltage is varied by varying the growth temperature of the polycrystalline silicon resistor layer while it is being grown by chemical vapour deposition technique.
Claim 10
Dependent Claim
49 words
A semiconductor memory device including a memory cell comprising a semiconductor switching element constituted by a high resistivity polycrystalline silicon resistor according to claim 1, and a semiconductor gate element connected in series electrical circuit relationship with said switching element for controlling the current flowing through said switching element.
Claim 11
Dependent Claim
18 words
The semiconductor memory device according to claim 9 wherein said semiconductor gate element comprises a field effect transistor.
Claim 12
Dependent Claim
23 words
The semiconductor memory device according to claim 9 wherein said semiconductor gate element comprises a three terminal semiconductor element having a gate electrode.
Claim 13
Dependent Claim
45 words
The semiconductor memory device according to claim 10 wherein the drain and gate electrodes of said field effect transistor are commonly connected to a word line, while the source electrode of said effect transistor is connected to a digit line through said semiconductor switching element.
Claim 14
Dependent Claim
48 words
The semiconductor memory device according to claim 10 wherein the drain electrode of said field effect transistor is connected to a word line through said semiconductor switching element, the source electrode is connected to a digit line and the gate electrode is connected to a timing signal source.
Claim 15
Dependent Claim
43 words
The semiconductor memory device according to claim 10 wherein the gate electrode of said field effect transistor is connected to a word line, the drain electrode to a voltage source, and the source electrode to a digit line through said semiconductor switching element.
Claim 16
Dependent Claim
44 words
The semiconductor memory device according to claim 10 wherein the gate electrode of said field effect transistor is connected to a word line, the source electrode to a digit line, and the drain electrode to a source of voltage through said semiconductor switching element.
Claim 17
Dependent Claim
47 words
The semiconductor memory device according to claim 9 wherein said semiconductor switching element and said semiconductor gate element are incorporated into a semiconductor integrated circuit fabricated by chemical vapour deposition technique and said semiconductor switching element is formed vertically above an electrode of said semiconductor gate element.
Claim 18
Dependent Claim
52 words
The semiconductor memory device according to claim 16 wherein the lower terminal electrode means of said semiconductor switching element is formed vertically above an electrode of said semiconductor gate element and the said electrode of the semiconductor gate element and the said lower terminal electrode means are comprised by a common layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-03-26 | 1982-09-25 | 1983-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-03-26 | 1986-09-25 | 1987-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-03-26 | 1990-09-25 | 1991-03-27 | $7700.00 | Window Closed / Lapsed |