Patent US6475840B1 successfully refreshed from Google Patents.
US6475840B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method for manufacturing the same
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1997-04-01
•
Granted: 2002-11-05
•
Expires: 2017-04-01
Abstract
Abstract An insulated gate field effect transistor comprises a silicon channel region. The silicon is crystallized by heat annealing while a suitable metal element such as nickel helps the crystallization. The crystallization proceeds in the silicon film laterally from the portion where the nickel is directly introduced. The TFT is arranged in such a manner that the source-drain direction of the TFT is aligned with the direction of the crystal growth or intersects with the crystal growth direction at a desired direction.
Inventors
- 👤 Akiharu Miyanaga
- 👤 Hisashi Ohtani
- 👤 Satoshi Teramoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 12:43
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3806; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10D86/40; H10D86/60; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 62
Claim 1
Independent Claim
75 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing said semiconductor film with a crystallization promoting material; crystallizing said semiconductor film provided with said crystallization promoting material; forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step; heating said semiconductor film and said first film; and removing said first film after said heating step.
Claim 2
Independent Claim
75 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing said semiconductor film with a crystallization promoting material; crystallizing said semiconductor film provided with said crystallization promoting material; forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step; heating said semiconductor film and said first film; and removing said first film after said heating step.
Claim 3
Dependent Claim
33 words
A method according to claim 1 wherein said crystallization promoting material comprises a metal element selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Ag.
Claim 4
Dependent Claim
15 words
A method according to claim 1 wherein said first film comprises a silicon oxide film.
Claim 5
Dependent Claim
12 words
A method according to claim 1 wherein said gettering element comprises chlorine.
Claim 6
Dependent Claim
18 words
A method according to claim 1 wherein said heating step is conducted by irradiating light from a lamp.
Claim 7
Dependent Claim
13 words
A method according to claim 5 wherein said lamp comprises a halogen lamp.
Claim 8
Dependent Claim
16 words
A method according to claim 1 wherein said semiconductor device comprises a liquid crystal display device.
Claim 9
Independent Claim
99 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing said semiconductor film with a crystallization promoting material; crystallizing said semiconductor film provided with said crystallization promoting material; forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step; heating said semiconductor film and said first film; removing said first film after said heating step; etching said semiconductor film into a semiconductor layer; and forming a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween.
Claim 10
Independent Claim
99 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing said semiconductor film with a crystallization promoting material; crystallizing said semiconductor film provided with said crystallization promoting material; forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step; heating said semiconductor film and said first film; removing said first film after said heating step; etching said semiconductor film into a semiconductor layer; and forming a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween.
Claim 11
Dependent Claim
33 words
A method according to claim 8 wherein said crystallization promoting material comprises a metal element selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Ag.
Claim 12
Dependent Claim
15 words
A method according to claim 8 wherein said first film comprises a silicon oxide film.
Claim 13
Dependent Claim
12 words
A method according to claim 8 wherein said gettering element comprises chlorine.
Claim 14
Dependent Claim
18 words
A method according to claim 8 wherein said heating step is conducted by irradiatng light from a lamp.
Claim 15
Dependent Claim
13 words
A method according to claim 12 wherein said lamp comprises a halogen lamp.
Claim 16
Dependent Claim
16 words
A method according to claim 8 wherein said semiconductor device comprises a liquid crystal display device.
Claim 17
Independent Claim
81 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing said semiconductor film with a crystallization promoting material; crystallizing said semiconductor film provided with said crystallization promoting material; forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step; heating said semiconductor film and said first film by irradiating light from a lamp; and removing said first film after said heating step.
Claim 18
Independent Claim
81 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing said semiconductor film with a crystallization promoting material; crystallizing said semiconductor film provided with said crystallization promoting material; forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step; heating said semiconductor film and said first film by irradiating light from a lamp; and removing said first film after said heating step.
Claim 19
Dependent Claim
33 words
A method according to claim 15 wherein said crystallization promoting material comprises a metal element selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Ag.
Claim 20
Dependent Claim
15 words
A method according to claim 15 wherein said first film comprises a silicon oxide film.
Claim 21
Dependent Claim
12 words
A method according to claim 15 wherein said gettering element comprises chlorine.
Claim 22
Dependent Claim
13 words
A method according to claim 15 wherein said lamp is a halogen lamp.
Claim 23
Dependent Claim
16 words
A method according to claim 15 wherein said semiconductor device comprises a liquid crystal display device.
