Abstract 1. IN A PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE, COMPRISING THE STEPS OF: PROVIDING A SUBSTRATE OF A SEMICONDUCTOR MATERIAL AND FORMING A LAYER OF INSULATING MATERIAL ON A GIVEN SURFACE OF SAID SUBSTRATE, SAID DEVICE INCLUDING (IOCLUDING) AT LEAST ONE DELETERIOUS METAL INGREDIENT, THE IMPROVEMENT COMPRISING: SIMULATNEOUSLY WITH THE FORMING OF AT LEAST A PORTION OF THE INSULATING MATERIAL LAYER EXPOSING SAID LAYER TO AN ATMOSPHERE COMPRISING A HYDROGEN HALIDE; AND HEATING SAID SUBSTRATE TO A TEMPERATURE SUFFICIENT TO CONVERT (CONNECT) SAID METAL TO THE METAL HALIDE AND TO VOLATILIZE THE HALIDE AT THE EXPOSED SURFACE OF SAID INSULATING LAYER, THEREBY ESTABLISHING A GRADIENT FOR OUTDIFFUSION OF SAID METAL FROM SAID DEVICE TOWARD SAID EXPOSED SURFACE.
IN A PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE, COMPRISING THE STEPS OF: PROVIDING A SUBSTRATE OF A SEMICONDUCTOR MATERIAL AND FORMING A LAYER OF INSULATING MATERIAL ON A GIVEN SURFACE OF SAID SUBSTRATE, SAID DEVICE INCLUDING (IOCLUDING) AT LEAST ONE DELETERIOUS METAL INGREDIENT, THE IMPROVEMENT COMPRISING: SIMULATNEOUSLY WITH THE FORMING OF AT LEAST A PORTION OF THE INSULATING MATERIAL LAYER EXPOSING SAID LAYER TO AN ATMOSPHERE COMPRISING A HYDROGEN HALIDE; AND HEATING SAID SUBSTRATE TO A TEMPERATURE SUFFICIENT TO CONVERT (CONNECT) SAID METAL TO THE METAL HALIDE AND TO VOLATILIZE THE HALIDE AT THE EXPOSED SURFACE OF SAID INSULATING LAYER, THEREBY ESTABLISHING A GRADIENT FOR OUTDIFFUSION OF SAID METAL FROM SAID DEVICE TOWARD SAID EXPOSED SURFACE.
Claim 2
Dependent Claim
116 words
IN A PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE, COMPRISING THE STEPS OF: PROVIDING A SUBSTRATE OF A SEMICONDUCTOR MATERIAL AND FORMING A LAYER OF INSULATING MATERIAL ON A GIVEN SURFACE OF SAID SUBSTRATE, SAID DEVICE INCLUDING (IOCLUDING) AT LEAST ONE DELETERIOUS METAL INGREDIENT, THE IMPROVEMENT COMPRISING: SIMULATNEOUSLY WITH THE FORMING OF AT LEAST A PORTION OF THE INSULATING MATERIAL LAYER EXPOSING SAID LAYER TO AN ATMOSPHERE COMPRISING A HYDROGEN HALIDE; AND HEATING SAID SUBSTRATE TO A TEMPERATURE SUFFICIENT TO CONVERT (CONNECT) SAID METAL TO THE METAL HALIDE AND TO VOLATILIZE THE HALIDE AT THE EXPOSED SURFACE OF SAID INSULATING LAYER, THEREBY ESTABLISHING A GRADIENT FOR OUTDIFFUSION OF SAID METAL FROM SAID DEVICE TOWARD SAID EXPOSED SURFACE.