Patent US6607974B2 successfully refreshed from Google Patents.
US6607974B2
Expired / Lapsed
US
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Method of forming a contact structure in a semiconductor device
Assignee: Round Rock Research LLC
•
Filing: 2001-12-14
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Granted: 2003-08-19
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Expires: 2021-12-14
Abstract
Abstract Annular and linear contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.
Inventors
- 👤 Steven T. Harshfield
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:37
CPC Classifications
H; H10; H10N; H10N70/00; H10N70/801; H10N70/821; H10N70/20; H10N70/231; H10N70/011; H10N70/061; H10N70/068; H10N70/826; H10N70/8265; H10N70/841; H10N70/8418; H10N70/881; H10N70/882; H10N70/8828; H10B; H10B63/00; H10B63/80; H10B63/82
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
149 words
A method of forming a contact structure in a semiconductor device comprising: providing a substrate with a conductive region; forming a first insulative layer on said conductive region; forming a contact hole in said first insulative layer exposing at least a portion of said conductive region, said contact hole having a bottom surface and a sidewall surface; forming a layer of material on said bottom surface and said sidewall surface, said layer of material partially filling said contact hole, wherein said material comprises one of a conductive material and a memory material; forming a second insulative layer on said layer of material and filling said contact hole; and removing a portion of said second insulative layer and a portion of said layer of material disposed outside of the contact hole to form a contact structure comprising only a peripheral portion of said layer of material within said contact hole.
Claim 2
Independent Claim
149 words
A method of forming a contact structure in a semiconductor device comprising: providing a substrate with a conductive region; forming a first insulative layer on said conductive region; forming a contact hole in said first insulative layer exposing at least a portion of said conductive region, said contact hole having a bottom surface and a sidewall surface; forming a layer of material on said bottom surface and said sidewall surface, said layer of material partially filling said contact hole, wherein said material comprises one of a conductive material and a memory material; forming a second insulative layer on said layer of material and filling said contact hole; and removing a portion of said second insulative layer and a portion of said layer of material disposed outside of the contact hole to form a contact structure comprising only a peripheral portion of said layer of material within said contact hole.
Claim 3
Dependent Claim
16 words
The method of claim 1 , wherein said first and second insulative layers comprise silicon dioxide.
Claim 4
Dependent Claim
13 words
The method of claim 1 , wherein said contact hole is a trench.
Claim 5
Dependent Claim
31 words
The method of claim 1 , wherein said material comprises said conductive material and said conductive material comprises at least one of carbon, titanium-nitride, titanium, aluminum, tungsten, tungsten silicide, and copper.
Claim 6
Dependent Claim
17 words
The method of claim 1 , wherein said step of removing comprises a chemical-mechanical polishing (CMP) process.
Claim 7
Dependent Claim
25 words
The method of claim 5 , wherein said CMP process completely removes a portion of second insulative layer which is not within said contact hole.
Claim 8
Dependent Claim
21 words
The method of claim 1 , wherein at least one of said steps of forming comprise a chemical vapor deposition process.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-08-18 | 2007-02-17 | 2007-08-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-08-18 | 2011-02-17 | 2011-08-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-08-18 | 2015-02-17 | 2015-08-19 | $7700.00 | Window Closed / Lapsed |