Claim 24
Independent Claim
105 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing said semiconductor film with a crystallization promoting material; crystallizing said semiconductor film provided with said crystallization promoting material; forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step; heating said semiconductor film and said first film by irradiating light from a lamp; removing said first film after said heating step; etching said semiconductor film into a semiconductor layer; and forming a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween.
Claim 25
Independent Claim
105 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing said semiconductor film with a crystallization promoting material; crystallizing said semiconductor film provided with said crystallization promoting material; forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step; heating said semiconductor film and said first film by irradiating light from a lamp; removing said first film after said heating step; etching said semiconductor film into a semiconductor layer; and forming a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween.
Claim 26
Dependent Claim
33 words
A method according to claim 21 wherein said crystallization promoting material comprises a metal element selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Ag.
Claim 27
Dependent Claim
15 words
A method according to claim 21 wherein said first film comprises a silicon oxide film.
Claim 28
Dependent Claim
12 words
A method according to claim 21 wherein said gettering element comprises chlorine.
Claim 29
Dependent Claim
13 words
A method according to claim 21 wherein said lamp is a halogen lamp.
Claim 30
Dependent Claim
16 words
A method according to claim 21 wherein said semiconductor device comprises a liquid crystal display device.
Claim 31
Independent Claim
98 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing a selected portion of said semiconductor film with a crystallization promoting material; crystallizing said semiconductor film provided with said crystallization promoting material, wherein a crystal grows from said selected portion to a region where said crystallization promoting material is not provided; forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step; heating said semiconductor film and said first film; and removing said first film after said heating step.
Claim 32
Independent Claim
98 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing a selected portion of said semiconductor film with a crystallization promoting material; crystallizing said semiconductor film provided with said crystallization promoting material, wherein a crystal grows from said selected portion to a region where said crystallization promoting material is not provided; forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step; heating said semiconductor film and said first film; and removing said first film after said heating step.
Claim 33
Dependent Claim
33 words
A method according to claim 27 wherein said crystallization promoting material comprises a metal element selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Ag.
Claim 34
Dependent Claim
15 words
A method according to claim 27 wherein said first film comprises a silicon oxide film.
Claim 35
Dependent Claim
12 words
A method according to claim 27 wherein said gettering element comprises chlorine.
Claim 36
Dependent Claim
22 words
A method according to claim 27 wherein said heating step is conducted by irradiating light from a lamp through said first film.
Claim 37
Dependent Claim
13 words
A method according to claim 31 wherein said lamp comprises a halogen lamp.
Claim 38
Dependent Claim
16 words
A method according to claim 27 wherein said semiconductor device comprises a liquid crystal display device.
Claim 39
Independent Claim
122 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing a selected portion of said semiconductor film with a crystallization promoting material; crystallizing said semiconductor film provided with said crystallization promoting material, wherein a crystal grows from said selected portion to a region where said crystallization promoting material is not provided; forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step; heating said semiconductor film and said first film; removing said first film after said heating step; etching said semiconductors film into a semiconductor layer; and forming a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween.
Claim 40
Independent Claim
122 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing a selected portion of said semiconductor film with a crystallization promoting material; crystallizing said semiconductor film provided with said crystallization promoting material, wherein a crystal grows from said selected portion to a region where said crystallization promoting material is not provided; forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step; heating said semiconductor film and said first film; removing said first film after said heating step; etching said semiconductors film into a semiconductor layer; and forming a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween.
Claim 41
Dependent Claim
33 words
A method according to claim 34 wherein said crystallization promoting material comprises a metal element selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Ag.
Claim 42
Dependent Claim
15 words
A method according to claim 34 wherein said first film comprises a silicon oxide film.
Claim 43
Dependent Claim
12 words
A method according to claim 34 wherein said gettering element comprises chlorine.
Claim 44
Dependent Claim
18 words
A method according to claim 34 wherein said heating step is conducted by irradiating light from a lamp.
Claim 45
Dependent Claim
13 words
A method according to claim 38 wherein said lamp comprises a halogen lamp.
Claim 46
Dependent Claim
16 words
A method according to claim 34 wherein said semiconductor device comprises a liquid crystal display device.
Claim 47
Independent Claim
83 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing said semiconductor film with a crystallization promoting material; crystallizing said semiconductor film provided with said crystallization promoting material; forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step; heating said semiconductor film and said first film; removing said first film after said heating step; and introducing an impurity element into said semiconductor film.
