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US6169028B1
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Method fabricating metal interconnected structure
Assignee: Intellectual Ventures Holding 81 LLC
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Filing: 1999-01-26
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Granted: 2001-01-02
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Expires: 2019-01-26
Abstract
Abstract A method for fabricating a metal interconnect structure. A semiconductor substrate comprising a conductive layer therein is provided. A dielectric layer is formed on the semiconductor substrate. A part of the dielectric layer is removed to form a dual damascene opening and a trench therein, wherein the dual damascene opening exposes the conductive layer. The trench is larger than the dual damascene opening. A conformal barrier layer is formed on the dielectric layer. A conformal metal layer is formed on the barrier layer to fill the dual damascene opening and to partially fill the trench. The metal layer positioned in the trench has a thickness equal to the depth of the trench. A conformal cap layer is formed on the metal layer. A CMP process is performed to remove the cap layer, the metal layer and the barrier layer outside the trench and outside the dual damascene opening.
Inventors
- 👤 Kun-Chih Wang
- 👤 Ming-Sheng Yang
- 👤 Wen-Yi Hsieh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:46
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/062; H10P; H10P52/00; H10P52/40; H10P52/403; H10W20/071; H10W20/081; H10W20/084
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
163 words
A method for fabricating a metal interconnect structure, comprising the steps of: providing a semiconductor substrate, wherein the semiconductor substrate comprises a conductive layer formed therein; forming a dielectric layer on the semiconductor substrate; removing a part of the dielectric layer to form a dual damascene opening exposing the conductive layer and to form a trench in the dielectric layer; forming a conformal barrier layer on the dielectric layer; forming a copper layer on the barrier layer, wherein a part of the copper layer positioned in the trench has a thickness equal to a depth of the trench; forming a cap layer on the copper layer; removing a part of the cap layer and a part of the copper layer until the barrier layer is exposed; and removing a part of the copper layer, the exposed barrier layer, and a remaining part of the cap layer that are outside the trench and the dual damascene opening, so that the dielectric layer is exposed.
Claim 2
Independent Claim
163 words
A method for fabricating a metal interconnect structure, comprising the steps of: providing a semiconductor substrate, wherein the semiconductor substrate comprises a conductive layer formed therein; forming a dielectric layer on the semiconductor substrate; removing a part of the dielectric layer to form a dual damascene opening exposing the conductive layer and to form a trench in the dielectric layer; forming a conformal barrier layer on the dielectric layer; forming a copper layer on the barrier layer, wherein a part of the copper layer positioned in the trench has a thickness equal to a depth of the trench; forming a cap layer on the copper layer; removing a part of the cap layer and a part of the copper layer until the barrier layer is exposed; and removing a part of the copper layer, the exposed barrier layer, and a remaining part of the cap layer that are outside the trench and the dual damascene opening, so that the dielectric layer is exposed.
Claim 3
Dependent Claim
18 words
The method according to claim 1 , wherein the cap layer has a thickness of about 300-1000 Å.
Claim 4
Dependent Claim
28 words
The method according to claim 1 , wherein a material of the cap layer is selected from a group consisting of silicon oxide, silicon nitride and tantalum nitride.
Claim 5
Dependent Claim
17 words
The method according to claim 1 , wherein the step of forming the copper layer includes electrode-plating.
Claim 6
Dependent Claim
19 words
The method according to claim 1 , wherein the step of forming the copper layer includes chemical vapor deposition.
Claim 7
Dependent Claim
18 words
The method according to claim 1 , wherein the step of forming the copper layer includes electrodeless-Cu technology.
Claim 8
Dependent Claim
17 words
The method according to claim 1 , wherein the step of forming the copper layer includes electrodeless-plating.
Claim 9
Dependent Claim
27 words
The method according to claim 1 , wherein a material of the barrier layer is selected from a group comprising tantalum, tantalum nitride and other refractory metals.
Claim 10
Independent Claim
96 words
A method for fabricating a metal interconnect structure, comprising the steps of: providing a dielectric layer, wherein the dielectric layer has a trench therein; forming a conformal barrier layer on the dielectric layer; forming a metal layer on the barrier layer, wherein a part of the metal layer positioned in the trench has a thickness equal to a depth of the trench; forming a conformal cap layer on the metal layer; and removing a part of the metal layer, a part of the barrier, and a part of the cap layer that are outside the trench.
Claim 11
Independent Claim
96 words
A method for fabricating a metal interconnect structure, comprising the steps of: providing a dielectric layer, wherein the dielectric layer has a trench therein; forming a conformal barrier layer on the dielectric layer; forming a metal layer on the barrier layer, wherein a part of the metal layer positioned in the trench has a thickness equal to a depth of the trench; forming a conformal cap layer on the metal layer; and removing a part of the metal layer, a part of the barrier, and a part of the cap layer that are outside the trench.
Claim 12
Dependent Claim
18 words
The method according to claim 9 , wherein the cap layer has a thickness of about 300-1000 Å.
Claim 13
Dependent Claim
28 words
The method according to claim 9 , wherein a material of the cap layer is selected from a group consisting of silicon oxide, silicon nitride and tantalum nitride.
Claim 14
Dependent Claim
20 words
The method according to claim 9 , wherein the metal layer comprises metals with an electrical resistance comparable to copper.
Claim 15
Dependent Claim
15 words
The method according to claim 9 , wherein the metal layer comprises a copper layer.
Claim 16
Dependent Claim
17 words
The method according to claim 13 , wherein the method of forming the copper layer includes electrode-plating.
Claim 17
Dependent Claim
19 words
The method according to claim 13 , wherein the method of forming the copper layer includes chemical vapor deposition.
Claim 18
Dependent Claim
18 words
The method according to claim 13 , wherein the method of forming the copper layer includes electrodeless-Cu technology.
Claim 19
Dependent Claim
17 words
The method according to claim 13 , wherein the method of forming the copper layer includes electrodeless-plating.
Claim 20
Dependent Claim
27 words
The method according to claim 9 , wherein a material of the barrier layer is selected from a group comprising tantalum, tantalum nitride and other refractory metals.
References Cited (Backward Citations)
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| 7.5 Years (Year 8) | 2008-01-02 | 2008-07-03 | 2009-01-02 | $3760.00 | Window Closed / Lapsed |
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