US4536249A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit processing methods
Assignee: Plessey Semiconductors Ltd
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Filing: 1984-04-06
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Granted: 1985-08-20
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Expires: 2004-04-06
Abstract
Abstract An integrated circuit processing method comprises the formation on a substrate of a metallized conductor pattern. A layer of insulating material is formed over the conductor pattern and a mask is superimposed thereon. The mask is resistant to plasma etching and is provided at predetermined positions with apertures defining required void outlines. Plasma etching through the mask forms vias in the insulating layer which communicate with the metallized conductor pattern. The mask is removed to leave the integrated circuit with communicating vias which enable connection to the conductor pattern.
Inventors
- 👤 Stephen J. Rhodes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:03
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10W20/01; H10W20/071; H10W20/081; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/95
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
140 words
An integrated circuit processing method, comprising the steps of: providing on a substrate a first metallised conductor pattern, forming a layer of an insulating material over the first conductor pattern, coating the insulating layer with a parting layer of a material which is soluble in a solvent which does not damage the insulating layer or the conductor pattern, depositing over the parting layer a masking layer which is resistant to plasma etching, forming apertures in the masking layer at predetermined positions to define required via outlines, plasma etching through the masking layer to form vias in the insulating layer communicating with the first metallised conductor pattern, removing the masking layer by exposing the parting layer to the solvent, and forming onto the insulating layer a second level metallised conductor pattern to communicate with the first conductor pattern in the via.
Claim 2
Dependent Claim
140 words
An integrated circuit processing method, comprising the steps of: providing on a substrate a first metallised conductor pattern, forming a layer of an insulating material over the first conductor pattern, coating the insulating layer with a parting layer of a material which is soluble in a solvent which does not damage the insulating layer or the conductor pattern, depositing over the parting layer a masking layer which is resistant to plasma etching, forming apertures in the masking layer at predetermined positions to define required via outlines, plasma etching through the masking layer to form vias in the insulating layer communicating with the first metallised conductor pattern, removing the masking layer by exposing the parting layer to the solvent, and forming onto the insulating layer a second level metallised conductor pattern to communicate with the first conductor pattern in the via.
Claim 3
Dependent Claim
13 words
A method as claimed in claim 1, wherein the insulating layer is polyimide.
Claim 4
Dependent Claim
15 words
A method as claimed in claim 2, wherein the insulating layer is applied by spinning.
Claim 5
Dependent Claim
19 words
A method as claimed in claim 1, wherein the apertures are formed in the masking layer by photo engraving.
Claim 6
Dependent Claim
41 words
A method as claimed in claim 1, comprising the subsequent steps of: similarly forming one or more additional insulating layers with vias and conductor patterns which communicate via the voids with one or more of the other level metallised conductor patterns.
Claim 7
Dependent Claim
14 words
A method as claimed in claim 1, wherein the parting layer is a polymer.
Claim 8
Dependent Claim
14 words
A method as claimed in claim 1, wherein the parting layer is a photoresist.
Claim 9
Dependent Claim
12 words
A method as claimed in claim 7, wherein the solvent is acetone.
Claim 10
Dependent Claim
16 words
A method as claimed in claim 1, wherein the masking layer is formed from a metal.
Claim 11
Dependent Claim
12 words
A method as claimed in claim 9, wherein the metal is aluminum.
Claim 12
Dependent Claim
15 words
A method as claimed in claim 10, wherein the metal layer is deposited by sputtering.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-08-19 | 1989-02-18 | 1989-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-08-19 | 1993-02-18 | 1993-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-08-19 | 1997-02-18 | 1997-08-20 | $7700.00 | Window Closed / Lapsed |