Claim 48
Independent Claim
83 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing said semiconductor film with a crystallization promoting material; crystallizing said semiconductor film provided with said crystallization promoting material; forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step; heating said semiconductor film and said first film; removing said first film after said heating step; and introducing an impurity element into said semiconductor film.
Claim 49
Dependent Claim
33 words
A method according to claim 41 herein said crystallization promoting material comprises a metal element selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Ag.
Claim 50
Dependent Claim
15 words
A method according to claim 41 wherein said first film comprises a silicon oxide film.
Claim 51
Dependent Claim
12 words
A method according to claim 41 wherein said gettering element comprises chlorine.
Claim 52
Dependent Claim
18 words
A method according to claim 41 wherein said heating step is conducted by irradiating light from a lamp.
Claim 53
Dependent Claim
13 words
A method according to claim 45 wherein said lamp comprises a halogen lamp.
Claim 54
Dependent Claim
16 words
A method according to claim 41 wherein said semiconductor device comprises a liquid crystal display device.
Claim 55
Independent Claim
117 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing said semiconductor film with a crystallization promoting material; crystallizing said semiconductor film provided with said crystallization promoting material; forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step; heating said semiconductor film and said first film; removing said first film after said heating step; etching said semiconductor film into a semiconductor layer; forming a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween; and introducing an impurity element into selected portions of said semiconductor layer using said gate electrode as a mask.
Claim 56
Independent Claim
117 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing said semiconductor film with a crystallization promoting material; crystallizing said semiconductor film provided with said crystallization promoting material; forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step; heating said semiconductor film and said first film; removing said first film after said heating step; etching said semiconductor film into a semiconductor layer; forming a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween; and introducing an impurity element into selected portions of said semiconductor layer using said gate electrode as a mask.
Claim 57
Dependent Claim
34 words
A method according to claim 48 , wherein said crystallization promoting material comprises a metal element selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Ag.
Claim 58
Dependent Claim
15 words
A method according to claim 48 wherein said first film comprises a silicon oxide film.
Claim 59
Dependent Claim
12 words
A method according to claim 48 wherein said gettering element comprises chlorine.
Claim 60
Dependent Claim
18 words
A method according to claim 48 herein said heating step is conducted by irradiating light from a lamp.
Claim 61
Dependent Claim
13 words
A method according to claim 52 wherein said lamp comprises a halogen lamp.
Claim 62
Dependent Claim
16 words
A method according to claim 48 wherein said semiconductor device comprises a liquid crystal display device.
References Cited (Backward Citations)
US3505572A
Cited
USRE28385E
Cited
USRE28386E
Cited
US4174217A
Cited
US4271422A
Cited
US4133698A
Cited
US4226898A
Cited
US4239554A
Cited
US4682206A
Cited
US4231809A
Cited
US4331709A
Cited
US4300989A
Cited
US4451838A
Cited
US4482395A
Cited
US4379020A
Cited
US5859443A
Cited
US5262350A
Cited
US4277884A
Cited
US4406709A
Cited
US4466179A
Cited
US4746628A
Cited
US4544418A
Cited
JPS6184074A
Cited
US5296405A
Cited
US5170244A
Cited
US4755481A
Cited
US5221423A
Cited
JPS63170971A
Cited
US4992846A
Cited
US5225355A
Cited
JPH01276616A
Cited
US5043224A
Cited
US5173446A
Cited
JPH02140915A
Cited
JPH02208635A
Cited
US5531182A
Cited
US5200630A
Cited
JPH02275641A
Cited
US5177578A
Cited
JPH03104210A
Cited
US5278093A
Cited
JPH03155124A
Cited
US5313075A
Cited
US5318919A
Cited
JPH0491425A
Cited
US5147826A
Cited
US5210050A
Cited
US5744818A
Cited
US5262654A
Cited
US5266816A
Cited
US5313076A
Cited
JP3104210B2
Cited
US5352291A
Cited
US5352291B1
Cited
US5308998A
Cited
JPH0567635A
Cited
US5254480A
Cited
US5298075A
Cited
US5300187A
Cited
US5403772A
Cited
US5275851A
Cited
US5569610A
Cited
US5426064A
Cited
US5501989A
Cited
US5481121A
Cited
JP3155124B2
Cited
US5529937A
Cited
US5705829A
Cited
US5789284A
Cited
US6071766A
Cited
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